Liner assemblies for substrate processing systems

Patent metadata

Field	Value
Publication number	US-11345996-B2
Application number	US-201816235729-A
Country	US
Kind code	B2
Filing date	Dec 28, 2018
Priority date	Feb 11, 2013
Publication date	May 31, 2022
Grant date	May 31, 2022

Abstract

A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

First claim

What is claimed is:

1. A chemical vapor deposition system for processing a substrate, the system comprising:
a processing chamber having a processing volume enclosed therein, the processing chamber including a lower chamber wall and an upper chamber wall;
a first liner disposed between the lower chamber wall and the processing volume, the first liner including a first fluid guide being curved about a circumferential line extending around the first liner; and
a second liner disposed between the upper chamber wall and the processing volume, the second liner including an outer rim, an inner rim, and a second fluid guide extending between the outer rim and the inner rim, the second fluid guide being curved about the circumferential line, wherein the first fluid guide or the second fluid guide is a continuously rounded surface.

2. A chemical vapor deposition system as set forth in claim 1 further comprising a plurality of partition walls extending outwardly from the second fluid guide.

3. A chemical vapor deposition system as set forth in claim 1 further comprising a gas injecting port, the first and second fluid guides defining at least one fluid guiding channel disposed between the gas injecting port and the processing volume.

4. A chemical vapor deposition system as set forth in claim 1 , wherein the second fluid guide has a shape complementary to the first fluid guide.

5. A chemical vapor deposition system as set forth in claim 1 , wherein a first portion of the first fluid guide is concave and a second portion of the first fluid guide is convex.

6. A chemical vapor deposition system as set forth in claim 5 , wherein a first portion of the second fluid guide is concave and a second portion of the second fluid guide is convex.

7. A chemical vapor deposition system as set forth in claim 1 , wherein each partition wall includes a lower surface having a shape complementary to the first fluid guide.

8. A chemical vapor deposition system as set forth in claim 1 further comprising a peripheral channel in fluid communication with the processing volume, the peripheral channel at least partially defined by an upper surface of the first liner, an inner surface of the outer rim, an outer surface of the inner rim, a lower surface of the second liner, and a sidewall extending between the inner rim and the outer rim.

9. A chemical vapor deposition system for processing a substrate, the system comprising:
a processing chamber having a processing volume enclosed therein, the processing chamber including a lower chamber wall and an upper chamber wall;
a first liner disposed between the lower chamber wall and the processing volume, the first liner including an annular body and an outer peripheral surface including a first fluid guide, the first fluid guide including a first portion and a second portion, the first portion has a first portion radius, the second portion has a second portion radius; and
a second liner disposed between the upper chamber wall and the processing volume, the second liner including an annular body, a second fluid guide, and a plurality of partition walls extending outwardly from the second fluid guide, the second fluid guide including a third portion and a fourth portion, the third portion has a third portion radius, the fourth portion has a fourth portion radius, wherein the third portion is opposite the first portion and the fourth portion is opposite the second portion such that a rounded fluid guiding channel is defined between the first fluid guide and the second fluid guide, wherein the first fluid guide and the second fluid guide are continuously rounded.

10. A chemical vapor deposition system as set forth in claim 9 further comprising an inject insert positioned between the lower chamber wall and the upper chamber wall and positioned adjacent the first liner and the second liner, wherein the inject insert is configured to channel a flow of gas to a channel defined by the first fluid guide and the second fluid guide.

11. A chemical vapor deposition system as set forth in claim 10 , wherein the first portion radius is selected such that a surface of the first fluid guide is substantially flush with the inject insert.

12. A chemical vapor deposition system as set forth in claim 10 , wherein the third portion radius is selected such that a surface of the second fluid guide is substantially flush with the inject insert.

13. A chemical vapor deposition system as set forth in claim 9 further comprising a preheat ring positioned within the processing chamber, wherein the preheat ring is configured to heat a flow of gas within the processing chamber.

14. A chemical vapor deposition system as set forth in claim 13 , wherein the fourth portion radius is selected such that a surface of the first fluid guide is substantially flush with a surface of the preheat ring.

15. A chemical vapor deposition system as set forth in claim 9 , wherein the first portion is concave about a circumferential line extending around the first liner and the second portion is convex about the circumferential line.

16. A chemical vapor deposition system as set forth in claim 9 , wherein the third portion is convex about a circumferential line extending around the first liner when the first and second liners are positioned within the processing system and the fourth portion is concave about the circumferential line when the first and second liners are positioned within the processing system.

17. A chemical vapor deposition system as set forth in claim 9 , wherein the first liner and the second liner are made of quartz.

18. A chemical vapor deposition system as set forth in claim 9 , wherein the first liner and the second liner are made of fused quartz manufactured from high-purity silica powder.

19. A chemical vapor deposition system as set forth in claim 9 , wherein the second liner includes between three partition walls and twenty-two partition walls.

20. A chemical vapor deposition system as set forth in claim 9 , wherein the second liner includes twenty-two partition walls.

Assignees

• Globalwafers Co Ltd

Inventors

• Abedijaberi Arash
• Thomas Shawn George

Classifications

• H01J37/3244

  Gas supply means · CPC title

• C23C16/45504 Primary

  Laminar flow · CPC title

• C23C16/45563

  Gas nozzles · CPC title

• H01J37/32477

  characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title