Semiconductor device

Patent metadata

Field	Value
Publication number	US-11430817-B2
Application number	US-201715697627-A
Country	US
Kind code	B2
Filing date	Sep 7, 2017
Priority date	Nov 29, 2013
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

First claim

The invention claimed is:

1. A semiconductor device comprising:
an insulating layer;
wherein the insulating layer includes hydrogen;

a first conductive film,
wherein the first conductive film includes a Cu—X alloy film and a Cu film over the Cu—X alloy film, and
wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti;

a capacitor comprising:
a first oxide semiconductor film having conductivity;
an insulating film;
the first conductive film; and
a second conductive film,

wherein the first conductive film in contact with the first oxide semiconductor film,
wherein the insulating film is over the first oxide semiconductor film and the first conductive film,
wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×10 19 atoms/cm 3 ,
wherein the first oxide semiconductor film is in contact with the insulating layer, and
wherein the second conductive film is over the insulating film and overlaps with the first oxide semiconductor film;
a transistor comprising:
a second oxide semiconductor film; and
the first conductive film,

wherein the first conductive film in contact with the second oxide semiconductor film,
wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×10 19 atoms/cm 3 , and
wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×10 −8 times and lower than 1×10 −1 times a resistivity of the second oxide semiconductor film.

2. The semiconductor device according to claim 1 ,
wherein the resistivity of the first oxide semiconductor film is higher than or equal to 1×10 −3 Ωcm and lower than 1×10 4 Ωcm.

3. The semiconductor device according to claim 1 ,
wherein the first conductive film includes a Cu—Mn alloy film.

4. The semiconductor device according to claim 3 ,
wherein a part of the Cu film is covered with a film including manganese oxide, and
wherein the part of the Cu film is in contact with the film including manganese oxide.

5. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film includes hydrogen and an oxygen vacancy, and
wherein the hydrogen is located in the oxygen vacancy.

6. The semiconductor device according to claim 1 ,
wherein the insulating film is a nitride insulating film.

7. The semiconductor device according to claim 1 ,
wherein the hydrogen concentration of the first oxide semiconductor film having conductivity is higher than or equal to 5×10 20 atoms/cm 3 .

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi
• Shima Yukinori
• Jintyou Masami
• Hamochi Takashi
• Higano Satoshi
• Hosaka Yasuharu
• Obonai Toshimitsu

Classifications

• H10D30/6756

  Amorphous oxide semiconductors · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D1/692

  Electrodes · CPC title

• H10D1/474

  comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · CPC title

• H10D1/47

  Resistors having no potential barriers · CPC title