Pulsed-voltage hardware assembly for use in a plasma processing system

Patent metadata

Field	Value
Publication number	US-11462389-B2
Application number	US-202117315259-A
Country	US
Kind code	B2
Filing date	May 7, 2021
Priority date	Jul 31, 2020
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

First claim

What is claimed is:

1. A pulsed-voltage subsystem assembly, comprising:
a pulsed-voltage-generating unit enclosure, comprising
a first pulsed-voltage waveform generator electrically coupled to a first generator output coupling assembly; and

a junction box enclosure, comprising:
a first bias compensation module compartment comprising:
a first blocking capacitor electrically coupled between a first bias compensation module output coupling assembly and the first generator output coupling assembly; and
a first DC power supply having a positive terminal and a negative terminal, wherein the positive terminal or the negative terminal is electrically coupled to the first bias compensation module output coupling assembly; and

a radio frequency filter compartment, comprising:
a first radio frequency filter assembly electrically coupled between a first radio frequency filter output coupling assembly and the first bias compensation module output coupling assembly,

wherein
the pulsed-voltage subsystem assembly is configured to be coupled to a plasma processing chamber, and
the first radio frequency filter output coupling assembly is configured to be electrically coupled to a first electrode disposed in the plasma processing chamber.

2. The pulsed-voltage subsystem assembly of claim 1 , wherein the first bias compensation module compartment further comprises:
a blocking resistor that has a resistance of more than about 500 kOhm, and is disposed between the first DC power supply and the first generator output coupling assembly; and
a diode that is connected in parallel with the blocking resistor.

3. The pulsed-voltage subsystem assembly of claim 1 , further comprising a pulsed-voltage filter assembly comprises a second blocking capacitor, wherein
the first radio frequency filter assembly comprises a radio frequency filter capacitor and a radio frequency filter inductor that are connected in parallel, and
the second blocking capacitor has a capacitance that is less than the capacitance of the first blocking capacitor.

4. The pulsed-voltage subsystem assembly of claim 1 , wherein
the first pulsed-voltage waveform generator is configured to generate a first pulsed voltage waveform that comprises a series of repeating cycles, such that
a waveform within each cycle has a first portion that occurs during a first time interval and a second portion that occurs during a second time interval, and
the first pulsed-voltage waveform generator is configured to provide a substantially constant negative voltage during the second time interval.

5. The pulsed-voltage subsystem assembly of claim 1 , wherein
the first pulsed-voltage waveform generator is configured to generate a first pulsed voltage waveform that comprises a series of repeating cycles, such that
a waveform within each cycle has a first portion that occurs during a first time interval and a second portion that occurs during a second time interval, and
a positive voltage pulse is only present during the first time interval, and the first pulsed voltage waveform is substantially constant during at least a portion of the second time interval.

6. The pulsed-voltage subsystem assembly of claim 1 , wherein
the pulsed-voltage-generating unit enclosure further comprises:
one or more generating unit enclosure walls that substantially enclose the first pulsed-voltage waveform generator, wherein the one or more generating unit enclosure walls are grounded, and

the junction box enclosure further comprises:
one or more first junction box enclosure walls that substantially enclose the first bias compensation module compartment, and
wherein the one or more first junction box enclosure walls are grounded.

7. The pulsed-voltage subsystem assembly of claim 1 , further comprising:
a radio frequency generating unit enclosure, comprising:
a first radio frequency generator electrically coupled to a first RF generator output coupling assembly through a first pulse-voltage filter assembly; and
wherein the first RF generator output coupling assembly is configured to be electrically coupled to a second electrode disposed in the plasma processing chamber.

8. The pulsed-voltage subsystem assembly of claim 7 , wherein
the first pulsed-voltage waveform generator is configured to generate a first pulsed voltage waveform that comprises a series of repeating cycles, such that
a waveform within each cycle has a first portion that occurs during a first time interval and a second portion that occurs during a second time interval, and
the first pulsed-voltage waveform generator is configured to provide a substantially constant negative voltage during the second time interval.

9. A pulsed-voltage subsystem assembly, comprising:
a pulsed-voltage-generating unit enclosure, comprising
a first pulsed-voltage waveform generator electrically coupled to a first generator output coupling assembly; and
a second pulsed-voltage waveform generator that is electrically coupled to a second generator output coupling assembly;

a junction box enclosure, comprising:
a first bias compensation module compartment comprising:
a first blocking capacitor electrically coupled between a first bias compensation module output coupling assembly and the first generator output coupling assembly; and
a first DC power supply having a positive terminal and a negative terminal, wherein the positive terminal or the negative terminal is electrically coupled to the first bias compensation module output coupling assembly;

a second bias compensation module compartment, comprising:
a second blocking capacitor electrically coupled between a second bias compensation module output coupling assembly and the second generator output coupling assembly; and
a second DC power supply having a positive terminal and a negative terminal, wherein the positive terminal or the negative terminal is electrically coupled to the second bias compensation module output coupling assembly; and

a radio frequency filter compartment, comprising:
a first radio frequency filter assembly electrically coupled between a first radio frequency filter output coupling assembly and the first bias compensation module output coupling assembly; and
a second radio frequency filter assembly electrically coupled between a second radio frequency filter output coupling assembly and the second bias compensation module output coupling assembly,

wherein
the pulsed-voltage subsystem assembly is configured to be coupled to a plasma processing chamber,
the first radio frequency filter output coupling assembly is configured to be electrically coupled to a first electrode disposed in the plasma processing chamber, and
the second radio frequency filter output coupling assembly is configured to be electrically coupled to a second electrode disposed in the plasma processing chamber.

10. The pulsed-voltage subsystem assembly of claim 9 , wherein
the pulsed-voltage-generating unit enclosure further comprises:
one or more generating unit enclosure walls that substantially enclose the first pulsed-voltage waveform generator and the second pulsed-voltage waveform generator, wherein the one or more generating unit enclosure walls are grounded, and

the junction box enclosure further comprises:
one or more first junction box enclosure walls that substantially enclose the first bias compensation module compartment, and
one or more second junction box enclosure walls that substantially enclose the second bias compensation module compartment,
wherein the one or more first junction box enclosure walls and the one or more second junction box enclosure walls are grounded.

11. The pulsed-voltage subsystem ass

Assignees

• Applied Materials Inc

Inventors

• Dorf Leonid
• Dhindsa Rajinder
• Rogers James
• Byun Daniel Sang
• Kamenetskiy Evgeny
• Guo Yue
• Ramaswamy Kartik
• Todorow Valentin N
• Luere Olivier
• Kolbeck Jonathan
• Cui Linying

Classifications

• H10P72/72

  using electrostatic chucks · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• H01J37/32146 Primary

  Amplitude modulation, includes pulsing · CPC title