Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

Patent metadata

Field	Value
Publication number	US-10903377-B2
Application number	US-201916384037-A
Country	US
Kind code	B2
Filing date	Apr 15, 2019
Priority date	Aug 25, 2014
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. An integrated structure comprising:
a substrate;
an optical isolation region formed in the substrate;
a first photonic device over the substrate, the first photonic device formed of a first polysilicon material;
a second photonic device over and vertically aligned with the optical isolation region, the second photonic device formed of a second polysilicon material different from the first polysilicon material, wherein the first polysilicon material and second polysilicon material have coplanar upper surfaces, coplanar lower surfaces and different optical properties; and
an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of the first polysilicon material and has a top surface coplanar with a top surface of the first photonic device.

2. The integrated structure of claim 1 , wherein the first and second polysilicon materials have different optical transmission properties.

3. The integrated structure of claim 1 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

4. The integrated structure of claim 1 , wherein the first photonic device comprises a defect state photodetector.

5. The integrated structure of claim 1 , wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

6. The integrated structure of claim 1 , further comprising forming a nitride material over the second photonic device, but not over the first photonic device.

7. The integrated structure of claim 1 , wherein the second photonic device comprises a waveguide core.

8. An integrated structure comprising:
a substrate;
an optical isolation region formed in the substrate;
a first photonic device over the substrate, the first photonic device comprising a first polysilicon material;
a second photonic device over and vertically aligned with the optical isolation region, the second photonic device formed of a second polysilicon material different from the first polysilicon material, wherein the second polysilicon material is formed by implanting a region of the first polysilicon material with silicon to create an amorphous silicon region and annealing the annealing the amorphous silicon region to create the second polysilicon material; and
an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of the first polysilicon material and has a top surface coplanar with a top surface of the first photonic device,
wherein the first polysilicon material and the second polysilicon material have coplanar upper surfaces, coplanar lower surfaces, and different optical properties.

9. The integrated structure of claim 8 , wherein the first and second polysilicon materials have different optical transmission properties.

10. The integrated structure of claim 8 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

11. The integrated structure of claim 8 , wherein the first photonic device comprises a defect state photodetector.

12. The integrated structure of claim 8 , wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

13. The integrated structure of claim 8 , further comprising forming a nitride material over the second photonic device, but not over the first photonic device.

14. The integrated structure of claim 8 , wherein the second photonic device comprises a waveguide core.

Assignees

• Micron Technology Inc
• Massachusetts Inst Technology

Inventors

• Meade Roy
• Mehta Karan
• Megged Efraim
• Orcutt Jason
• Popovic Milos
• Ram Rajeev
• Shainline Jeffrey
• Sternberg Zvi
• Stojanovic Vladimir
• Tehar-Zahav Ofer

Classifications

• H10F77/1642

  including only Group IV materials · CPC title

• H10F71/1221

  comprising polycrystalline silicon · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H10F77/413 Primary

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title