Switching element, variable resistance memory device, and method of manufacturing the switching element

Patent metadata

Field	Value
Publication number	US-11245073-B2
Application number	US-202016944350-A
Country	US
Kind code	B2
Filing date	Jul 31, 2020
Priority date	Sep 4, 2018
Publication date	Feb 8, 2022
Grant date	Feb 8, 2022

Abstract

A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

First claim

What is claimed is:

1. A switching element comprising:
a lower barrier electrode;
a switching pattern on the lower barrier electrode; and
an upper barrier electrode on the switching pattern,
wherein each of the lower barrier electrode and the upper barrier electrode includes carbon and an inert gas element, and
wherein the lower barrier electrode further includes a larger amount of the inert gas element than the upper barrier electrode.

2. The switching element of claim 1 , wherein the inert gas element includes argon.

3. The switching element of claim 1 , wherein the upper barrier electrode comprises:
a first upper barrier electrode; and
a second upper barrier electrode disposed on the first upper barrier electrode,
wherein the second upper barrier electrode includes a larger amount of the inert gas element than the first upper barrier electrode.

4. The switching element of claim 3 , wherein the first upper barrier electrode further includes carbon, and
wherein the second upper barrier electrode further includes carbon nitride.

5. The switching element of claim 3 , wherein a density of the second upper barrier electrode is greater than a density of the first upper barrier electrode.

6. The switching element of claim 5 , wherein the upper barrier electrode further comprises:
a third upper barrier electrode disposed between the first and second upper barrier electrodes.

7. The switching element of claim 6 , wherein the third upper barrier electrode includes the inert gas element; and the amount of the inert gas element of the third upper barrier electrode is more than the amount of the inert gas element of the first upper barrier electrode and is less than the amount of the inert gas element of the second upper barrier electrode.

8. The switching element of claim 1 , wherein the lower barrier electrode comprises:
a first lower barrier electrode; and
a second lower barrier electrode disposed between the first lower barrier electrode and the switching pattern,
wherein the second lower barrier electrode includes a larger amount of the inert gas element than the first lower barrier electrode.

9. The switching element of claim 8 , wherein the first lower barrier electrode further includes carbon nitride, and
wherein the second lower barrier electrode further includes carbon.

10. The switching element of claim 8 , wherein the lower barrier electrode further comprises:
a third lower barrier electrode disposed between the first and second lower barrier electrodes,
wherein the third lower barrier electrode includes the inert gas element; and the amount of the inert gas element of the third lower barrier electrode is more than the amount of the inert gas element of the first lower barrier electrode and is less than the amount of the inert gas element of the second lower barrier electrode.

11. A switching element comprising:
a lower barrier electrode on a substrate;
a switching pattern on the lower barrier electrode; and
an upper barrier electrode on the switching pattern,
wherein the upper barrier electrode comprises:
a first upper barrier electrode; and
a second upper barrier electrode disposed on the first upper barrier electrode,
wherein the second upper barrier electrode includes a larger amount of an inert gas element than the first upper barrier electrode.

12. The switching element of claim 11 , wherein the first upper barrier electrode further includes carbon, and
wherein the second upper barrier electrode further includes carbon nitride.

13. The switching element of claim 11 , wherein the lower barrier electrode comprises:
a first lower barrier electrode; and
a second lower barrier electrode between the first lower barrier electrode and the switching pattern,
wherein the second lower barrier electrode includes a larger amount of an inert gas element than the first lower barrier electrode.

14. The switching element of claim 13 , wherein the first lower barrier electrode further includes carbon nitride, and
wherein the second lower barrier electrode further includes carbon.

15. The switching element of claim 11 , wherein the upper barrier electrode further comprises: a third upper barrier electrode disposed between the first and second upper barrier electrodes,
wherein the third upper barrier electrode includes the inert gas element; and the amount of the inert gas element of the third upper barrier electrode is more than the amount of the inert gas element of the first upper barrier electrode and is less than the amount of the inert gas element of the second upper barrier electrode.

16. A variable resistance memory device comprising:
a first conductive line extending in a first direction;
a second conductive line extending in a second direction intersecting the first direction;
a variable resistance structure disposed between the first and second conductive lines; and
a switching element disposed between the variable resistance structure and the second conductive line or between the variable resistance structure and the first conductive line,
wherein the switching element comprises:
a lower barrier electrode;
a switching pattern on the lower barrier electrode; and
an upper barrier electrode on the switching pattern,
wherein each of the lower barrier electrode and the upper barrier electrode includes carbon, and
wherein the lower barrier electrode further includes a larger amount of an inert gas element than the upper barrier electrode.

17. The variable resistance memory device of claim 16 , wherein the upper barrier electrode comprises:
a first upper barrier electrode; and
a second upper barrier electrode which is disposed on the first upper barrier electrode and has a density greater than a density of the first upper barrier electrode.

18. The variable resistance memory device of claim 17 , wherein the upper barrier electrode further comprises: a third upper barrier electrode between the first and second upper barrier electrodes.

19. The variable resistance memory device of claim 17 , wherein the second upper barrier electrode includes carbon nitride.

20. The variable resistance memory device of claim 19 , wherein the second conductive line comprises:
a line metal pattern; and
a barrier pattern disposed between the line metal pattern and the second upper barrier electrode and including a metal nitride.

Assignees

• Samsung Electronics Co Ltd

Inventors

• YU Seung-Geun
• Wu Zhu
• Lee Ja Bin
• Lee Jung Moo
• Lee Jinwoo
• Jung Kyubong

Classifications

• H01L45/1233 Primary

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic

• H01L45/126

  Electricity · mapped topic

• H01L27/2481

  Electricity · mapped topic

• H01L27/2409

  Electricity · mapped topic