Semiconductor device and method for forming a semiconductor device
US-2019234821-A1 · Aug 1, 2019 · US
Pressure sensor device and method for forming a pressure sensor device
US11313749B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11313749-B2 |
| Application number | US-201716333671-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2017 |
| Priority date | Sep 30, 2016 |
| Publication date | Apr 26, 2022 |
| Grant date | Apr 26, 2022 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.
First claim
Opening claim text (preview).
The invention claimed is: 1. A pressure sensor device comprising: a substrate body; a pressure sensor comprising a membrane; and a cap body comprising at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein a mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body. 2. The pressure sensor device according to claim 1 , wherein the mass of the substrate body amounts to at least 95% of the mass of the cap body and at most 105% of the mass of the cap body. 3. The pressure sensor device according to claim 1 , wherein the pressure sensor comprises a capacitive pressure sensor comprising a cavity below the membrane. 4. The pressure sensor device according to claim 1 , wherein the substrate body comprises at least one vertical, electrically conductive via and/or wherein the pressure sensor device is surface mountable. 5. The pressure sensor device according to claim 1 , wherein the pressure sensor is positioned on top of an integrated circuit. 6. The pressure sensor device according to claim 1 , wherein a top layer covers the pressure sensor on a side of the pressure sensor facing the cap body and the top layer and the cap body are connected via direct bonding. 7. The pressure sensor device according to claim 6 , wherein the top layer comprises at least one electrically conductive wall, which is arranged on top of the pressure sensor, surrounds the opening, and is in direct contact with the pressure sensor and the cap body. 8. The pressure sensor device according to claim 1 , wherein the opening in the cap body is positioned above the pressure sensor in the vertical direction and extends over a total lateral extension of the pressure sensor. 9. The pressure sensor device according to claim 1 , wherein the opening in the cap body is positioned above the pressure sensor in the vertical direction and a lateral extension of the opening is smaller than a lateral extension of the pressure sensor.
Assignees
Inventors
Classifications
Stacking the electronic processing unit and the micromechanical structure · CPC title
Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit · CPC title
Bonding or gluing multiple substrate layers · CPC title
Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title
Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate · CPC title
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Frequently asked questions
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- What does patent US11313749B2 cover?
- In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80…
- Who is the assignee on this patent?
- Sciosense Bv
- What technology area does this patent fall under?
- Primary CPC classification G01L19/145. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 26 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).