Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

Patent metadata

Field	Value
Publication number	US-10312388-B2
Application number	US-201715679028-A
Country	US
Kind code	B2
Filing date	Aug 16, 2017
Priority date	Aug 25, 2014
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate and optical isolation region;
removing a portion of the first polysilicon material in a region which is over and vertically aligned with the optical isolation region;
forming a second polysilicon material in the region over and vertically aligned with the optical isolation region; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.

2. A method of forming an integrated structure as in claim 1 , wherein the first and second polysilicon materials have different optical transmission properties.

3. A method of forming an integrated structure as in claim 1 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

4. A method of forming an integrated structure as in claim 1 , wherein the first photonic device comprises a defect state photodetector.

5. A method of forming an integrated structure as in claim 1 , wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

6. A method of forming an integrated structure as in claim 1 , further comprising forming a nitride material over the waveguide core, but not over the first photonic device.

7. A method of forming an integrated structure as in claim 1 , wherein forming the second polysilicon material comprises:
forming an amorphous silicon in the first polysilicon material in a region over the optical isolation region; and
annealing the amorphous silicon to convert the amorphous silicon to a polysilicon material.

8. A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate, including over a region above and vertically aligned with an optical isolation region;
implanting the region of the first polysilicon material above and vertically aligned with the optical isolation region with silicon to create an amorphous silicon region;
annealing the implanted region to create a second polysilicon material; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.

Assignees

• Micron Technology Inc
• Massachusetts Inst Technology

Inventors

• Meade Roy
• Mehta Karan
• Megged Efraim
• Orcutt Jason
• Popovic Milos
• Ram Rajeev
• Shainline Jeffrey
• Sternberg Zvi
• Stojanovic Vladimir
• Tehar-Zahav Ofer

Classifications

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/1804

  Electricity · mapped topic

• H01L31/03682

  Electricity · mapped topic

• H01L31/182

  Electricity · mapped topic

• H01L31/02327 Primary

  Electricity · mapped topic