Measuring height difference in patterns on semiconductor wafers

Patent metadata

Field	Value
Publication number	US-11301983-B2
Application number	US-202016995077-A
Country	US
Kind code	B2
Filing date	Aug 17, 2020
Priority date	May 18, 2017
Publication date	Apr 12, 2022
Grant date	Apr 12, 2022

Abstract

An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

First claim

What is claimed is:

1. A computer-implemented method comprising:
obtaining a shadow model having a variable expressed as a function of height difference between features of a device at different locations on a semiconductor wafer, wherein the shadow model represents height-dependent shadowing associated with the features;
determining values of one or more parameters of the shadow model from measurement data obtained from images of the features; and
determining, by a computer processor, the height difference between the features using the determined values of the one or more parameters applied to the shadow model.

2. The method of claim 1 , further comprising:
determining coefficients of the one or more parameters of the shadow model by statistical analysis of the measurement data.

3. The method of claim 1 , further comprising:
using a scanning electron microscope (SEM) to obtain the images of the features; and
performing measurements on the images to obtain the measurement data.

4. The method of claim 1 , wherein the features of the device comprise a core trench and a gap trench.

5. The method of claim 4 , wherein the core trench and the gap trench are part of a periodic structure.

6. The method of claim 1 , wherein an additional parameter of the shadow model is a width difference between the features of the device at the different locations on the semiconductor wafer.

7. The method of claim 6 , wherein the variable of the shadow model is expressed as a function of a change in depth of shadow, wherein the change in depth of shadow depends on the height difference as well as width difference between the features of the device.

8. A system comprising:
a memory;
a processing device, operatively coupled with the memory, to:
obtain a shadow model having a variable expressed as a function of height difference between features of a device at different locations on a semiconductor wafer, wherein the shadow model represents height-dependent shadowing associated with the features;

determine values of one or more parameters of the shadow model from measurement data obtained from images of the features; and
determine the height difference between the features using the determined values of the one or more parameters applied to the shadow model.

9. The system of claim 8 , wherein the processing device is further to:
determine coefficients of the one or more parameters of the shadow model by statistical analysis of the measurement data.

10. The system of claim 8 , wherein the processing device is further to:
receive the images of the feature from a scanning electron microscope (SEM); and
perform measurements on the images to obtain the measurement data.

11. The system of claim 8 , wherein the features of the device comprise a core trench and a gap trench.

12. The system of claim 11 , wherein the core trench and the gap trench are part of a periodic structure.

13. The system of claim 8 , wherein an additional parameter of the shadow model is a width difference between the features of the device at the different locations on the semiconductor wafer.

14. The system of claim 13 , wherein the variable of the shadow model is expressed as a function of a change in depth of shadow, wherein the change in depth of shadow depends on the height difference as well as width difference between the features of the device.

15. A non-transitory computer readable medium comprising instructions that, when executed by a computer, cause the computer to perform operations comprising:
obtaining a shadow model having a variable expressed as a function of height difference between features of a device at different locations on a semiconductor wafer, wherein the shadow model represents height-dependent shadowing associated with the features;
determining values of one or more parameters of the shadow model from measurement data obtained from images of the features; and
determining, by a computer processor, the height difference between the features using the determined values of the one or more parameters applied to the shadow model.

16. The non-transitory computer readable medium of claim 15 , the operations further comprising:
determining coefficients of the one or more parameters of the shadow model by statistical analysis of the measurement data.

17. The non-transitory computer readable medium of claim 15 , wherein the features of the device comprise a core trench and a gap trench.

18. The non-transitory computer readable medium of claim 17 , wherein the core trench and the gap trench are part of a periodic structure.

19. The non-transitory computer readable medium of claim 15 , wherein an additional parameter of the shadow model is a width difference between the features of the device at the different locations on the semiconductor wafer.

20. The non-transitory computer readable medium of claim 19 , wherein the variable of the shadow model is expressed as a function of a change in depth of shadow, wherein the change in depth of shadow depends on the height difference as well as width difference between the features of the device.

Assignees

• Applied Materials Israel Ltd

Inventors

• Schwarzband Ishai
• Avniel Yan
• Khristo Sergey
• Baram Mor
• Levi Shimon
• Girmonsky Doron
• Kris Roman

Classifications

• G06T7/0004

  Industrial image inspection · CPC title

• G01B15/025 Primary

  by measuring absorption · CPC title

• G06T7/0006 Primary

  using a design-rule based approach · CPC title

• G06T2207/30148

  Semiconductor; IC; Wafer · CPC title

• G06T7/60

  Analysis of geometric attributes · CPC title