Superconductor structure with normal metal connection to a resistor and method of making the same

Patent metadata

Field	Value
Publication number	US-11522118-B2
Application number	US-202016738790-A
Country	US
Kind code	B2
Filing date	Jan 9, 2020
Priority date	Jan 9, 2020
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.

First claim

What is claimed is:

1. A method of forming a superconductor structure, the method comprising:
forming a superconductor line in a first dielectric layer;
forming a second dielectric layer overlying the first dielectric layer, the second dielectric layer having at least one opening formed therein;
forming a resistor with an end coupled to an end of the superconductor line through the at least one opening and a connecting portion connecting to the end of the resistor;
forming a third dielectric layer overlying the second dielectric layer and the resistor, the connecting portion of the resistor residing in the third dielectric layer;
etching a tapered opening through the third dielectric layer to the resistor; and
performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.

2. The method of claim 1 , wherein the normal metal connector is coupled to a mid-portion of the resistor.

3. The method of claim 1 , wherein the superconductor line is a first superconductor line, and further comprising a second superconductor line disposed in the first dielectric layer spaced apart from the first superconductor line.

4. The method of claim 3 , wherein the resistor has a first resistor contact coupled to the first superconductor line and a second resistor contact coupled to the second superconductor line, and wherein the connecting portion connecting the first resistor contact to the second resistor contact.

5. The method of claim 4 , wherein the connecting portion extends past both the first resistor contact and the second resistor contact and provides a substantial portion of the resistance value of the resistor.

6. The method of claim 1 , further comprising forming a superconductor contact that is in contact with an end of the superconductor line opposite an end of the superconductor line that is coupled to the resistor.

7. The method of claim 6 , further comprising forming another superconductor line in contact with the superconductor contact to form a damascene superconductor connector, the another superconductor line having a surface that is planar with a top surface of third dielectric layer.

8. The method of claim 1 , wherein the normal metal connector is coupled to an end-portion of the resistor.

9. The method of claim 1 , wherein the resistor is formed from one of titanium tungsten (TiW), molybdenum or molybdenum nitride (Mo, MoN), or palladium gold (PdAu) and the superconductor line is formed from one of niobium, aluminum and tantalum.

10. The method of claim 1 , further comprising depositing a liner material to fill the tapered opening and extend over a portion of the third dielectric layer, and wherein the performing a contact material fill with a normal metal material comprises depositing a normal metal material over the liner material within the tapered opening and extending over the portion of the third dielectric layer, such that the liner material and the normal metal material collectively form the normal metal connector.

11. The method of claim 10 , wherein the liner material is formed of titanium and the normal metal is formed of gold.

12. A superconductor structure comprising:
a first dielectric layer overlying a substrate;
a superconductor line residing within the first dielectric layer;
a second dielectric layer overlying the first dielectric layer;
a third dielectric layer overlying the second dielectric layer;
a resistor with a resistor contact end extending through the second dielectric layer to an end of the superconductor line, and a connecting portion connecting to the resistor contact end and residing within the third dielectric layer;
a tapered opening through the third dielectric layer to the resistor; and
a normal metal connector that connects to the resistor through the tapered opening.

13. The superconductor structure of claim 12 , wherein the normal metal connector is coupled to a mid-portion of the resistor.

14. The superconductor structure of claim 12 , wherein the superconductor line is a first superconductor line, and further comprising a second superconductor line disposed within the first dielectric layer spaced apart from the first superconductor line.

15. The superconductor structure of claim 14 , wherein the resistor contact is a first resistor contact and further comprising a second resistor contact extends through the second dielectric layer and is coupled to the second superconductor line, and wherein the connecting portion connects the first resistor contact to the second resistor contact.

16. The superconductor structure of claim 15 , wherein the connecting portion extends past both the first resistor contact and the second resistor contact and provides a substantial portion of the resistance value of the resistor.

17. The superconductor structure of claim 16 , further comprising a damascene superconductor connector that includes another superconductor line in contact with a superconductor contact that connects to the superconductor line, the another superconductor line having a surface that is planar with a top surface of the third dielectric layer.

18. The superconductor structure of claim 12 , wherein the normal metal connector is coupled to an end-portion of the resistor.

19. The superconductor structure of claim 12 , wherein the resistor is formed from one of titanium tungsten (TiW), molybdenum or molybdenum nitride (Mo, MoN), or palladium gold (PdAu) and the superconductor line is formed from one of niobium, aluminum and tantalum.

20. The superconductor structure of claim 12 , further comprising a liner material that fills the tapered opening and extends over a portion of the third dielectric layer, and a normal metal material disposed over the liner material within the tapered opening and extending over the portion of the third dielectric layer, such that the liner material and the normal metal material collectively form the normal metal connector.

Assignees

• Kirby Christopher F
• Rennie Michael
• Odonnell Daniel J
• Graninger Aurelius L
• Pesetski Aaron A
• Northrop Grumman Systems Corp

Inventors

• Kirby Christopher F
• Rennie Michael
• O'Donnell Daniel J
• Graninger Aurelius L
• Pesetski Aaron A

Classifications

• H10W20/4432

  the principal metal being a noble metal, e.g. gold · CPC title

• H10W20/498

  Resistive arrangements or effects of, or between, wiring layers · CPC title

• H01L39/24 Primary

  Electricity · mapped topic

• H01L23/53242

  Electricity · mapped topic

• H01L23/5228

  Electricity · mapped topic