Thin film getter and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11524271-B2
Application number	US-201716642935-A
Country	US
Kind code	B2
Filing date	Aug 28, 2017
Priority date	Aug 28, 2017
Publication date	Dec 13, 2022
Grant date	Dec 13, 2022

Abstract

A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.

First claim

The invention claimed is:

1. A thin film getter comprising:
a substrate; and
an absorption layer on the substrate,
wherein the absorption layer comprises:
a getter material for absorbing target gas; and
an auxiliary material for providing a moving path of the target gas, and

wherein the getter material is divided into a plurality of getter regions by the auxiliary material.

2. The thin film getter of claim 1 , wherein the auxiliary material comprises a plurality of branches extending in the getter material and the getter material is divided into the plurality of getter regions by the plurality of branches.

3. The thin film getter of claim 1 , wherein
an absorption amount of the target gas is increased as a content of the getter material is increased in the absorption layer, and
a speed of absorbing the target gas is increased as a content of the auxiliary material is increased in the absorption layer.

4. The thin film getter of claim 1 , wherein the getter material and the auxiliary material are simultaneously provided in a same process.

5. The thin film getter of claim 1 , wherein the target gas comprises hydrogen gas.

6. The thin film getter of claim 1 , further comprising a protective layer disposed on the absorption layer and formed of a material different from the auxiliary material.

7. The thin film getter of claim 6 , wherein the protective layer has a melting point lower than a melting point of the auxiliary material.

8. A method for manufacturing a thin film getter, the method comprising:
preparing a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas; and
forming an absorption layer comprising the getter material and the auxiliary material on a substrate by:
forming a preliminary absorption layer by simultaneously providing the getter material and the auxiliary material on the substrate, and
forming the absorption layer by carrying out an activation process of heat-treating the preliminary absorption layer so that the auxiliary material has a plurality of branches extending in the getter material and the getter material is divided into a plurality of getter regions by the plurality of branches.

9. The method of claim 8 , further comprising forming a protective layer on the preliminary absorption layer, wherein the protective layer is heat-treated by the activation process of the preliminary absorption layer, so as to form a plurality of openings for exposing the absorption layer in the protective layer.

10. A method for manufacturing a thin film getter, the method comprising:
preparing a getter material for absorbing a target gas and an auxiliary material for providing a moving path of the target gas; and
forming an absorption layer comprising the getter material and the auxiliary material on a substrate by simultaneously providing the getter material and the auxiliary material onto the substrate, so that the auxiliary material comprises a plurality of branches extending in the getter material and the getter material is divided into a plurality of getter regions by the plurality of branches.

11. A method for manufacturing a thin film getter, the method comprising:
preparing a getter material for absorbing a target gas and an auxiliary material for providing a moving path of the target gas; and
forming an absorption layer comprising the getter material and the auxiliary material on a substrate by simultaneously providing the getter material and the auxiliary material on the substrate,
wherein the getter material and the auxiliary material are simultaneously provided onto the substrate through sputtering or vapor deposition methods.

Assignees

• Iucf Hyu Erica Campus

Inventors

• Choa Yongho
• Lim Hyoryoung
• Eom Nusia

Classifications

• H10W76/48

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• B81B7/0038

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title