Substrate supporting unit and a substrate processing device including the same

Patent metadata

Field	Value
Publication number	US-11499226-B2
Application number	US-201916671847-A
Country	US
Kind code	B2
Filing date	Nov 1, 2019
Priority date	Nov 2, 2018
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

First claim

What is claimed is:

1. A substrate processing device comprising: a gas supply unit; and a substrate supporting unit below the gas supply unit, wherein the substrate supporting unit comprises: a base; a first protrusion adjacent to a periphery of the base and protruding to a first height; and a second protrusion adjacent to a center of the base and protruding to a second height less than the first height, wherein an upper surface of the first protrusion comprises a contact surface that comes into contact with an edge of a substrate to be processed, and wherein the second protrusion has an upper surface lower than the contact surface of the first protrusion, wherein the substrate supporting unit is configured to: support the substrate to be processed through the contact surface of the first protrusion during a first operation of the substrate processing device, and support the substrate to be processed through both of the contact surface of the first protrusion and the upper surface of the second protrusion during a second operation of the substrate processing device, wherein active species are formed when an electric power is supplied between the gas supply unit and the substrate supporting unit, and wherein the second protrusion is configured to relocate the active species adjacent to the second protrusion such that the active species are arranged around a center of the substrate to be processed, wherein the substrate processing device further comprises a suction force generator generating a suction force such that a backside of the substrate to be processed faces the base, wherein, when the substrate to be processed is deformed due to the suction force, the deformed substrate is in line contact with the first protrusion and at the same time in contact with the second protrusion so that the line contact of the substrate by the first protrusion is maintained to prevent flow of reactive gas into the backside of the substrate to be processed and the second protrusion supports the substrate to be processed during the deformation.

2. The substrate processing device of claim 1 , wherein the second protrusion comprises a conductive material.

3. The substrate processing device of claim 2 , wherein the second protrusion is electrically connected to ground.

4. The substrate processing device of claim 2 , wherein the second protrusion is electrically connected to a radio frequency (RF) power supply.

5. The substrate processing device of claim 1 , further comprising:
a heater block below the substrate supporting unit,
wherein a positioning hole is formed in the center of the base, and
a position fixing pin is inserted into the positioning hole and a position of the base with respect to the heater block is fixed.

6. The substrate processing device of claim 5 , wherein a plurality of second protrusions are symmetrically distributed with respect to the positioning hole.

7. The substrate processing device of claim 1 , wherein at least a part of the upper surface of the second protrusion is rounded.

8. The substrate processing device of claim 1 , wherein the substrate to be processed is deformed due to a temperature change of the substrate processing device, and
the second protrusion supports the substrate to be processed during the deformation.

9. The substrate processing device of claim 1 , wherein
the second protrusion is located at the center of the base.

10. A substrate processing device comprising: a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit is configured to support the substrate to be processed, wherein the substrate supporting unit comprises: a first protrusion comprising an upper surface having the contact surface; and a second protrusion having an upper surface lower than the contact surface of the first protrusion, wherein the substrate supporting unit is configured to: support the substrate to be processed through the contact surface of the first protrusion during a first operation of the substrate processing device, and support the substrate to be processed through both of the contact surface of the first protrusion and the upper surface of the second protrusion during a second operation of the substrate processing device, wherein active species are formed when an electric power is supplied between the gas supply unit and the substrate supporting unit, and wherein the second protrusion is configured to relocate the active species adjacent to the second protrusion such that the active species are arranged around a center of the substrate to be processed, wherein the substrate processing device further comprises a suction force generator generating a suction force, wherein, when the substrate to be processed is deformed due to the suction force, the deformed substrate is in line contact with the first protrusion and at the same time in contact with the second protrusion so that the line contact of the substrate by the first protrusion is maintained to prevent flow of reactive gas into the backside of the substrate to be processed and the second protrusion supports the substrate to be processed during the deformation.

11. The substrate processing device of claim 10 , wherein the substrate supporting unit is an edge-contact susceptor (ECS).

12. The substrate processing device of claim 10 , wherein at least a part of the upper surface of the second protrusion is rounded.

13. The substrate processing device of claim 10 , wherein the second protrusion is located at a center of the substrate supporting unit.

14. The substrate processing device of claim 13 , wherein the substrate supporting unit comprises positioning holes that are symmetrically distributed with respect to the second protrusion.

Assignees

• Asm Ip Holding Bv

Inventors

• Lee Seunghwan
• Kwon Hakyong
• Kim Jongsu
• Kim Sungbae
• Park Juhyuk

Classifications

• H10P72/7614 Primary

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/10

  using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] · CPC title