Recoiled metal thin film for 3D inductor with tunable core

Patent metadata

Field	Value
Publication number	US-11444148-B2
Application number	US-201816222253-A
Country	US
Kind code	B2
Filing date	Dec 17, 2018
Priority date	Dec 17, 2018
Publication date	Sep 13, 2022
Grant date	Sep 13, 2022

Abstract

An inductor is disclosed. The inductor includes a vertically coiled conductor, a metal contact coupled to a first end of the vertically coiled conductor, and a dielectric material coupled to the metal contact. A tunable high permittivity component is coupled to a second end of the vertically coiled conductor.

First claim

What is claimed is:

1. An inductor, comprising:
a vertically coiled conductor;
a metal contact coupled to a first end of the vertically coiled conductor;
a dielectric material coupled to the metal contact; and
a tunable high permittivity component coupled to a second end of the vertically coiled conductor.

2. The inductor of claim 1 , wherein the vertically coiled conductor is in a via of the dielectric material.

3. The inductor of claim 1 , wherein the tunable high permittivity component is a tunable high permittivity core.

4. The inductor of claim 1 , wherein the tunable high permittivity component is coiled.

5. The inductor of claim 1 , wherein the tunable high permittivity component is uncoiled.

6. The inductor of claim 1 , wherein the vertically coiled conductor is coiled vertically downward.

7. The inductor of claim 1 , wherein the vertically coiled inductor is coiled vertically upward.

8. A semiconductor structure, comprising:
a substrate;
a plurality of inductors coupled to the substrate, including:

a vertically coiled conductor;
a metal contact coupled to a first end of the vertically coiled conductor;
a dielectric material coupled to the metal contact; and
a tunable high permittivity component coupled to a second end of the vertically coiled conductor.

9. The semiconductor structure of claim 8 , wherein the vertically coiled conductor is in a via of the dielectric material.

10. The semiconductor structure of claim 8 , wherein the tunable high permittivity component is a tunable high permittivity core.

11. The semiconductor structure of claim 8 , wherein the tunable high permittivity component is coiled.

12. The semiconductor structure of claim 8 , wherein the tunable high permittivity component is uncoiled.

13. The semiconductor structure of claim 8 , wherein the vertically coiled conductor is coiled vertically downward.

14. The semiconductor structure of claim 8 , wherein the vertically coiled inductor is coiled vertically upward.

Assignees

• Intel Corp

Inventors

• Kim Gwang-Soo
• Lilak Aaron D
• Byon Kumhyo
• Ingerly Doug

Classifications

• H10D84/80

  characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/067

  by modifying the pattern of conductive parts · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H01F41/046

  structurally combined with ferromagnetic material · CPC title