Semiconductor device and method for producing same

Patent metadata

Field	Value
Publication number	US-9276126-B2
Application number	US-201314375914-A
Country	US
Kind code	B2
Filing date	Jan 24, 2013
Priority date	Jan 31, 2012
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

This semiconductor device ( 100 A) includes: a substrate ( 1 ); a gate electrode ( 3 ) and a first transparent electrode ( 2 ) which are formed on the substrate ( 1 ); a first insulating layer ( 4 ) formed over the gate electrode ( 3 ) and the first transparent electrode ( 2 ); an oxide semiconductor layer ( 5 ) formed on the first insulating layer ( 4 ); source and drain electrodes ( 6 s, 6 d ) electrically connected to the oxide semiconductor layer ( 5 ); and a second transparent electrode ( 7 ) electrically connected to the drain electrode ( 6 d ). At least a portion of the first transparent electrode ( 2 ) overlaps with the second transparent electrode ( 7 ) with the first insulating layer ( 4 ) interposed between them, and the oxide semiconductor layer ( 5 ) and the second transparent electrode ( 7 ) are formed out of the same oxide film.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a substrate;
a gate electrode provided on the substrate;
a second insulating layer which is provided over the gate electrode;
a first transparent electrode provided on the second insulating layer;
a first insulating layer provided over the second insulating layer and the first transparent electrode;
an oxide semiconductor layer provided on the first insulating layer;
source and drain electrodes electrically connected to the oxide semiconductor layer; and
a second transparent electrode electrically connected to the drain electrode, wherein
at least a portion of the oxide semiconductor layer overlaps with the gate electrode with the first insulating layer and the second insulating layer interposed between them, at least a portion of the first transparent electrode overlaps with the second transparent electrode with the first insulating layer interposed between them, and the oxide semiconductor layer and the second transparent electrode are made from the same oxide film.

2. The semiconductor device of claim 1 , wherein the drain electrode is provided on the second transparent electrode, and
the second transparent electrode contacts directly with the drain electrode.

3. The semiconductor device of claim 1 or 2 , wherein the second transparent electrode contains an impurity at a higher concentration than the oxide semiconductor layer.

4. The semiconductor device of claim 1 , further comprising an insulating protective layer provided over the source and drain electrodes,
wherein the insulating protective layer contacts with a channel region of the oxide semiconductor layer, and
the insulating protective layer is made of an oxide.

5. The semiconductor device of claim 1 , wherein the first insulating layer includes an oxide insulating layer, and
the oxide insulating layer contacts with the oxide semiconductor layer.

6. The semiconductor device of claim 1 , wherein the same oxide film includes In, Ga and Zn.

7. The semiconductor device of claim 1 , wherein the oxide semiconductor layer includes an In—Ga—Zn—O based semiconductor.

Assignees

• Sharp Kk

Inventors

• Miyamoto Tadayoshi
• ITO Kazuatsu
• Mori Shigeyasu
• Miyamoto Mitsunobu
• Ogawa Yasuyuki
• Nakazawa Makoto
• Uchida Seiichi
• Matsuo Takuya

Classifications

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title