Structures including metal carbide material, devices including the structures, and methods of forming same

Patent metadata

Field	Value
Publication number	US-11242598-B2
Application number	US-201916563473-A
Country	US
Kind code	B2
Filing date	Sep 6, 2019
Priority date	Jun 26, 2015
Publication date	Feb 8, 2022
Grant date	Feb 8, 2022

Abstract

Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

First claim

We claim:

1. A thin-film structure comprising:
a substrate;
a first metal carbide material formed using a first process overlying the substrate; and
a second metal carbide material formed using a second process overlying the first metal carbide material,
wherein one of the first metal carbide material and the second metal carbide material comprises crystallites embedded within an amorphous film, and
wherein the other of the first metal carbide material and the second metal carbide material has a lower resistivity than the first metal carbide material or the second metal carbide material that comprises the crystallites embedded within the amorphous film.

2. The thin-film structure of claim 1 , wherein the other of the first metal carbide material and the second metal carbide material exhibits a greater leakage current than the first metal carbide material or the second metal carbide material that comprises the crystallites embedded within the amorphous film.

3. The thin-film structure of claim 1 , further comprising a dielectric layer disposed between the substrate and the first metal carbide material, the dielectric layer comprising one or more of zirconium dioxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), scandium oxide (Sc 2 O 3 ), lanthanideoxides and mixtures thereof, silicates, YSZ (yttria-stabilized zirconia), barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT) and bismuth tantalate (BT).

4. The thin-film structure of claim 1 , further comprising a dielectric layer disposed between the substrate and the first metal carbide material, the dielctric layer comprising one or more of scandium oxide (Sc 2 O 3 ), lanthanideoxides and mixtures thereof, silicates YSZ (yttria-stabilized zirconia), barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT) and bismuth tantalate (BT).

5. The thin-film structure of claim 1 , further comprising a dielectric layer disposed between the substrate and the first metal carbide material, the dielectric layer comprising two or more of scandium oxide (Sc 2 O 3 ), lanthanideoxides and mixtures thereof, silicates, YSZ (yttria-stabilized zirconia), barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT) and bismuth tantalate (BT).

6. The thin-film structure of claim 1 , further comprising a third metal carbide material formed overlying the second metal carbide material,
wherein the adjacent layers of metal carbide material comprise different material compositions.

7. The thin-film structure of claim 6 , wherein additional metal carbide materials are formed overlying the third metal carbide material.

8. The thin-film structure of claim 6 , wherein the first metal carbide material includes a first transition metal, carbon and aluminum,
wherein the second metal carbide material includes a second transition metal, carbon and aluminum, and
wherein the third metal carbide material includes the first transition metal, carbon and aluminum.

9. The thin-film structure of claim 8 , wherein the second transition metal comprises niobium (Nb).

10. The thin-film structure of claim 9 , wherein two or more of the first metal carbide material, the second metal carbide material and the third metal carbide material are mixed together.

Assignees

• Asm Ip Holding Bv

Inventors

• Raisanen Petri
• Givens Michael
• Shero Eric James

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D62/8162

  having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation · CPC title

• H10D64/691 Primary

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D64/66

  Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes · CPC title