Etching apparatus

Patent metadata

Field	Value
Publication number	US-11515193-B2
Application number	US-202016901228-A
Country	US
Kind code	B2
Filing date	Jun 15, 2020
Priority date	Oct 15, 2019
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

First claim

What is claimed is:

1. An etching apparatus, comprising:
a reaction chamber having an internal space;
an upper electrode in the reaction chamber;
a fixing chuck formed of a conductive material in the internal space of the reaction chamber and below the upper electrode;
an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed;
a focus ring surrounding the electrostatic chuck; and
a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring,
wherein the plurality of sealing members are formed of a porous material, each of the plurality of sealing members comprises a body portion and an outer surface surrounding the body portion, and only the body portion includes voids and the outer surface is smooth and free of voids,
wherein the fixing chuck comprises a first flow path through which the cooling gas is configured to flow, and the electrostatic chuck comprises a second flow path connected to the first flow path and configured to provide the cooling gas to the focus ring.

2. The etching apparatus of claim 1 , wherein each of the plurality of sealing members has a value of Shore A hardness of 15 to 50.

3. The etching apparatus of claim 1 , wherein the plurality of sealing members are inserted into a plurality of insertion grooves in the electrostatic chuck or the focus ring.

4. The etching apparatus of claim 3 , wherein each of the plurality of sealing members fills 90% or more of a corresponding one of the plurality of insertion grooves.

5. The etching apparatus of claim 3 , wherein the plurality of insertion grooves are spaced apart in a radial direction.

6. The etching apparatus of claim 3 , wherein the first flow path and the second flow path are configured to provide the cooling gas between the plurality of insertion grooves.

7. The etching apparatus of claim 1 , wherein each of the plurality of sealing members has a circular ring shape, and a cross-section thereof has a rectangular shape.

8. The etching apparatus of claim 1 , further comprising an installation member between the electrostatic chuck and the focus ring and comprising a plurality of insertion grooves into which the plurality of sealing members are inserted.

9. The etching apparatus of claim 8 , wherein the plurality of insertion grooves are spaced apart in a radial direction, and
the installation member comprises a third flow path connected to the second flow path and configured to provide the cooling gas between the plurality of insertion grooves.

10. The etching apparatus of claim 1 , further comprising a fixing ring surrounding the focus ring and configured to fix the focus ring.

11. The etching apparatus of claim 10 , further comprising an insulating ring configured to insulate the electrostatic chuck and the fixing ring.

12. An etching apparatus, comprising:
a reaction chamber having an internal space;
an upper electrode in the reaction chamber;
a fixing chuck formed of a conductive material in the internal space of the reaction chamber and below the upper electrode;
an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; and
a focus ring surrounding the electrostatic chuck,
wherein the electrostatic chuck comprises a stepped side surface, and a coating layer is on an outer surface of the electrostatic chuck,
the focus ring comprises a groove portion such that an inner side surface of the focus ring is stepped, the groove portion opposite the side surface of the electrostatic chuck, and
the etching apparatus further comprises a ring member in the groove portion.

13. The etching apparatus of claim 12 , wherein the coating layer and the ring member are formed of the same material.

14. The etching apparatus of claim 12 , wherein a portion of the side surface of the electrostatic chuck opposite an inner surface of the ring member and the inner surface of the ring member are spaced apart from one another.

15. The etching apparatus of claim 12 , wherein the electrostatic chuck is formed of a conductive material.

16. An etching apparatus, comprising:
a reaction chamber having an internal space;
an upper electrode in the reaction chamber;
a fixing chuck formed of a conductive material in the internal space of the reaction chamber and below the upper electrode;
an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed;
a focus ring surrounding the electrostatic chuck, and comprising a groove portion in a lower portion of an inner side surface thereof and an insertion groove on a bottom surface thereof;
a ring member fixedly installed in the groove portion of the focus ring; and
a sealing member received in the insertion groove,
wherein the sealing member is formed of a porous material and comprises a body portion and an outer surface surrounding the body portion, and only the body portion includes voids and the outer surface is smooth and free of voids.

17. The etching apparatus of claim 16 , wherein the sealing member has a value of Shore A hardness of 15 to 50.

18. The etching apparatus of claim 16 , wherein the sealing member fills 90% or more of a volume of the insertion groove.

19. The etching apparatus of claim 16 , wherein the insertion groove comprises a plurality of insertion grooves that are spaced apart in a radial direction.

20. The etching apparatus of claim 16 , wherein a side surface of the electrostatic chuck is stepped, a coating layer is on an outer surface of the electrostatic chuck, and the ring member is opposite the side surface of the electrostatic chuck.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Kuihyun
• Lee Jaehak
• Kim Yunhwan
• Lee Jongkeun
• KIM Kyohyeok
• Han Jewoo

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0418

  for etching · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/72

  using electrostatic chucks · CPC title