Manufacturing method of integrated circuit packaging structure

Patent metadata

Field	Value
Publication number	US-11476173-B2
Application number	US-202016923075-A
Country	US
Kind code	B2
Filing date	Jul 7, 2020
Priority date	Jan 22, 2019
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

A manufacturing method of an integrated circuit (IC) packaging structure includes the following steps. One or a plurality of dies is disposed on a packaging substrate. An encapsulation material is formed on the packaging substrate. The encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate. At least one trench is formed in the encapsulation material. A heat dissipation structure is formed on the encapsulation material, and at least a part of the heat dissipation structure is formed in the at least one trench. The step of forming the heat dissipation structure includes the following steps. A first slurry is formed in the at least one trench, and a first curing process is performed to the first slurry for forming a first portion of the heat dissipation structure.

First claim

What is claimed is:

1. A manufacturing method of an integrated circuit (IC) packaging structure, comprising:
disposing one or a plurality of dies on a packaging substrate;
forming an encapsulation material on the packaging substrate, wherein the encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate;
forming at least one trench in the encapsulation material; and
forming a heat dissipation structure on the encapsulation material, wherein at least a part of the heat dissipation structure is formed in the at least one trench, a part of the encapsulation material is located between the heat dissipation structure and the one or the plurality of the dies for isolating the heat dissipation structure from the one or the plurality of the dies, and the step of forming the heat dissipation structure comprises:
forming a first slurry in the at least one trench;
performing a first curing process to the first slurry for forming a first portion of the heat dissipation structure; and
forming a second slurry on a surface of the encapsulation material after forming the first slurry in the at least one trench, wherein a material composition of the second slurry is different from a material composition of the first slurry, the first slurry comprises first metal particles, the second slurry comprises second metal particles, and a dimension of each of the second metal particles is larger than a dimension of each of the first metal particles for forming an uneven surface of the heat dissipation structure, wherein the uneven surface of the heat dissipation structure is a top surface facing away from the encapsulation material.

2. The manufacturing method of the IC packaging structure according to claim 1 , wherein the step of forming the heat dissipation structure further comprises:
performing a second curing process to the second slurry for forming a second portion of the heat dissipation structure on the surface of the encapsulation material, wherein the second slurry is formed after the first curing process.

3. The manufacturing method of the IC packaging structure according to claim 1 , wherein the second slurry is formed before the first curing process, and the second slurry is cured by the first curing process to be a second portion of the heat dissipation structure on the surface of the encapsulation material.

4. The manufacturing method of the IC packaging structure according to claim 1 , further comprising:
performing a cutting process after the step of forming the heat dissipation structure.

5. The manufacturing method of the IC packaging structure according to claim 1 , further comprising:
performing a cutting process after the step of forming the encapsulation material and before the step of forming the at least one trench.

6. The manufacturing method of the IC packaging structure according to claim 1 , wherein a heat transfer coefficient of the heat dissipation structure is higher than a heat transfer coefficient of the encapsulation material.

7. The manufacturing method of the IC packaging structure according to claim 2 , wherein the second portion of the heat dissipation structure is formed outside the trench.

8. The manufacturing method of the IC packaging structure according to claim 2 , wherein the second portion of the heat dissipation structure is formed on a topmost surface of the encapsulation material in a thickness direction of the packaging substrate.

9. The manufacturing method of the IC packaging structure according to claim 2 , wherein the second curing process is different from the first curing process.

10. The manufacturing method of the IC packaging structure according to claim 1 , wherein the one or the plurality of the dies are electrically connected to the packaging substrate.

11. The manufacturing method of the IC packaging structure according to claim 1 , wherein the one or the plurality of the dies are electrically connected to the packaging substrate by a bonding wire.

12. The manufacturing method of the IC packaging structure according to claim 11 , wherein the bonding wire comprises an aluminum wire, a copper wire, a silver wire, or a gold wire.

13. The manufacturing method of the IC packaging structure according to claim 11 , wherein the one or the plurality of the dies are disposed on a first surface of the packaging substrate, connection structures are disposed on a second surface of the packaging substrate, and the second surface is opposite to the first surface in a thickness direction of the packaging substrate.

14. The manufacturing method of the IC packaging structure according to claim 13 , wherein the one or the plurality of the dies are electrically connected to the connection structures via the bonding wire and the packaging substrate.

15. The manufacturing method of the IC packaging structure according to claim 13 , wherein the connection structures are solder balls.

16. The manufacturing method of the IC packaging structure according to claim 1 , wherein the first metal particles are silver powders.

17. The manufacturing method of the IC packaging structure according to claim 1 , wherein the packaging substrate is a plastic substrate.

18. The manufacturing method of the IC packaging structure according to claim 1 , wherein the packaging substrate comprises an epoxy substrate, or a bismaleimide triazine (BT) resin substrate.

19. The manufacturing method of the IC packaging structure according to claim 1 , wherein the encapsulation material comprises a plastic material.

20. The manufacturing method of the IC packaging structure according to claim 1 , wherein the encapsulation material comprises an epoxy molding compound (EMC).

Assignees

• Yangtze Memory Tech Co Ltd

Inventors

• Chen Peng
• Zhou Houde
• Zhang Baohua
• Gu Chao

Classifications

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title