Continuous replenishment crystal growth

Patent metadata

Field	Value
Publication number	US-11248312-B2
Application number	US-201916694226-A
Country	US
Kind code	B2
Filing date	Nov 25, 2019
Priority date	Nov 25, 2019
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

First claim

The invention claimed is:

1. A method of growing a crystal comprising:
providing a growth crucible having a die located therein;
providing a melt crucible thermally isolated from the growth crucible;
melting feedstock material provided within the melt crucible to form a liquid melt; and
transporting the liquid melt from the melt crucible to the growth crucible with at least one capillary conveyor provided in fluid communication with the melt crucible and the growth crucible, and
wherein the at least one capillary conveyor is formed from a pair of plates positioned a distance apart.

2. The method of claim 1 , wherein the die comprises a die opening and one or more capillaries extending from within the growth crucible toward the die opening.

3. The method of claim 2 , further comprising: using capillary action to draw the liquid melt within the growth crucible through the one or more capillaries and out of the die opening; and merging a crystal seed into the liquid melt adjacent to the die opening and then pulling the seed away from the die opening at a rate to grow the crystal.

4. The method of claim 1 , wherein the feedstock material is provided to the melt crucible by a feedstock conveyor in communication with the melt crucible.

5. The method of claim 1 , wherein the melt crucible has a larger volume than the growth crucible.

6. The method of claim 1 , wherein the capillary conveyor is positioned to transport liquid melt from the melt crucible to the growth crucible via capillary action caused by depletion of the liquid melt in the growth crucible as a crystal is grown such that a liquid melt level in the melt crucible is the same as the liquid melt level in the growth crucible.

7. The method of claim 1 , wherein the method includes growing a sapphire crystal.

8. A method of growing a crystal comprising:
providing a growth crucible having a die located therein;
providing a melt crucible thermally isolated from the growth crucible;
melting feedstock material provided within the melt crucible to form a liquid melt; and
transporting the liquid melt from the melt crucible to the growth crucible with at least one capillary conveyor provided in fluid communication with the melt crucible and the growth crucible, and
wherein the at least one capillary conveyor is formed from a pair of metallic plates positioned a distance apart.

9. The method of claim 8 , wherein the pair of metallic plates each have an upside down U-shape with a first leg of the upside down U-shape being positioned within the melt crucible, a second leg of the upside down U-shape being positioned within the growth crucible, and a portion extending between the first leg and the second leg.

10. The method of claim 8 , wherein the feedstock material is provided to the melt crucible by a feedstock conveyor in communication with the melt crucible.

11. The method of claim 8 , wherein the melt crucible has a larger volume than the growth crucible.

12. The method of claim 8 , wherein the capillary conveyor is positioned to transport liquid melt from the melt crucible to the growth crucible via capillary action caused by depletion of the liquid melt in the growth crucible as a crystal is grown such that a liquid melt level in the melt crucible is the same as the liquid melt level in the growth crucible.

13. The method of claim 8 , wherein the method includes growing a sapphire crystal.

14. A method of growing a crystal comprising:
providing a growth crucible having a die located therein;
providing a melt crucible thermally isolated from the growth crucible;
melting feedstock material provided within the melt crucible to form a liquid melt; and
transporting the liquid melt from the melt crucible to the growth crucible with at least one capillary conveyor provided in fluid communication with the melt crucible and the growth crucible,
wherein the at least one capillary conveyer includes a first leg positioned within the melt crucible and a second leg positioned within the growth crucible, and
wherein the transporting of the liquid melt from the melt crucible to the growth crucible includes removing at least some bubbles from the liquid melt by flowing the liquid melt through at least one rotary flow element provided in a path of the liquid melt between the first leg of the least one capillary conveyor and the second leg of the at least one capillary conveyor.

15. The method of claim 14 , wherein the feedstock material is provided to the melt crucible by a feedstock conveyor in communication with the melt crucible.

16. The method of claim 14 , wherein the melt crucible has a larger volume than the growth crucible.

17. The method of claim 14 , wherein the capillary conveyor is positioned to transport liquid melt from the melt crucible to the growth crucible via capillary action caused by depletion of the liquid melt in the growth crucible as a crystal is grown such that a liquid melt level in the melt crucible is the same as the liquid melt level in the growth crucible.

18. The method of claim 14 , wherein the method includes growing a sapphire crystal.

Assignees

• Ii Vi Delaware Inc

Inventors

• Stoddard Nathan

Classifications

• C30B15/002

  Continuous growth · CPC title

• C30B15/10

  Crucibles or containers for supporting the melt · CPC title

• C30B15/34

  Edge-defined film-fed crystal-growth using dies or slits · CPC title

• C30B15/02

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C30B35/005

  Transport systems · CPC title