Device and method for processing a microstructured component

Patent metadata

Field	Value
Publication number	US-11487211-B2
Application number	US-202017116127-A
Country	US
Kind code	B2
Filing date	Dec 9, 2020
Priority date	Dec 10, 2019
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

The invention relates to a device and a method for processing a microstructured component, in particular for microlithography. A device for processing a microstructured component comprises an ion beam source for applying an ion beam to at least regions of the component, wherein an ion energy of this ion beam is no more than 5 keV, and a detector for detecting particles backscattered at the component.

First claim

What is claimed is:

1. A device for processing a microstructured component, comprising:
an ion beam source configured to apply an ion beam to at least regions of the component, wherein an ion energy of the ion beam is no more than 5 keV; and
a detector for detecting particles, including ions, backscattered at the component;
wherein the device is configured to define an end of the processing on the basis of a detector signal supplied by the detector,
wherein the ion beam is selected such that impinging the ion beam on different target materials having different atomic numbers produces different backscatter coefficients, and a detectable material contrast is present at a transition between different target materials during application of the ion beam to the regions of the component.

2. The device of claim 1 , wherein the detector is designed to detect electrons backscattered at the component.

3. The device of claim 1 , wherein an ion energy of the ion beam is no more than 3 keV.

4. The device of claim 3 in which the ion energy of the ion beam is no more than 2 keV.

5. The device of claim 1 , wherein an ion energy of the ion beam has a value ranging from 0.1 to 5 keV.

6. The device of claim 5 in which the ion energy of the ion beam has a value ranging from 0.5 to 3 keV.

7. The device of claim 6 in which the ion energy of the ion beam has a value ranging from 1 to 2 keV.

8. The device of claim 1 , wherein the ion beam comprises ions from the group containing hydrogen (H) ions, lithium (Li) ions, sodium (Na) ions, potassium (K) ions, rubidium (Rb) ions, caesium (Cs) ions, nitrogen (N) ions, helium (He) ions, neon (Ne) ions, argon (Ar) ions, krypton (Kr) ions and xenon (Xe) ions.

9. The device of claim 8 in which the ion beam comprises at least one of a hydrogen (H) ion beam, a lithium (Li) ion beam, a sodium (Na) ion beam, a potassium (K) ion beam, a rubidium (Rb) ion beam, a caesium (Cs) ion beam, a nitrogen (N) ion beam, a helium (He) ion beam, a neon (Ne) ion beam, a krypton (Kr) ion beam, or a xenon (Xe) ion beam.

10. The device of claim 9 in which the ion beam comprises at least one of a lithium (Li) ion beam, a sodium (Na) ion beam, a potassium (K) ion beam, a rubidium (Rb) ion beam, or a caesium (Cs) ion beam.

11. The device of claim 1 , wherein the ion beam has a focal diameter of less than 10 nm.

12. The device of claim 11 in which the ion beam has a focal diameter of less than 5 nm.

13. The device of claim 12 in which the ion beam has a focal diameter of less than 2 nm.

14. The device of claim 1 , wherein the device further comprises a gas supply for additionally applying a process gas to the component.

15. The device of claim 1 , wherein the device is configured to have sufficient resolution to enable the device to process structures present on the microstructured component that have a structure size of less than 10 nm.

16. The device of claim 1 , wherein the device is configured to repeatedly scan the regions of the microstructured component with the ion beam to process the microstructured component by an ablation of material situated between structures present on the microstructured component.

17. The device of claim 1 , comprising a mask stage to support a microlithographic mask, wherein the device is configured to process the microlithographic mask.

18. The device of claim 1 , comprising a wafer stage to support a microlithographically structured wafer, wherein the device is configured to process the microlithographically structured wafer.

19. A method for processing a microstructured component, wherein the method includes the following steps:
applying an ion beam to the component to perform an ablation of material situated between structures present on the microstructured component, wherein an ion energy of the ion beam is no more than 5 keV;
using a detector to detect particles backscattered at the component, wherein the particles comprise ions; and
defining an end of the processing on the basis of a detector signal supplied by the detector;
wherein the ion beam is selected such that impinging the ion beam on different target materials having different atomic numbers produces different backscatter coefficients, and a detectable material contrast is present at a transition between different target materials during application of the ion beam to the regions of the component.

20. The device of claim 1 , wherein the device is configured to define the end of the processing on the basis of a detector signal supplied by the detector indicating a change in backscatter coefficients.

21. The device of claim 1 in which the device is configured to define the end of the processing on the basis of detecting a change in the backscatter coefficient.

22. The method of claim 19 , wherein the method is carried out using a device according to claim 1 .

23. The method of claim 19 , wherein the particles comprise electrons.

24. A method for processing a microstructured component, the method comprising:
applying an ion beam to the component, wherein an ion energy of this ion beam is no more than 5 keV;
using a detector to detect ions backscattered at the component; and
modifying a processing of the component by the ion beam on the basis of a detector signal supplied by the detector indicating a change in backscatter coefficients.

25. The method of claim 24 , comprising defining an end of the processing on the basis of a detector signal supplied by the detector indicating the change in backscatter coefficients.

26. A device for processing a microstructured component, comprising:
an ion beam source configured to apply an ion beam to at least regions of the component, in which an ion energy of the ion beam is no more than 5 keV; and
a detector for detecting ions backscattered at the component;
wherein the device is configured to modify a processing of the component by the ion beam based on a change in backscatter coefficients.

27. The apparatus of claim 26 in which the device is configured to define an end of the processing on the basis of a detector signal supplied by the detector indicating a change in the backscatter coefficients.

28. The apparatus of claim 26 in which the ion beam source comprises a low temperature ion source.

29. The apparatus of claim 28 in which the ion beam source comprises a first laser that is configured to cool neutral atoms in a magneto-optical trap to produce low temperature atoms, and
a second laser that is configured photoionize the low temperature atoms to produce low temperature ions.

30. The device of claim 26 , a wherein the microstructured component comprises a first material and a second material different from the first material,
wherein the detector is configured to detect particles backscattered at the component and generate a detection signal;
wherein the device is configured to modify the processing of the component by the ion beam based on a change in the detector signal supplied by the detector indicating a transition between the first material and the second material in the component.

31. The apparatus of claim 30 in which the device is configured to define an end of the processing of the component on the basis of the change in the detector signal indicating the transition between the first material and the second material in the compon

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Auth Nicole
• Luchs Timo
• Welte Joachim

Classifications

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F1/74 Primary

  by charged particle beam [CPB], e.g. focused ion beam · CPC title

• G03F7/7085 Primary

  Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load · CPC title

• H01J37/304 Primary

  Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals · CPC title

• H01J2237/30466

  Detecting endpoint of process · CPC title