Surface treatment compositions and methods

Patent metadata

Field	Value
Publication number	US-11508569-B2
Application number	US-202016983119-A
Country	US
Kind code	B2
Filing date	Aug 3, 2020
Priority date	Aug 21, 2019
Publication date	Nov 22, 2022
Grant date	Nov 22, 2022

Abstract

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.

First claim

What is claimed is:

1. A method of treating a substrate, comprising:
a) providing a sublimating material comprising a sublimating compound in an amount of from about 40% by weight to about 99.5% by weight of the sublimating material and a surface modification agent in an amount of from about 0.5% by weight to about 10% by weight of the sublimating material;
b) supplying the sublimating material to a substrate having a pattern disposed on a surface thereof;
c) maintaining the sublimating material on the surface for a time sufficient to modify the surface;
d) solidifying the sublimating material on the surface; and
e) removing by sublimation the sublimating material disposed on the surface;
wherein the sublimating compound is selected from the group consisting of glacial acetic acid, octamethylcyclotetrasiloxane, pentafluorophenol, 2-acetyl-5-methyl furan, p-chlorotoluene, acrylic acid, pyrimidine, 4-methyl thiazole, p-xylene, ethylene dibromide, paraldehyde, ethylenediamine, 1,4-dioxane, formic acid, hexafluorobenzene, benzene, cyclohexane, 4-pyridinol, camphene, 2,2-dimethyl-1-propanol, cyanamide, dimethyl carbonate, trimethylsilanol, dimethyl sulfoxide, cyclohexanol, and trimethylacetonitrile.

2. The method of claim 1 , wherein the sublimating compound has a melting point of from about −20° C. to about 60° C. and a vapor pressure of at least about 1 mm Hg at 25° C.

3. The method of claim 1 , wherein the sublimating compound has a melting point of from about 0° C. to about 20° C.

4. The method of claim 1 , wherein the sublimating compound has a surface tension of at most about 65 mN/m at 25° C.

5. The method of claim 1 , wherein the sublimating compound has a viscosity of at most about 5 centistokes at 25° C.

6. The method of claim 1 , wherein the sublimating compound is selected from the group consisting of glacial acetic acid, octamethylcyclotetrasiloxane, pentafluorophenol, 2-acetyl-5-methyl furan, p-chlorotoluene, acrylic acid, pyrimidine, 4-methyl thiazole, p-xylene, ethylene dibromide, paraldehyde, ethylenediamine, 1,4-dioxane, hexafluorobenzene, benzene, cyclohexane, 4-pyridinol, camphene, 2,2-dimethyl-1-propanol, cyanamide, dimethyl carbonate, trimethylsilanol, cyclohexanol, and trimethylacetonitrile.

7. The method of claim 1 , wherein the sublimating compound is in an amount of from about 50% by weight to about 99.5% by weight of the sublimating material.

8. The method of claim 1 , wherein the surface modification agent is in an amount of from about 0.5% by weight to about 9% by weight of the sublimating material.

9. The method of claim 1 , wherein the surface comprises SiO 2 , SiN, TiN, SiOC, SiON, Si, SiGe, Ge, or W.

10. The method of claim 1 , wherein the sublimating material further comprises a catalyst.

11. The method of claim 10 , wherein the catalyst is triflic acid, triflic anhydride, methanesulfonic acid, acetic acid, or acetic anhydride.

12. The method of claim 10 , wherein the catalyst is in an amount of from about 0.1% by weight to about 10% by weight of the sublimating material.

13. The method of claim 1 , wherein the sublimating material further comprises a solvent.

14. The method of claim 13 , further comprising a solvent evaporation step.

15. The method of claim 13 , wherein the solvent is hexyl acetate, n-butyl acetate, t-butyl acetate, propylene glycol methyl ether acetate (PGMEA), or anisole.

16. The method of claim 1 , wherein the surface modification agent comprises a Si-containing compound.

17. The method of claim 16 , wherein the Si-containing compound is a disilazane.

18. The method of claim 17 , wherein the disilazane is hexamethyldisilazane, heptamethyldisilazane, N-methyl hexamethyldisilazane, 1,3-diphenyltetramethyldisilazane, or 1,1,3,3-tetraphenyl-1,3-dimethyldisilazane.

19. The method of claim 16 , wherein the Si-containing compound comprises a trimethylsilyl group.

20. The method of claim 19 , wherein the Si-containing compound is trimethylsilyltriflate, N-(trimethylsilyl)dimethylamine, N-(trimethylsilyl)diethylamine, 4-trimethylsilyloxy-3-penten-2-one, bis(trimethylsilyl)sulfate, methoxytrimethylsilane, ethoxytrimethylsilane, N-allyl-N,N-bis(trimethylsilyl)amine, N-(trimethylsilyl)diethylamine, N,N-bis-trimethylsilyl urea, trimethylsilanol, N-(trimethylsilyl)acetamide, or tris(trimethylsilyl)phosphate.

21. The method of claim 16 , wherein the Si-containing compound is an aminosilane.

22. The method of claim 21 , wherein the aminosilane is triisopropyl(dimethylamino)silane.

23. The method of claim 16 , wherein the Si-containing compound is a siloxane.

24. The method of claim 23 , wherein the siloxane is octamethylcyclotetrasiloxane or 1,3-bis(heptadecafluoro-1,2,2-tetrahydrodecyl)tetramethyldisiloxane.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Wojtczak William A
• Takahashi Kazutaka
• Mizutani Atsushi
• Dory Thomas
• Park Keeyoung

Classifications

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• B08B7/0014

  by incorporation in a layer which is removed with the contaminants · CPC title

• H01L21/02057 Primary

  Electricity · mapped topic