Liquid crystal display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11417688-B2
Application number	US-202117331826-A
Country	US
Kind code	B2
Filing date	May 27, 2021
Priority date	Sep 13, 2010
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

First claim

What is claimed is:

1. A display device comprising:
a pixel portion comprising:
a transistor comprising a channel formation region comprising indium, gallium, zinc, and oxygen, the transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
a source electrode and a drain electrode electrically connected to the channel formation region; and
a second insulating layer over the source electrode and the drain electrode;

and
a pixel electrode over and in contact with the second insulating layer, the pixel electrode being electrically connected to one of the source electrode and the drain electrode; and

a connecting portion comprising:
a first conductive layer;
the first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer;
the second insulating layer over the oxide semiconductor layer; and
a second conductive layer over and in contact with the second insulating layer,

wherein the second conductive layer is electrically connected to the first conductive layer through a contact hole provided in the first insulating layer, the oxide semiconductor layer, and the second insulating layer,
wherein the second conductive layer comprises a first edge portion and a second edge portion opposite to the first edge portion,
wherein the first edge portion of the second conductive layer comprises a region overlapping with the first conductive layer,
wherein the second edge portion of the second conductive layer comprises a region overlapping with the first conductive layer, and
wherein the second conductive layer comprises the same material as the pixel electrode.

2. The display device according to claim 1 , wherein the oxide semiconductor layer is in contact with an upper surface of the first insulating layer.

3. The display device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

4. The display device according to claim 1 , further comprising:
a liquid crystal material over the first conductive layer.

5. The display device according to claim 1 , wherein the channel formation region comprises crystals with c-axis alignment.

6. A display device comprising:
a pixel portion comprising:
a transistor comprising a channel formation region comprising indium, gallium, zinc, and oxygen, the transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
a source electrode and a drain electrode electrically connected to the channel formation region; and
a second insulating layer over the source electrode and the drain electrode; and

a pixel electrode over and in contact with the second insulating layer, the pixel electrode being electrically connected to one of the source electrode and the drain electrode; and

a connecting portion comprising:
a first conductive layer;
the first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer;
the second insulating layer over the oxide semiconductor layer; and
a second conductive layer over and in contact with the second insulating layer,

wherein the second conductive layer is electrically connected to the first conductive layer through a contact hole provided in the first insulating layer, the oxide semiconductor layer, and the second insulating layer,
wherein the second conductive layer comprises a first edge portion and a second edge portion opposite to the first edge portion,
wherein the first edge portion of the second conductive layer comprises a region overlapping with the first conductive layer,
wherein the second edge portion of the second conductive layer comprises a region overlapping with the first conductive layer,
wherein the second conductive layer comprises the same material as the pixel electrode, and
wherein each of the gate electrode and the second conductive layer comprises a titanium layer and a copper layer over the titanium layer.

7. The display device according to claim 6 , wherein the oxide semiconductor layer is in contact with an upper surface of the first insulating layer.

8. The display device according to claim 6 , wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

9. The display device according to claim 6 , further comprising:
a liquid crystal material over the first conductive layer.

10. The display device according to claim 6 , wherein the channel formation region comprises crystals with c-axis alignment.

11. A display device comprising:
a pixel portion comprising:
a transistor comprising a channel formation region comprising indium, gallium, zinc, and oxygen, the transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
a source electrode and a drain electrode electrically connected to the channel formation region; and
a second insulating layer over the source electrode and the drain electrode; and

a pixel electrode over and in contact with the second insulating layer, the pixel electrode being electrically connected to one of the source electrode and the drain electrode; and

a connecting portion outside the pixel portion, the connecting portion comprising:
a first conductive layer;
the first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer;
the second insulating layer over the oxide semiconductor layer;
a second conductive layer over and in contact with the second insulating layer;
a conductive particle over and electrically connected to the second conductive layer; and
a flexible printed circuit over and electrically connected to the conductive particle,

wherein the second conductive layer is electrically connected to the first conductive layer through a contact hole provided in the first insulating layer, the oxide semiconductor layer, and the second insulating layer,
wherein the second conductive layer comprises a first edge portion and a second edge portion opposite to the first edge portion,
wherein the first edge portion of the second conductive layer comprises a region overlapping with the first conductive layer,
wherein the second edge portion of the second conductive layer comprises a region overlapping with the first conductive layer, and
wherein the second conductive layer comprises the same material as the pixel electrode.

12. The display device according to claim 11 , wherein the oxide semiconductor layer is in contact with an upper surface of the first insulating layer.

13. The display device according to claim 11 , wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

14. The display device according to claim 11 , further comprising:
a liquid crystal material over the first conductive layer.

15. The display device according to claim 11 , wherein the channel formation region comprises crystals with c-axis alignment.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Hatano Kaoru

Classifications

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title