High frequency power supply device and high frequency power supply method

Patent metadata

Field	Value
Publication number	US-11411541-B2
Application number	US-202016821694-A
Country	US
Kind code	B2
Filing date	Mar 17, 2020
Priority date	Mar 27, 2019
Publication date	Aug 9, 2022
Grant date	Aug 9, 2022

Abstract

A device includes an amplifier for amplifying and supplying a high frequency power supplied to a load, a parameter detector for detecting a parameter of a current, a voltage, or a power from the amplifier to the load, a current supply unit for supplying a driving current for the amplifier, and an output unit for outputting a command signal for changing an amplification degree of the amplifier based on the detected parameter such that the parameter becomes a target value. The device further includes a first abnormality detector for detecting an abnormality by monitoring the command signal, and/or a current detector for detecting the driving current, a current data storage unit storing an upper and a lower limit value of the driving current, and a second abnormality detector for detecting the abnormality based on at least one of the upper limit value or the lower limit value.

First claim

The invention claimed is:

1. A high frequency power supply device comprising:
an amplifier configured to amplify a high frequency supplied from an oscillator and supply a high frequency power therefrom to a load;
a parameter detector configured to detect a parameter of a current, a voltage, or a power supplied from the amplifier to the load;
a current supply unit configured to supply a driving current for driving the amplifier; and
a command signal output unit configured to output a command signal for changing an amplification degree of the amplifier based on the detected parameter and a target value such that the parameter becomes the target value,
wherein the high frequency power supply device further comprises a first abnormality detector configured to detect an abnormality by monitoring the command signal, and/or the high frequency power supply device further comprises a current detector configured to detect the driving current, a current data storage unit configured to store an upper limit value and a lower limit value of the driving current, and a second abnormality detector configured to detect the abnormality based on at least one of the upper limit value or the lower limit value of the driving current.

2. The high frequency power supply device of claim 1 , wherein the high frequency power supply device comprises both of the first abnormality detector and the second abnormality detector.

3. The high frequency power supply device of claim 1 , wherein the amplifier includes a front-stage amplifier and a rear-stage amplifier,
an amplification degree of the front-stage amplifier is changed by the command signal, and
the current detector detects a driving current supplied to the rear-stage amplifier.

4. The high frequency power supply device of claim 2 , wherein the amplifier includes a front-stage amplifier and a rear-stage amplifier,
an amplification degree of the front-stage amplifier is changed by the command signal, and
the current detector detects a driving current supplied to the rear-stage amplifier.

5. The high frequency power supply device of claim 1 , wherein the first abnormality detector detects the abnormality when the command signal corresponding to the amplification degree, which exceeds an upper limit value of a preset amplification degree set based on the target value, is outputted.

6. The high frequency power supply device of claim 2 , wherein the first abnormality detector detects the abnormality when the command signal corresponding to the amplification degree, which exceeds an upper limit value of a preset amplification degree set based on the target value, is outputted.

7. The high frequency power supply device of claim 3 , wherein the first abnormality detector detects the abnormality when the command signal corresponding to the amplification degree, which exceeds an upper limit value of a preset amplification degree set based on the target value, is outputted.

8. The high frequency power supply device of claim 5 , wherein at least one of the upper and the lower limit value of the driving current or the upper limit value of the preset amplification degree is set for each target value for the power supplied.

9. The high frequency power supply device of claim 6 , wherein at least one of the upper and the lower limit value of the driving current or the upper limit value of the preset amplification degree is set for each target value for the power supplied.

10. The high frequency power supply device of claim 7 , wherein at least one of the upper and the lower limit value of the driving current or the upper limit value of the preset amplification degree is set for each target value for the power supplied.

11. A high frequency power supply device of claim 1 , further comprising:
a housing that stores the amplifier;
a temperature sensor configured to detect a temperature in the housing;
a third abnormality detector configured to detect the abnormality based on the detected temperature.

12. A high frequency power supply device of claim 2 , further comprising:
a housing that stores the amplifier;
a temperature sensor configured to detect a temperature in the housing;
a third abnormality detector configured to detect the abnormality based on the detected temperature.

13. A high frequency power supply device of claim 3 , further comprising:
a housing that stores the amplifier;
a temperature sensor configured to detect a temperature in the housing;
a third abnormality detector configured to detect the abnormality based on the detected temperature.

14. A high frequency power supply device of claim 5 , further comprising:
a housing that stores the amplifier;
a temperature sensor configured to detect a temperature in the housing;
a third abnormality detector configured to detect the abnormality based on the detected temperature.

15. A high frequency power supply device of claim 8 , further comprising:
a housing that stores the amplifier;
a temperature sensor configured to detect a temperature in the housing;
a third abnormality detector configured to detect the abnormality based on the detected temperature.

16. The high frequency power supply device of claim 11 , wherein the amplifier is included in a chip of an integrated circuit mounted on a circuit board, and the temperature sensor is disposed on a surface of the chip.

17. The high frequency power supply device of claim 1 , wherein the load is provided in a processing chamber where a semiconductor substrate is stored and processed.

18. A high frequency power supply method comprising:
amplifying a high frequency supplied from an oscillator using an amplifier and supplying amplified high frequency power therefrom to a load;
detecting a parameter of a current, a voltage or a power supplied from the amplifier to the load;
outputting a command signal for changing an amplification degree of the amplifier based on the detected parameter and a target value such that the parameter becomes the target value; and
detecting a driving current for driving the amplifier and detecting an abnormality based on an upper limit value and a lower limit value of the driving current stored in advance in a current data storage unit.

Assignees

• Tokyo Electron Ltd

Inventors

• Inoue Mitsuya
• Ashida Mitsutoshi

Classifications

• H03F1/30 Primary

  Modifications of amplifiers to reduce influence of variations of temperature or supply voltage {or other physical parameters (in differential amplifiers H03F3/45479)} · CPC title

• H03F2200/462

  the current being sensed · CPC title

• H03F3/189

  High-frequency amplifiers, e.g. radio frequency amplifiers · CPC title

• H01J2237/24585

  Other variables, e.g. energy, mass, velocity, time, temperature · CPC title

• H01J37/32174 Primary

  Circuits specially adapted for controlling the RF discharge · CPC title