Conductive contacts having varying widths and method of manufacturing same

Patent metadata

Field	Value
Publication number	US-9105530-B2
Application number	US-201313904885-A
Country	US
Kind code	B2
Filing date	May 29, 2013
Priority date	Sep 18, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar width, and the UBM width is greater than the pillar width.

First claim

What is claimed is:

1. A bump structure, comprising:
a contact element formed over a substrate;
a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element;
a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element;
an under bump metallurgy (UBM) feature electrically coupled to the contact element, the under bump metallurgy feature having a UB…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Lin Yen-Liang
• Tseng Yu-Jen
• Huang Chang-Chia
• Kuo Tin-Hao
• Chen Chen-Shien

Classifications

• H10W74/00

  Electricity · mapped topic

• H10W72/952

  Electricity · mapped topic

• H10W72/923

  Electricity · mapped topic

• H10W72/29

  Electricity · mapped topic

• H10W72/012

  Electricity · mapped topic