Method of manufacturing semiconductor device and chemical liquid

Patent metadata

Field	Value
Publication number	US-10192733-B2
Application number	US-201715440896-A
Country	US
Kind code	B2
Filing date	Feb 23, 2017
Priority date	Nov 29, 2013
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:
attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein;
substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a precipitating material dissolved in a second liquid;
vaporizing the second liquid and precipitating the precipitating material to the surface of the semiconductor substrate; and
removing the precipitating material by transforming the precipitating material from solid to gas by depressurization and/or heating,
the precipitating material comprising at least one material selected from a group consisting of:
materials represented by chemical formulae A1, A2, A3, and A4 indicated in FIG. 5A , FIG. 5B , FIG. 5C , and FIG. 5D where X 1 , X 2 , and X 3 in the chemical formulae A1, A2, A3, and A4 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), and a methylester group (—COO—CH 3 ), and
materials represented by chemical formulae B1, B2, B3, B4, and B5 indicated in FIG. 6A , FIG. 6B , FIG. 6C , FIG. 6D , and FIG. 6E where X 1 , X 2 , X 3 , and X 4 in the chemical formulae B 1 , B2, B3, B4 and B5 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), a methylester group (—COO—CH 3 ), a methoxy group (—OCH 3 ), an ethoxy group (—OCH 2 CH 3 ), and a propoxy group (—OCH 2 CH 2 CH 3 ),
in the materials represented by chemical formulae A1, A4, B1, B3, and B5, a group bonded to one of adjacent bonding sites is a carboxyl group and one or more groups bonded to the other of the adjacent bonding sites include a carboxyl group, a hydroxyl group, or an amino group.

2. A method of manufacturing a semiconductor device comprising:
attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein;
substituting the first liquid attached to the surface of the semiconductor substrate with a third liquid;
substituting the third liquid with a solution, the solution comprising a precipitating material dissolved in a second liquid;
vaporizing the second liquid and precipitating the precipitating material to the surface of the semiconductor substrate; and
removing the precipitating material by transforming the precipitating material from solid to gas by depressurization and/or heating,
the third liquid having affinity for the first liquid and for the second liquid,
the precipitating material comprising at least one material selected from a group consisting of:
materials represented by chemical formulae A1, A2, A3, and A4 indicated in FIG. 5A , FIG. 5B , FIG. 5C , and FIG. 5D where X 1 , X 2 , and X 3 in the chemical formulae A1, A2, A3, and A4 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), and a methylester group (—COO—CH 3 ), and
materials represented by chemical formulae B1, B2, B3, B4, and B5 indicated in FIG. 6A , FIG. 6B , FIG. 6C , FIG. 6D , and FIG. 6E where X 1 , X 2 , X 3 , and X 4 in the chemical formulae B1, B2, B3, B4 and B5 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), a methylester group (—COO—CH 3 ), a methoxy group (—OCH 3 ), an ethoxy group (—OCH 2 CH 3 ), and a propoxy group (—OCH 2 CH 2 CH 3 ),
in the materials represented by chemical formulae A1, A4, B1, B3, and B5, a group bonded to one of adjacent bonding sites is a carboxyl group and one or more groups bonded to the other of the adjacent bonding sites include a carboxyl group, a hydroxyl group, or an amino group.

3. The method according to claim 1 , wherein the precipitating material comprises a material having at least two carboxyl groups bonded to cyclohexane.

4. The method according to claim 2 , wherein the precipitating material comprises a material having at least two carboxyl groups bonded to cyclohexane.

5. The method according to claim 1 , wherein the precipitating material comprises two carboxyl groups bonded to benzene, bonding sites of the two carboxyl groups being adjacent to one another.

6. The method according to claim 2 , wherein the precipitating material comprises two carboxyl groups bonded to benzene, bonding sites of the two carboxyl groups being adjacent to one another.

7. The method according to claim 1 , wherein the chemical formula A1 represents cyclohexane-1, 2-dicarboxylic acid, the chemical formula A4 represents cyclohexane-1, 2, 4-tri carboxylic acid, the chemical formula B1 represents phthalic acid and the chemical formula B3 represents a material including either of barinin, 4-hydroxyphthalic acid, trimellitic acid, and trimellitic anhydride.

8. The method according to claim 2 , wherein the chemical formula A1 represents cyclohexane-1, 2-dicarboxylic acid, the chemical formula A4 represents cyclohexane-1, 2, 4-tricarboxylic acid, the chemical formula B1 represents phthalic acid and the chemical formula B3 represents a material including either of barinin, 4-hydroxyphthalic acid, trimellitic acid, and trimellitic anhydride.

9. The method according to claim 1 , wherein the first liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.

10. The method according to claim 2 , wherein the first liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.

11. The method according to claim 1 , wherein the second liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.

12. The method according to claim 2 , wherein the second liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.

13. The method according to claim 1 , wherein the second liquid comprises at least one material selected from a group consisting of water, methanol, ethanol, IPA (isopropyl alcohol), butanol, propanol, ethylene glycol, propylene glycol, NMP (N-methyl-2-pyrrolidone), DMF (N, N-dimethyformamide), DMA (N, N-dimethylacetamide) and DMSO (dimethylsulfoxide), hexane, toluene, propyleneglycol monomethylether acetate (PGMEA), propyleneglycol monomethylether (PGME), propyleneglycol monopropylether (PGPE), propyleneglycol monoethylether (PGEE), gamma butyrolactone (GBL), acetylacetone, 3-pentanone, 2-pentanone, ethyl lactate, cyclohexanone, dibutylether, hydrofluoroether (HFE), ethyl nonafluoroisobutyl ether, ethyl nonafluorobutyl ether, m-xylenehexafluoride, cyclohexane, formic acid, acetic acid, pyridine, diethylamine, dimethylamine, ethylenediamine, triethylamine, dimethylacetamide, diethylacetamide, and formamide.

14. The method according to claim 2 , wherein the second liquid comprises at least one material selected from a group consisting of water, methanol, ethanol, IPA (isopropyl alcohol), butanol, propanol, ethylene glycol, propylene glycol, NMP (N-methyl-2-pyrrolidone), DMF (N, N-d

Assignees

• Toshiba Memory Corp

Inventors

• Igarashi Junichi
• Sato Katsuhiro
• Hirakawa Masaaki

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title