Package structure having taper-shaped conductive pillar and method of forming thereof

Patent metadata

Field	Value
Publication number	US-11508633-B2
Application number	US-202016886755-A
Country	US
Kind code	B2
Filing date	May 28, 2020
Priority date	May 28, 2020
Publication date	Nov 22, 2022
Grant date	Nov 22, 2022

Abstract

A conductive structure, includes: a plurality of conductive layers; a plurality of conductive pillars being formed on the plurality of conductive layers, respectively; and a molding compound laterally coating the plurality of conductive pillars. Each of the plurality of conductive pillars is a taper-shaped conductive pillar, and is tapered from the conductive layers.

First claim

What is claimed is:

1. A package structure, comprising:
at least one die comprising a plurality of die connectors;
a plurality of taper-shaped through vias, wherein each of the plurality of taper-shaped through vias comprises a conductive layer and a taper-shaped conductive pillar on the conductive layer;
an encapsulant laterally encapsulating the at least one die and the plurality of taper-shaped through vias; and
a redistribution structure, disposed over the encapsulant and electrically connected with the at least one die and the plurality of taper-shaped through vias, wherein the redistribution structure is in direct contact with the plurality of die connectors, a width of the taper-shaped conductive pillar gradually decreases along a direction from the conductive layer toward the redistribution structure, each of the plurality of die connectors is a taper-shaped die connector, and a width of each of the plurality of die connectors gradually decreases along the direction.

2. The package structure of claim 1 , wherein the conductive layer is a seed layer.

3. The package structure of claim 1 , wherein top surfaces of the taper-shaped through vias and the encapsulant are substantially coplanar.

4. The package structure of claim 1 , wherein a ratio of a height of the taper-shaped through vias to a width of a top side of the taper-shaped through vias is larger than or equal to 5.

5. The package structure of claim 1 , wherein a ratio of a width of a bottom side of the taper-shaped through vias to a width of a top side of the taper-shaped through vias is larger than 1 and is smaller or equal to 3.

6. The package structure of claim 1 , wherein each of the taper-shaped through vias further comprises:
a first angle between a top side of the taper-shaped through vias and a first lateral side of the taper-shaped through vias; and
a second angle between the top side of the taper-shaped through vias and a second lateral side of the taper-shaped through vias,
wherein the first angle and the second angle are both larger than 90 degrees and smaller than 135 degrees.

7. The package structure of claim 1 , wherein a distance between opposing top sides, of the adjacent taper-shaped through vias is larger than or equal to a width of a top side of the taper-shaped through vias.

8. The package structure of claim 1 , wherein a distance between opposing bottom sides of the adjacent taper-shaped through vias is smaller than or equal to 15 μm.

9. The package structure of claim 1 , wherein a ratio of a height of the taper-shaped through vias to a distance between opposing top sides of the adjacent taper-shaped through vias is larger than or equal to 1.33.

10. An package structure, comprising:
at least one die, wherein the at least one die comprises:
a substrate;
a plurality of pads over the substrate;
a passivation layer on portions of each of the plurality of pads;
a plurality of die connectors on the plurality of pads, respectively; and
a dielectric layer laterally encapsulating the plurality of die connectors;

a plurality of seed layers and a plurality of taper-shaped conductive pillars on the plurality of seed layers, respectively, wherein each of the plurality of taper-shaped conductive pillars is tapered from the plurality of seed layers;
an encapsulant laterally encapsulating the at least one die, the plurality of seed layers and the plurality of taper-shaped conductive pillars; and
a redistribution structure, disposed over the encapsulant and electrically connected with the plurality of die connectors of the at least one die and the plurality of taper-shaped conductive pillars, wherein the redistribution structure is in direct contact with the plurality of die connectors, each of the plurality of die connectors is a taper-shaped die connector, and a width of each of the plurality of die connectors gradually decreases from the pads toward the redistribution structure.

11. The package structure of claim 10 , wherein a ratio of a height of the taper-shaped die connector to a width of a top side of the taper-shaped die connector is larger than or equal to 2.

12. The package structure of claim 10 , wherein a ratio of a width of a bottom side of the taper-shaped die connector to a width of a top side of the taper-shaped die connector is larger than 1 and is smaller or equal to 3.

13. The package structure of claim 10 , wherein the taper-shaped die connector further comprises:
a first angle between a top side of the taper-shaped die connector and a first lateral side of the taper-shaped die connector; and
a second angle between the top side of the taper-shaped die connector and a second lateral side of the taper-shaped die connector,
wherein the first angle and the second angle are both larger than 90 degrees and smaller than 135 degrees.

14. The package structure of claim 13 , wherein the first angle is the same as the second angle.

15. The package structure of claim 10 , wherein a distance between centers of the adjacent taper-shaped die connectors is smaller than or equal to 50 μm.

16. The package structure of claim 10 , wherein a distance between opposing bottom sides of the adjacent taper-shaped die connectors is smaller than or equal to 15 μm.

17. The package structure of claim 10 , wherein a width of a top side of the taper-shaped die connector is smaller than or equal to 15 μm.

18. The package structure of claim 10 , wherein a ratio of a height of the taper-shaped die connector to a distance between opposing top sides of the adjacent taper-shaped die connectors is larger than or equal to 2.

19. A package structure, comprising:
at least one die comprising a plurality of pads and a plurality of die connectors on the plurality of pads along a first direction, espectively;
a plurality of through vias;
an encapsulant laterally encapsulating the at least one die and the plurality of through vias; and
a redistribution structure, disposed over the encapsulant, the at least one die and the plurality of through vias along the first direction, wherein the redistribution structure is in direct contact with the plurality of die connectors, each of the plurality of die connectors is a taper-shaped die connector, and a dimension of each of the plurality of die connectors along a second direction perpendicular to the first direction gradually decreases along the first direction from the pads toward the redistribution structure.

20. The package structure of claim 19 , wherein a distance between centers of the adjacent taper-shaped die connectors is smaller than or equal to 50 μm.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kuo Hung-Jui
• Tsai Hui-Jung
• Chang Tai-Min
• Wang Chia-Wei

Classifications

• H10W72/874

  On different surfaces · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W70/09

  extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title