Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

Patent metadata

Field	Value
Publication number	US-11322629-B2
Application number	US-202117145301-A
Country	US
Kind code	B2
Filing date	Jan 9, 2021
Priority date	Aug 25, 2014
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United Sates is:

1. An integrated structure comprising:
a substrate;
an optical isolation region formed in the substrate;
a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first poly silicon material;
an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of a second polysilicon material different from the first polysilicon material and has a top surface coplanar with a top surface of the photonic device.

2. The integrated structure of claim 1 , wherein the gate has a bottom surface coplanar with a bottom surface of the photonic device.

3. The integrated structure of claim 1 , wherein the photonic device is a first photonic device, and further comprising a second photonic device over the substrate, the second photonic device formed of the second polysilicon material, wherein the first photonic device and second photonic device have coplanar upper surfaces, coplanar lower surfaces and different optical properties.

4. The integrated structure of claim 3 , wherein the first and second polysilicon materials have different optical transmission properties.

5. The integrated structure of claim 3 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

6. The integrated structure of claim 3 , wherein the second photonic device comprises a defect state photodetector.

7. The integrated structure of claim 1 , wherein the first polysilicon material comprises an amorphized and recrystallized polysilicon material.

8. The integrated structure of claim 1 , further comprising forming a nitride material over the photonic device.

9. The integrated structure of claim 1 , wherein the photonic device comprises a waveguide core.

10. An integrated structure comprising:
a substrate;
an optical isolation region formed in the substrate;
a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first poly silicon material; and
an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of a second polysilicon material different from the first polysilicon material and has a top surface coplanar with a top surface of the photonic device and a bottom surface coplanar with a bottom surface of the photonic device,
wherein the first polysilicon material has a lower attenuation than the second polysilicon material.

11. The integrated structure of claim 10 , wherein the photonic device is a first photonic device, and further comprising a second photonic device over the substrate, the second photonic device comprising the second polysilicon material.

12. The integrated structure of claim 11 , wherein the first and second photonic devices have different optical transmission properties.

13. The integrated structure of claim 11 , wherein the second photonic device comprises a defect state photodetector.

14. The integrated structure of claim 10 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

15. The integrated structure of claim 10 , wherein the first polysilicon material comprises an amorphized and recrystallized polysilicon material.

16. The integrated structure of claim 10 , further comprising a nitride material over the photonic device.

17. The integrated structure of claim 10 , wherein the photonic device comprises a waveguide core.

Assignees

• Micron Technology Inc
• Massachusetts Inst Technology

Inventors

• Meade Roy
• Mehta Karan
• Megged Efraim
• Orcutt Jason
• Popovic Milos
• Ram Rajeev
• Shainline Jeffrey
• Sternberg Zvi
• Stojanovic Vladimir
• Tehar-Zahav Ofer

Classifications

• H10F77/1642

  including only Group IV materials · CPC title

• H10F71/1221

  comprising polycrystalline silicon · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H10F77/413 Primary

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title