RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features
US-9741673-B2 · Aug 22, 2017 · US
US11520206B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11520206-B2 |
| Application number | US-201716087701-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2017 |
| Priority date | Mar 25, 2016 |
| Publication date | Dec 6, 2022 |
| Grant date | Dec 6, 2022 |
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An active metamaterial array of the present disclosure includes: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, and when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer.
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We claim: 1. An active metamaterial array, comprising: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, wherein when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer, wherein as the conductivity of the conductivity variable material layer is changed, all of the plurality of metamaterial structures are connected or disconnected, and, thus, a resonant frequency and a phase are changed. 2. The active metamaterial array of claim 1 , wherein the conductivity is greater than a predetermined reference level, the plurality of metamaterial structures is controlled as a single metamaterial molecular structure. 3. The active metamaterial array of claim 2 , wherein in the metamaterial molecular structure, the plurality of metamaterial structures is arranged horizontally, vertically, or in a matrix form and connected to each other. 4. The active metamaterial array of claim 1 , wherein the electrolyte material layer contains an electrolyte liquid, gel, or a solidified electrolyte. 5. The active metamaterial array of claim 1 , wherein the gate electrode is formed as multiple units, and the gate electrodes are formed on one end and the other end, respectively, of the substrate, and different voltages are applied to the respective gate electrodes. 6. The active metamaterial array of claim 5 , wherein the electrolyte material layer includes multiple first electrolyte material layers and second electrolyte material layers, the gate electrodes include a first gate electrode and the second gate electrode disposed on one end and the other end, respectively, of the substrate, and the first electrolyte material layers are connected to the first gate electrode and the second electrolyte material layers are connected to the second gate electrode. 7. The active metamaterial array of claim 6 , wherein the first and second electrolyte material layers are formed into multiple of user defined shapes and arranged alternately. 8. The active metamaterial array of claim 1 , wherein the conductivity variable material layer is formed on or under the metamaterial structures to selectively connect the metamaterial structures. 9. The active metamaterial array of claim 1 , Wherein the metamaterial structure is configured as any shape showing the resonance property for the input wave, particularly including a rectangular intermediate portion and both end portions formed on both sides of the intermediate portion, and the intermediate portion has a greater horizontal length than the both end portions and a smaller vertical length than the both end portions. 10. The active metamaterial array of claim 1 , wherein the conductivity variable material layer has a sufficient length to connect the plurality of metamaterial structures and is formed as multiple layers in one direction, and the multiple conductivity variable material layers are spaced apart from each other. 11. The active metamaterial array of claim 1 , wherein the electrolyte material layer is formed as one layer corresponding in size to all of the metamaterial structures or formed as multiple layers corresponding in length to each column or each row of the metamaterial structures arranged in a matrix form. 12. A method for manufacturing an active metamaterial array, comprising: forming a plurality of metamaterial structures on a substrate to be spaced apart from each other; forming a semiconductor or a conductivity variable material layer between each of the plurality of metamaterial structures so as to selectively connect the metamaterial structures; forming an electrolyte material layer on the metamaterial structures and the conductivity variable material layer; and forming a gate electrode to be disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, wherein when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer, wherein as the conductivity of the conductivity variable material layer is changed, all of the plurality of metamaterial structures are connected or disconnected, and, thus, a resonant frequency and a phase are changed.
due to change in inclination, e.g. by flexing, by spiral wrapping · CPC title
made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title
Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations · CPC title
using semiconductor devices · CPC title
Multiple capacitors, e.g. ganged · CPC title
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