RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features

Patent metadata

Field	Value
Publication number	US-9741673-B2
Application number	US-201213537933-A
Country	US
Kind code	B2
Filing date	Jun 29, 2012
Priority date	Jun 22, 2007
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.

First claim

What is claimed is:

1. A packaged RF transistor device, comprising:
an RF transistor die including a plurality of RF transistor cells, each of the plurality of RF transistor cells including a control terminal and an output terminal;
an RF input lead coupled to the plurality of RF transistor cells;
an RF output lead;
an output matching network coupled between the plurality of RF transistor cells and the RF output lead, the output matching network including a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to the output terminals of respective ones of the RF transistor cells with first wire bonds; and
a combiner that is coupled to the RF output lead,
wherein the output matching network further comprises second wire bonds between the upper capacitor plates of respective ones of the capacitors and the combiner, and
wherein the upper capacitor plates of respective ones of the capacitors are coupled between the first wire bonds and the second wire bonds.

2. The packaged RF transistor device of claim 1 , further comprising a package that houses the RF transistor die and the output matching network, with the RF input lead and the RF output lead extending from the package.

3. The packaged RF transistor device of claim 2 , further comprising a base, wherein the RF transistor die is mounted on the base between the RF input lead and the RF output lead, and wherein the plurality of capacitors is provided as a capacitor block on the base between the RF transistor die and the RF output lead.

4. The packaged RF transistor device of claim 3 , wherein the capacitor block comprises a common reference capacitor plate and a dielectric layer on the reference capacitor plate, wherein the upper capacitor plates are on the dielectric layer.

5. The packaged RF transistor device of claim 4 , wherein adjacent ones of the upper capacitor plates are coupled together by electrically conductive connectors.

6. The packaged RF transistor device of claim 5 , wherein the electrically conductive connectors comprise metal strips on the dielectric layer that contact adjacent ones of the upper capacitor plates.

7. The packaged RF transistor device of claim 6 , wherein the metal strips have widths that are smaller than widths needed to support a resonance mode in the dielectric layer.

8. The packaged RF transistor device of claim 6 , wherein the upper capacitor plates are arranged in a first direction, and wherein the metal strips have widths in a second direction that is transverse to the first direction that are at least five times smaller than a length of the capacitor block in the first direction.

9. The packaged RF transistor device of claim 1 , wherein adjacent ones of the upper capacitor plates are coupled together by electrically resistive conductors, and
wherein the conductors have resistivities greater than 1E-5 ohm-cm.

10. The packaged RF transistor device of claim 9 , wherein the conductors have resistivities greater than about 1E-4 ohm-cm.

11. The packaged RF transistor device of claim 1 , wherein the plurality of capacitors comprise a plurality of discrete devices including separate reference capacitor plates and separate dielectric layers.

12. The packaged RF transistor device of claim 1 , further comprising:
an input matching network coupled between the RF input lead and the plurality of RE transistor cells, the input matching network including a plurality of second capacitors having respective second upper capacitor plates, wherein the second upper capacitor plates of the second capacitors are coupled to input terminals of respective ones of the RF transistor cells.

13. The packaged RF transistor device of claim 12 , wherein the plurality of second capacitors is provided as a capacitor block including a common reference capacitor plate and a dielectric layer on the reference capacitor plate, wherein the second upper capacitor plates are on the dielectric layer.

14. A packaged RF transistor device, comprising:
an RF transistor die including a plurality of RF transistor cells, each of the plurality of RF transistor cells including a control terminal and an output terminal;
an RF input lead coupled to respective ones of the RF transistor cells;
an RF output lead;
an output matching network coupled between the RF transistor die and the RF output lead, the output matching network including a split capacitor including a reference capacitor plate, a dielectric layer on the reference capacitor plate, and a plurality of upper capacitor plates on the dielectric layer; and
a combiner that is coupled to the RF output lead,
wherein the upper capacitor plates of the split capacitor are coupled to the output terminals of respective ones of the RF transistor cells by first wire bonds, and
wherein the output matching network further comprises second wire bonds between the upper capacitor plates of respective ones of the capacitors and the combiner, and
wherein the upper capacitor plates of the split capacitor are coupled between the first wire bonds and the second wire bonds.

15. The packaged RF transistor device of claim 14 , further comprising a package that houses the RF transistor die and the input matching network, with the RF input lead and the RF output lead extending from the package.

16. The packaged RF transistor device of claim 14 , further comprising a base, wherein the RF transistor die is mounted on the base between the RF input lead and the RF output lead, and wherein the split capacitor is on the base between the RF transistor die and the RF output lead.

17. The packaged RF transistor device of claim 14 , wherein adjacent ones of the upper capacitor plates are coupled together by electrically resistive conductors, and
wherein the conductors have resistivities greater than about 1E-4 ohm-cm.

18. The packaged RF transistor device of claim 14 , wherein the plurality of capacitors comprise a plurality of discrete devices including separate reference capacitor plates and separate dielectric layers.

19. The packaged RF transistor device of claim 14 , further comprising:
an input matching network coupled between the RF input lead and the plurality of RF transistor cells, the input matching network including a plurality of second capacitors having respective second upper capacitor plates, wherein the second upper capacitor plates of the second capacitors are coupled to input terminals of respective ones of the RF transistor cells.

20. The packaged RF transistor device of claim 19 , wherein the plurality of second capacitors is provided as a capacitor block including a common reference capacitor plate and a dielectric layer on the reference capacitor plate, wherein the second upper capacitor plates are on the dielectric layer.

21. The packaged RF transistor device of claim 14 , wherein adjacent ones of the upper capacitor plates are coupled together by electrically conductive connectors.

22. The packaged RF transistor device of claim 21 , wherein the electrically conductive connectors comprise metal strips on the dielectric layer that contact adjacent ones of the upper capacitor plates.

23. The packaged RF transistor device of claim 22 , wherein the metal strips have widths that are smaller than widths needed to support a resonance mode in the dielectric layer.

24. The packaged RF transistor device of claim 22 , wherein the upper capacitor plates are arranged in a first

Assignees

• Andre Ulf Hakan
• Wood Simon Maurice
• Cree Inc

Inventors

• Andre Ulf Hakan
• Wood Simon Maurice

Classifications

• H10W90/759

  between a chip and a laterally-adjacent discrete passive device · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/601

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title

• H10W44/20 Primary

  at high-frequency [HF] or radio frequency [RF] · CPC title