Composition for etching and manufacturing method of semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11512226-B2
Application number	US-202017090901-A
Country	US
Kind code	B2
Filing date	Nov 6, 2020
Priority date	Dec 26, 2016
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

First claim

The invention claimed is:

1. A method for forming a cell gate structure, the method comprising:
forming a cell gate structure on a substrate by alternatively stacking a plurality of interlayer insulating layers and a plurality of gate electrode layers;
forming a plurality of holes through the cell gate structure; and
selectively etching a plurality of nitride layers in the cell gate structure by a composition;
wherein the composition for the selective etching comprises:
a first inorganic acid;
a first additive represented by Chemical Formula 1;
a second additive comprising a silane inorganic acid salt produced by reaction between a second inorganic acid and a silane compound;
a solvent;
wherein the second inorganic acid is at least one selected from the group consisting of a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof; and
the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination;
the silane inorganic acid salt is represented by Chemical Formula C200-1;

(In Chemical Formula 1: X is O or N, R 1 to R 6 are each independently selected from the group consisting of hydrogen, C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, a C 2 -C 20 alkenyl group, a C 3 -C 20 cycloalkyl group, a C 1 -C 20 aminoalkyl group, a C 6 -C 20 aryl group, a C 1 -C 20 alkyl carbonyl group, a C 1 -C 20 alkyl carbonyloxy group, and a C 1 -C 20 cyano alkyl group, and n 11 is 0 or 1);

(In Chemical Formula 10 and Chemical Formula 20: each R 1 to R 10 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R 1 to R 4 is hydrogen atom, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10);

(In Chemical Formula C200-1: each R 111 to R 112 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; each R 113 to R 122 is independently hydrogen; each o 1 , o 21 , o 22 , o 3 is independently one of integer numbers from 0 to 10; n 4 is one of integer numbers from 0 to 2; l 1 is one of integer numbers from 0 to 10; m 1 is 0 or 1).

2. The method of claim 1 , wherein any one of hydrogen of R 113 to R 122 in the Chemical Formula C200-1 is substituted by Chemical Formula C200-1;

(In Chemical Formula C200-1: each R 131 to R 132 is a coupler coupling to Chemical Formula C200-1, the other is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; each R 115 to R 122 is independently hydrogen or substituted by a substituent represented by Chemical Formula C200-1; each o 1 , o 22 , o 3 is independently one of integer numbers from 0 to 10; n 4 is one of integer numbers from 0 to 2; l 1 is one of integer numbers from 0 to 10; m 1 is 0 or 1).

3. The method of claim 1 , wherein the silane inorganic acid salt represented by Chemical Formula C200-1 is any one selected from a group consisting of Chemical Formulas 52, 53, 55, 56, 57, 103, 106, 107, 108, 205, 207, 208, 209, 210, and their combination;

(In Chemical Formula 52, 53, 55, 56, 57, 103, 106, 107, 108, 205, 207, 208, 209, 210: each R 1 , R 3 , R 1-1 , R 1-2 , R 1-3 , R 1-4 , R 1-5 , R 1-6 , R 1-7 , R 1-8 , R 2-1 , R 2-2 , R 3-1 , R 3-2 , R 3-3 , is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms).

4. The method of claim 1 , wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 15% by weight, and the solvent as the balance.

Assignees

• Soulbrain Co Ltd

Inventors

• Park Jae-Wan
• Lim Jung-Hun
• Lee Jin-Uk

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title