Semiconductor device

Patent metadata

Field	Value
Publication number	US-8999750-B2
Application number	US-201313919615-A
Country	US
Kind code	B2
Filing date	Jun 17, 2013
Priority date	Dec 5, 2008
Publication date	Apr 7, 2015
Grant date	Apr 7, 2015

Abstract

A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over a substrate;
forming a silicon nitride film over the oxide semiconductor film;
forming a silicon oxide film over the silicon nitride film;
removing part of the silicon oxide film;
forming a conductive film having a light-transmitting property over the silicon oxide film;
forming a resist mask using a multi-tone mask over the oxide sem…

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime

Classifications

• G02F2201/40

  Physics · mapped topic

• G02F1/13439

  Physics · mapped topic

• G02F1/136286

  Physics · mapped topic

• G02F1/133528

  Physics · mapped topic

• G02F1/136277

  Physics · mapped topic