Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

Patent metadata

Field	Value
Publication number	US-11437250-B2
Application number	US-201916402611-A
Country	US
Kind code	B2
Filing date	May 3, 2019
Priority date	Nov 15, 2018
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A processing system and platform for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.

First claim

What is claimed is:

1. A processing system to perform a wet etch process on a substrate, comprising:
a wet process chamber configured to perform a wet chemical process;
a substrate holder within the wet process chamber, and configured to support a substrate having a first material and a second material;
a chemical supply system configured to supply a first chemical solution and a second chemical solution, the second chemical solution being different than the first chemical solution;
a chemical injection manifold fluidically coupled to the wet process chamber, and configured to cyclically dispense the first chemical solution and the second chemical solution; and
a controller programmably configured to perform the wet etch process to selectively remove the first material with respect to the second material by controlling a time duration for each dispense cycle of the first chemical solution and the second chemical solution, wherein the controller is configured to, in each dispense cycle:
control the chemical injection manifold to expose the substrate to the first chemical solution to chemically modify the first material to create a chemically modified layer, wherein controlling the chemical injection manifold to create the chemically modified layer comprises controlling the chemical injection manifold to dispense the first chemical solution onto a surface of the substrate, wherein the first chemical solution chemically modifies the surface of the substrate to create the chemically modified layer; and
control the chemical injection manifold to remove the chemically modified layer without removing the second material, wherein controlling the chemical injection manifold to remove the chemically modified layer comprises dispensing the second chemical solution onto the chemically modified layer.

2. The processing system of claim 1 , wherein the first chemical solution comprises an oxidizing agent.

3. The processing system of claim 2 , wherein the first chemical solution comprises an oxygen-saturated chemical solution.

4. The processing system of claim 3 , wherein the first chemical solution comprises an oxygen-saturated chemical solution that includes oxygen dissolved in water, alcohol, or acetone.

5. The processing system of claim 4 , wherein the chemical supply system is further configured to supply a complexing agent.

6. The processing system of claim 5 , wherein the complexing agent includes a citrate.

7. The processing system of claim 1 , the chemical supply system is further arranged to supply a solvent rinse solution.

8. The processing system of claim 7 , wherein the controller is programmably configured to control the chemical injection manifold to provide the solvent rinse solution following chemical modification of the surface and preceding selective removal of the chemically modified layer.

9. The processing system of claim 1 , wherein the controller is programmably configured to provide the cyclical dispense of the first chemical solution and the second chemical solution partially overlapping in time.

10. The processing system of claim 1 , wherein the controller is programmably configured to provide the cyclical dispense of the first chemical solution and the second chemical solution in a manner not overlapping in time.

11. The processing system of claim 1 , wherein the first chemical solution includes a complexing agent, and the second chemical solution comprises water.

12. A platform for etching a substrate having polycrystalline material, comprising:
a dry etching apparatus configured to etch the polycrystalline material;
a wet etching apparatus configured to selectively etch the polycrystalline material with respect to another material on the substrate,
wherein the wet etching apparatus comprises a wet process chamber, a substrate holder configured to support the substrate within the wet process chamber, a chemical supply system, a chemical injection manifold, and a controller configured to control at least the chemical injection manifold to selectively etch the polycrystalline material with respect to the another material;
wherein the wet etching apparatus is configured to supply a first chemical solution and a second chemical solution onto the substrate within the wet process chamber, the second chemical solution being different than the first chemical solution;
wherein the first chemical solution is configured to chemically modify the polycrystalline material to create a chemically modified layer; and
wherein the second chemical solution is configured to remove the chemically modified layer without removing the another material;

a transfer module for moving the substrate between the dry etching apparatus and the wet etching apparatus; and
an isolation pass-through module disposed between the transfer module and the wet etching apparatus to separate a transfer module environment of the transfer module from a wet etch apparatus environment of the wet etching apparatus.

13. The platform of claim 12 , wherein the polycrystalline material is a transition metal.

14. The platform of claim 12 , the dry etching apparatus is configured to first etch the polycrystalline material to a first surface roughness value and the wet etching apparatus is configured to subsequently etch the polycrystalline material to a second surface roughness value, second surface roughness value being less than the first surface roughness value.

15. The platform of claim 14 , wherein the platform is configured to maintain the substrate in a controlled environment without exposure to ambient conditions when the substrate is transferred from the dry etching apparatus to the wet etching apparatus.

16. The platform of claim 15 , wherein the first chemical solution comprises an oxidizing agent.

17. The platform of claim 16 , wherein the wet etching apparatus is further arranged to supply a solvent rinse solution.

18. The platform of claim 17 , wherein the wet etching apparatus is configured to provide the solvent rinse solution following chemical modification of the surface, and preceding selective removal of the chemically modified layer.

19. The platform of claim 12 , wherein the platform is configured to maintain the substrate in a controlled environment without exposure to ambient conditions when the substrate is transferred from the dry etching apparatus to the wet etching apparatus.

20. The platform of claim 12 , wherein the first chemical solution comprises an oxidizing agent.

21. The processing system of claim 5 , wherein controlling the chemical injection manifold to create the chemically modified layer further comprises controlling the chemical injection manifold to dispense the complexing agent onto the surface of the substrate.

22. The processing system of claim 21 , wherein the first chemical solution comprises the complexing agent.

Assignees

• Tokyo Electron Ltd

Inventors

• Abel Paul

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/33

  into and out of processing chamber · CPC title

• H10P72/32

  between different workstations · CPC title

• H10P72/0422 Primary

  for wet etching · CPC title

• H10P50/667

  by liquid etching only · CPC title