Method of depositing material onto a surface and structure formed according to the method

Patent metadata

Field	Value
Publication number	US-11355338-B2
Application number	US-202016867385-A
Country	US
Kind code	B2
Filing date	May 5, 2020
Priority date	May 10, 2019
Publication date	Jun 7, 2022
Grant date	Jun 7, 2022

Abstract

Methods of depositing material on a surface of a substrate are disclosed. The methods include exposing a surface of the substrate to a precursor within a reaction chamber to form adsorbed species on the surface and removing at least a portion of the adsorbed species prior to introducing a reactant to the reaction chamber.

First claim

I claim:

1. A method of depositing material onto a surface of a substrate, the method comprising the steps of:
providing a substrate within a reaction chamber;
providing a flow of a reactant gas comprising a reactant within the reaction chamber;
during the step of providing the flow of the reactant gas, exposing a surface of the substrate to a precursor, wherein the precursor reacts with species on the surface to form adsorbed species;
stopping the flow of the reactant gas to the reaction chamber;
removing a portion of the adsorbed species, leaving residual species on the surface;
resuming the flow of the reactant gas to the reaction chamber; and
forming a plasma within the reaction chamber,
wherein the reactant reacts with the residual species to form the material.

2. The method of claim 1 , wherein the step of removing comprises sputtering.

3. The method of claim 2 , wherein the sputtering comprises using an activated species formed from an inert gas.

4. The method of claim 3 , wherein the inert gas is selected from one or more gases of the group consisting of argon, helium, neon, krypton, and xenon.

5. The method of claim 1 , wherein during the step of removing, a plasma is formed.

6. The method of claim 5 , wherein the plasma is formed using a direct plasma system.

7. The method of claim 5 , wherein the plasma is formed using a remote plasma system.

8. The method of claim 1 , wherein the plasma is formed during at least a portion of the step of resuming the flow of the reactant gas to the reaction chamber.

9. The method of claim 1 , wherein the precursor and the reactant gas are provided to the reaction chamber during at least a portion of a precursor pulse interval.

10. The method of claim 1 , wherein a purge gas is continuously provided to the reaction chamber during the steps of exposing the surface of the substrate to a precursor, removing a portion of the adsorbed species, and providing the reactant gas to the reaction chamber.

11. The method of claim 1 , further comprising a step of purging the precursor from the reaction chamber, wherein the step of purging comprises providing an inert gas and the reactant gas to the reaction chamber.

12. The method of claim 1 , wherein the precursor has a general formula of MpCqNrOsBtXuHv, wherein p, q, r, s, t, u, v are integers including zero, M comprises B, Si, Ti, or Zr, and X comprises F, Cl, Br, or I.

13. The method of claim 1 , wherein the reactant is selected from one or more of the group consisting of O 2 , O 3 , CO 2 , N 2 O, N 2 , NH 3 , H 2 , CH 4 , and other hydrocarbons.

14. A deposition apparatus configured to perform the method of claim 1 .

15. A method of depositing material onto a surface of a substrate, the method comprising the steps of:
providing a substrate within a reaction chamber;
providing a flow of a reactant gas within the reaction chamber;
during the step of providing the flow of the reactant gas, providing a precursor to the reaction chamber for a precursor pulse interval to form adsorbed species on a surface of the substrate;
purging the reaction chamber;
stopping the flow of the reactant gas to the reaction chamber;
removing a portion of the adsorbed species and leaving residual species on the surface;
resuming the flow of the reactant gas for forming activated reactant species to the reaction chamber; and
forming a plasma within the reaction chambers,
wherein the activated reactant species react with the residual species to form the material.

16. The method of claim 15 , wherein the step of removing a portion of the adsorbed species comprises sputtering.

17. The method of claim 16 , wherein a power applied to generate a plasma during the step of sputtering is between about 50 W and about 2000 W.

18. The method of claim 16 , wherein the sputtering comprises using an activated species formed from an inert gas.

19. The method of claim 18 , wherein the inert gas is selected from one or more gases of the group consisting of argon, helium, neon, krypton, and xenon.

20. The method of claim 15 , wherein a temperature within the reaction chamber during the step of removing a portion of the adsorbed species is between about −30° C. and about 650° C.

Assignees

• Asm Ip Holding Bv

Inventors

• Ueda Shinya

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title