Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Patent metadata

Field	Value
Publication number	US-11411088-B2
Application number	US-202017026510-A
Country	US
Kind code	B2
Filing date	Sep 21, 2020
Priority date	Nov 16, 2018
Publication date	Aug 9, 2022
Grant date	Aug 9, 2022

Abstract

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

First claim

What is claimed is:

1. A semiconductor device structure comprising:
a silicon germanium (Si 1-x Ge x channel region;
an interface layer comprising an aluminum silicate film disposed directly on the silicon germanium (Si 1-x Ge x channel region; and
a high-k dielectric material disposed directly on the interface layer;
wherein an interface trap density at an interface between the silicon germanium (Si 1-x Ge x ) channel region and the interface layer is less than about 7 e 11 cm −2 eV −1 for mid-gap states.

2. The semiconductor device structure of claim 1 , wherein the silicon germanium (Si 1-x Ge x ) channel region has a germanium content wherein x is between approximately 0 and approximately 0.50.

3. The semiconductor device structure of claim 1 , wherein the aluminum silicate film has an atomic percentage of silicon between approximately 10 atomic-% and approximately 60 atomic-%.

4. The semiconductor device structure of claim 3 , wherein the aluminum silicate film has an atomic percentage of silicon between approximately 10 atomic-% and approximately 30 atomic-%.

5. The semiconductor device structure of claim 1 , wherein the aluminum silicate film has an atomic percentage of silicon less than 10 atomic-%.

6. The semiconductor device structure of claim 1 , wherein the high-k dielectric material comprises a metallic oxide having a dielectric constant greater than approximately 7.

7. The semiconductor device structure of claim 1 , wherein the aluminum silicate film has an effective oxide charge density of less than 5 e 10 cm −2 .

8. The semiconductor device structure of claim 1 , wherein the interface layer has a thickness of less than 1 nanometer.

Assignees

• Asm Ip Holding Bv

Inventors

• Tang Fu
• Hsu Peng-Fu
• Givens Michael Eugene
• Xie Qi

Classifications

• H10P14/6929

  the material containing aluminium, e.g. AlSiOx · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10D64/01332

  Making the insulator · CPC title