Calibration method and terminal equipment of terahertz frequency band on-wafer S parameter

US11385175B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11385175-B2
Application numberUS-202017123823-A
CountryUS
Kind codeB2
Filing dateDec 16, 2020
Priority dateDec 17, 2019
Publication dateJul 12, 2022
Grant dateJul 12, 2022

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Abstract

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A calibration method includes: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; based on the eight error models, determining a first mathematical model according to a first S parameter related to a first calibration piece, the first mathematical model comprising parallel crosstalk terms between probes, and determining a second mathematical model according to a second S parameter related to a second calibration piece, the second mathematical model comprising series crosstalk terms between the probes; determining a third mathematical model according to a third S parameter related to a measured piece; and solving and obtaining a Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model, and acquiring an S parameter of the measured piece according to the Z parameter of the measured piece.

First claim

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What is claimed is: 1. A calibration method of Terahertz frequency band on-wafer S parameter, comprising: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; acquiring a first S parameter based on a first calibration piece on the basis of the eight error models, and determining a first mathematical model according to the first S parameter, the first mathematical model comprising parallel crosstalk terms between probes; acquiring a second S parameter based on a second calibration piece on the basis of the eight error models, and determining a second mathematical model according to the second S parameter, the second mathematical model comprising series crosstalk terms between the probes; acquiring a third S parameter based on a measured piece on the basis of the eight error models, and determining a third mathematical model according to the third S parameter, the third mathematical model comprising a Z parameter of the measured piece; obtaining the Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model; and calibrating an S parameter of the measured piece according to the Z parameter of the measured piece; and wherein acquiring the first S parameter based on the first calibration piece on the basis of the eight error models, and determining the first mathematical model according to the first S parameter comprises: generating a first equivalent circuit model corresponding to the first calibration piece based on the first calibration piece; acquiring the first S parameter of the first calibration piece according to the eight error models; converting the first S parameter into a first Y parameter; and determining the first mathematical model according to the first Y parameter and the first equivalent circuit model, wherein the first mathematical model is represented as Y Total OPN =Y PAD +Y P , Y Total OPN is the first Y parameter, Y PAD is a PAD (pad) parallel parasitic parameter, and Y p is the parallel crosstalk terms between the probes. 2. The calibration method according to claim 1 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 3. The calibration method according to claim 1 , wherein acquiring the second S parameter based on the second calibration piece on the basis of the eight error models, and determining the second mathematical model according to the second S parameter comprises: generating a second equivalent circuit model corresponding to the second calibration piece based on the second calibration piece; acquiring the second S parameter of the second calibration piece obtained by measurement according to the eight error models; converting the second S parameter into a second Y parameter; and determining the second mathematical model according to the second Y parameter and the second equivalent circuit model. 4. The calibration method according to claim 3 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 5. The calibration method according to claim 3 , wherein, the second mathematical model is represented as Y Total SHORT =Y PAD +Y P +(Z S +Z L ) −1 , wherein Y Total SHORT is the second Y parameter, Y PAD is the PAD parallel parasitic parameter, Y P is the parallel crosstalk terms between the probes, Z S is the series crosstalk terms between the probes, and Z L is a series parasitic parameter of a PAD intraconnection. 6. The calibration method according to claim 5 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 7. The calibration method according to claim 1 , wherein acquiring the third S parameter based on the measured piece on the basis of the eight error models, and determining the third mathematical model according to the third S parameter comprises: generating a third equivalent circuit model corresponding to the measured piece based on the measured piece; acquiring the third S parameter of the measured piece obtained by measurement according to the eight error models; converting the third S parameter into a third Y parameter; and determining the third mathematical model according to the third Y parameter and the third equivalent circuit model. 8. The calibration method according to claim 7 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 9. The calibration method according to claim 7 , wherein, the third mathematical model is represented as Y Total DUT =Y P +Y PAD +S+Z L +Z DUT ) −1 , wherein Y Total DUT is the third Y parameter, Y P is the parallel crosstalk terms between the probes, Y PAD is the PAD parallel parasitic parameter, Z S is the series crosstalk terms between the probes, Z L is a series parasitic parameter of a PAD intraconnection, and Z DUT is the Z parameter of the measured piece. 10. The calibration method according to claim 9 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 11. The calibration method according to claim 1 , wherein the first calibration piece is an open-open calibration piece, and the second calibration piece is a short-short calibration piece. 12. A terminal equipment comprising a non-transitory memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, causes the terminal equipment to perform: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; acquiring a first S parameter based on a first calibration piece on the basis of the eight error models, and determining a first mathematical model according to the first S parameter, the first mathematical model comprising parallel crosstalk terms between probes; acquiring a second S parameter based on a second calibration piece on the basis of the eight error models, and determining a second mathematical model according to the second S parameter, the second mathematical model comprising series crosstalk terms between the probes; acquiring a third S parameter based on a measured piece on the basis of the eight error models, and determining a third mathematical model according to the third S parameter, the third mathematical model comprising a Z parameter of the measured piece; obtaining the Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model, and calibrating an S parameter of the measured piece according to the Z parameter of the measured piece; and wherein acquiring the first S parameter based on the first calibration piece on the basis of the eight error models, and determining the first mathematical model according to the first S parameter comprises: generating a first equivalent circuit model corresponding to the first calibration piece based on the first calibration piece; acquiring the first S parameter of the first calibration piece according to the eight error models; converting the first S parameter into a first Y parameter; and determining the first mathematical model according to the first Y parameter and the first equivalent circuit model, wherein the first mathematical model is represented as Y Total OPN =Y PAD +Y p , Y Total OPN is the first Y parameter, Y PAD is a PAD (pad) parallel parasi

Assignees

Inventors

Classifications

  • Dielectric impedance spectroscopy (electrochemical impedance spectroscopy for measuring corrosion G01N17/02) · CPC title

  • related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads · CPC title

  • by Terahertz time domain spectroscopy [THz-TDS] · CPC title

  • for analysing solids; Preparation of samples therefor · CPC title

  • applied to semiconductors, e.g. Silicon · CPC title

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What does patent US11385175B2 cover?
A calibration method includes: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; based on the eight error models, determining a first mathematical model according to a first S parameter related to a first calibration piece, the first mathematical model comprising parallel crosstalk terms between probes, and determining a second mathemati…
Who is the assignee on this patent?
The 13Th Research Institute Of China Electronics Tech Group Corporation
What technology area does this patent fall under?
Primary CPC classification G01N21/3586. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 12 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).