Washing method, washing device, storage medium, and washing composition

Patent metadata

Field	Value
Publication number	US-11355362-B2
Application number	US-201816606660-A
Country	US
Kind code	B2
Filing date	Feb 2, 2018
Priority date	Apr 25, 2017
Publication date	Jun 7, 2022
Grant date	Jun 7, 2022

Abstract

A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

First claim

The invention claimed is:

1. A washing method, comprising:
heating a substrate with a layer to be reacted with a component (A) capable of decomposing the layer, wherein the heating is to a minimum temperature of 10° C. below the boiling point of the component (A) under atmospheric pressure;
reacting the layer to be processed and the component (A) by supplying a vapor of the component (A) to the heated substrate; and
removing the layer to be processed which has reacted with the component (A) from the substrate,
wherein the removing is performed using at least one removal solution selected from the group consisting of a basic mixed solution comprising water and a water-soluble ether and a basic mixed solution comprising dimethylsulfoxide and N-methyl-2-pyrrolidone.

2. The washing method according to claim 1 , wherein the substrate is heated to a temperature higher than a boiling point of the component (A)—10° C.

3. The washing method according to claim 1 , wherein the component (A) is nitric acid.

4. The washing method according to claim 1 , wherein the component (A) is sulfonic acid.

5. The washing method according to claim 4 , wherein the sulfonic acid is a fluorinated alkyl sulfonic acid.

6. The washing method according to claim 5 , wherein the fluorinated alkyl sulfonic acid is one or more selected from the group consisting of trifluoromethanesulfonic acid, pentafluoroethanesulfonic acid, heptafluoropropanesulfonic acid, and nonafluorobutanesulfonic acid.

7. The washing method according to claim 1 , wherein the substrate is heated to a high temperature which is a boiling point under atmospheric pressure of the component (A)—10° C. or higher and lower than the boiling point in the heating, and a temperature of the vapor is the boiling point under atmospheric pressure of the component (A) or higher and 500° C. or lower.

8. The washing method according to claim 1 , wherein the heating is performed under atmospheric pressure, and the supplying in the reacting is performed under atmospheric pressure.

9. A washing method, comprising:
heating a substrate with a layer to be processed to a temperature higher than a boiling point under atmospheric pressure of a component (A) capable of decomposing the layer to be processed,
reacting the layer to be processed and the component (A) by supplying a vapor of the component (A) to the heated substrate, wherein a temperature of the vapor is the boiling point under atmospheric pressure of the component (A) or higher and 500° C. or lower, and removing the layer to be processed which has reacted with the component (A) from the substrate,
wherein the removing is performed using at least one removal solution selected from the group consisting of a basic mixed solution comprising water and a water-soluble ether and a basic mixed solution comprising dimethylsulfoxide and N-methyl-2-pyrrolidone.

10. A washing method, comprising: according to claim 9 ,
heating a substrate with a layer to be processed to a temperature higher than a boiling point under atmospheric pressure of a component (A) capable of decomposing the layer to be processed,
reacting the layer to be processed and the component (A) by supplying a vapor of the component (A) to the heated substrate, wherein the component (A) is trifluoromethanesulfonic acid, and a temperature of the vapor is a boiling point under atmospheric pressure of the component (A) or higher and 200° C. or lower, and removing the layer to be processed which has reacted with the component (A) from the substrate,
wherein the removing is performed using at least one removal solution selected from the group consisting of a basic mixed solution comprising water and a water-soluble ether and a basic mixed solution comprising dimethylsulfoxide and N-methyl-2-pyrrolidone.

11. The washing method according to claim 10 , wherein the heating is performed under atmospheric pressure, and the supplying in the reacting is performed under atmospheric pressure.

12. The washing method according to claim 9 , wherein the component (A) is one or more selected from the group consisting of trifluoromethanesulfonic acid, pentafluoroethanesulfonic acid, heptafluoropropanesulfonic acid, and nonafluorobutanesulfonic acid.

13. The washing method according to claim 9 , wherein the heating is performed under atmospheric pressure, and the supplying in the reacting is performed under atmospheric pressure.

Assignees

• Tokyo Ohka Kogyo Co Ltd
• Tokyo Electron Ltd

Inventors

• Hirano Isao
• Terada Shoichi
• Nakamura Junji
• Toshima Takayuki

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P70/15 Primary

  by wet cleaning only (H10P70/52 takes precedence) · CPC title