Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9373525-B2
Application number	US-201414548955-A
Country	US
Kind code	B2
Filing date	Nov 20, 2014
Priority date	Oct 22, 2008
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising:
forming a semiconductor layer that comprises an oxide semiconductor including indium;
processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer;
processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer; and
performing oxygen radical treatment on the recessed portion.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the island-shaped semiconductor layer is an In—Ga—Zn—O based non-single-crystal film.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein an oxygen content in a gas used in the dry etching is 15 volume % or more.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxygen radical treatment is performed under an atmosphere comprising chlorine and fluorine.

5. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
after forming the recessed portion, performing heat treatment on the island-shaped semiconductor layer at 200° C. to 600° C.

6. The method for manufacturing a semiconductor device according to claim 5 , wherein the heat treatment is performed under an atmosphere comprising nitrogen.

7. The method for manufacturing a semiconductor device according to claim 5 , wherein the heat treatment is performed at 300° C. to 500° C.

8. A method for manufacturing a semiconductor device comprising:
forming a semiconductor layer that comprises an oxide semiconductor including indium;
processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer;
processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer, and
forming an insulating layer over the island-shaped semiconductor layer.

9. The method for manufacturing a semiconductor device according to claim 8 , wherein the insulating layer comprises aluminum oxide.

10. The method for manufacturing a semiconductor device according to claim 8 , wherein the insulating layer comprises tantalum oxide.

11. The method for manufacturing a semiconductor device according to claim 8 , wherein the island-shaped semiconductor layer is an In—Ga—Zn—O based non-single-crystal film.

12. The method for manufacturing a semiconductor device according to claim 8 , wherein an oxygen content in a gas used in the dry etching is 15 volume % or more.

13. The method for manufacturing a semiconductor device according to claim 8 , further comprising:
after forming the recessed portion, performing heat treatment on the island-shaped semiconductor layer at 200° C. to 600° C.

14. The method for manufacturing a semiconductor device according to claim 13 , wherein the heat treatment is performed under an atmosphere comprising nitrogen.

15. The method for manufacturing a semiconductor device according to claim 13 , wherein the heat treatment is performed at 300° C. to 500° C.

16. A method for manufacturing a semiconductor device comprising:
forming an insulating layer;
forming a semiconductor layer over the insulating layer, wherein the semiconductor layer comprises an oxide semiconductor including indium; and
processing the semiconductor layer by dry etching to form a recessed portion in the semiconductor layer;
wherein an oxygen content in a gas used in the dry etching is 15 volume % or more.

17. The method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor layer is an In—Ga—Zn—O based non-single-crystal film.

18. The method for manufacturing a semiconductor device according to claim 16 , further comprising:
after forming the recessed portion, performing heat treatment on the semiconductor layer at 200° C. to 600° C.

19. The method for manufacturing a semiconductor device according to claim 18 , wherein the heat treatment is performed under an atmosphere comprising nitrogen.

20. The method for manufacturing a semiconductor device according to claim 18 , wherein the heat treatment is performed at 300° C. to 500° C.

21. A method for manufacturing a semiconductor device comprising:
forming a semiconductor layer that comprises an oxide semiconductor including indium;
processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer;
processing the island-shaped semiconductor layer by dry etching; and
after processing the island-shaped semiconductor layer, performing oxygen radical treatment on the island-shaped semiconductor layer.

22. The method for manufacturing a semiconductor device according to claim 21 , wherein the island-shaped semiconductor layer is an In—Ga—Zn—O based non-single-crystal film.

23. The method for manufacturing a semiconductor device according to claim 21 , wherein an oxygen content in a gas used in the dry etching is 15 volume % or more.

24. The method for manufacturing a semiconductor device according to claim 21 , wherein the oxygen radical treatment is performed under an atmosphere comprising chlorine and fluorine.

25. The method for manufacturing a semiconductor device according to claim 21 , further comprising:
after processing the island-shaped semiconductor layer, performing heat treatment on the island-shaped semiconductor layer at 200° C. to 600° C.

26. The method for manufacturing a semiconductor device according to claim 25 , wherein the heat treatment is performed under an atmosphere comprising nitrogen.

27. The method for manufacturing a semiconductor device according to claim 25 , wherein the heat treatment is performed at 300° C. to 500° C.

Assignees

• Semiconductor Energy Lab

Inventors

• Suzawa Hideomi
• Sasagawa Shinya
• Muraoka Taiga

Classifications

• H10P95/70

  Chemical treatments · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/20

  Dry etching; Plasma etching; Reactive-ion etching · CPC title

• G09G3/3677

  suitable for active matrices only · CPC title

• G09G2300/0408

  Integration of the drivers onto the display substrate · CPC title