Plasma etching apparatus

Patent metadata

Field	Value
Publication number	US-10153138-B2
Application number	US-201314019023-A
Country	US
Kind code	B2
Filing date	Sep 5, 2013
Priority date	Sep 7, 2012
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

First claim

What is claimed is:

1. A plasma etching apparatus, comprising:
a base of a first metal that has a lower expansion coefficient than aluminum;
an electrostatic chuck disposed over the base and configured to mount an object to be processed;
a bonding layer between the base and the electrostatic chuck, the bonding layer bonding the base and the electrostatic chuck; and
a heater provided within the electrostatic chuck,
wherein the base includes:
(i) a cylindrical recess,
(ii) a metal portion of a second metal embedded beneath the cylindrical recess, wherein the second metal has a higher thermal conductivity than the first metal, and

wherein the metal portion is surrounded by the first metal,
wherein the base includes a through hole at a center thereof, a surface of the through hole is covered by an elastic member with an insulating layer interposed between the elastic member and the base, the elastic member is in direct contact with the electrostatic chuck, and the metal portion of the second metal extends substantially beyond an outer periphery of the electrostatic chuck.

2. The plasma etching apparatus of claim 1 , wherein the bonding layer includes a brazing metal.

3. The plasma etching apparatus of claim 1 , wherein the metal portion is at a position within the base below the electrostatic chuck.

4. The plasma etching apparatus of claim 1 , further comprising a focus ring,
wherein the metal portion is at a position within the base below the focus ring.

5. The plasma etching apparatus of claim 1 , wherein the base is provided with an outlet port of a terminal that is connected to an electrode plate or the heater provided within the electrostatic chuck, and the outlet port is provided with a ceramic layer and a wiring having a metal portion.

6. The plasma etching apparatus of claim 1 , wherein the first metal includes at least one of titanium, kovar, invar, usper invar, and nobinite.

7. The plasma etching apparatus of claim 1 , wherein the second metal includes at least one of silver, copper and aluminum.

8. The plasma etching apparatus of claim 1 , wherein the electrostatic chuck includes a ceramic, and is provided with a metal film at a portion to which the bonding layer is bonded.

9. The plasma etching apparatus of claim 1 , wherein the metal portion is divided in plural portions.

10. The plasma etching apparatus of claim 1 , wherein the metal portion is provided in a larger amount at a position corresponding to an edge of the electrostatic chuck than a position corresponding to a center of the electrostatic chuck, and wherein the metal portion is at a position within the base below the electrostatic chuck.

11. The plasma etching apparatus of claim 1 , wherein the metal portion is provided only at a position corresponding to an edge of the electrostatic chuck, and wherein the metal portion is at a position below the electrostatic chuck.

12. The plasma etching apparatus of claim 1 , wherein the base comprises a peripheral convex portion surrounding the cylindrical recess.

13. The plasma etching apparatus of claim 12 , further comprising:
a sealant which contacts at least two of a side surface of the electrostatic chuck, a side surface of the peripheral convex portion and an upper surface of the base.

14. The plasma etching apparatus of claim 13 , further comprising:
a focus ring,
wherein the sealant is located beneath the focus ring.

15. The plasma etching apparatus of claim 13 , further comprising:
a sprayed film which covers the upper surface of the base and the side surface of the peripheral convex portion such that the sealant contacts at least one of the side surface of the peripheral convex portion and the upper surface of the base with the sprayed film interposed therebetween.

16. The plasma etching apparatus of claim 12 , further comprising:
another metal portion embedded in the peripheral convex portion.

17. The plasma etching apparatus of claim 16 , wherein the another metal portion has a triangular cross section.

Assignees

• Tokyo Electron Ltd

Inventors

• Aoto Tadashi
• Hayashi Daisuke

Classifications

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J37/32807

  Construction (includes replacing parts of the apparatus) · CPC title