Vertical-type memory device

Patent metadata

Field	Value
Publication number	US-11239249-B2
Application number	US-201916533193-A
Country	US
Kind code	B2
Filing date	Aug 6, 2019
Priority date	Dec 21, 2018
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A vertical-type memory device includes: a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate; first channel structures penetrating through the first gate structure and being in contact with the substrate; a second gate structure including second gate electrodes spaced apart from each other and stacked on the first gate structure; and second channel structures penetrating through the second gate structure and being in contact with the first channel structures. The first channel structures each may include a first channel layer penetrating the first gate structure, and a first channel pad disposed on the first channel layer and including a first pad region including n-type impurities and a second pad region including p-type impurities.

First claim

What is claimed is:

1. A vertical-type memory device comprising:
a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate;
first channel structures each formed in a first channel hole, penetrating through the first gate structure and being in contact with the substrate;
a second gate structure including second gate electrodes spaced apart from each other and stacked on the first gate structure; and
second channel structures each formed in a second channel hole, penetrating through the second gate structure and being in contact with the first channel structures,
wherein the first channel structures each includes a first channel layer penetrating the first gate structure, and a first channel pad formed in the first channel hole, disposed on the first channel layer and including a first pad region including n-type impurities and a second pad region including p-type impurities.

2. The vertical-type memory device of claim 1 , wherein the second channel structures each includes a second channel layer penetrating the second gate structure, and a second channel pad disposed on the second channel layer and including n-type impurities.

3. The vertical-type memory device of claim 2 , wherein the second channel layer is in contact with the first pad region and the second pad region.

4. The vertical-type memory device of claim 1 , wherein a size of the first pad region and a size of the second pad region are different from each other.

5. The vertical-type memory device of claim 1 , further comprising:
a diffusion barrier layer disposed between the first pad region and the second pad region.

6. The vertical-type memory device of claim 5 , wherein the diffusion barrier layer includes silicon nitride.

7. The vertical-type memory device of claim 1 , wherein the first pad regions and the second pad regions of the first channel structures disposed in a first direction parallel to an upper surface of the substrate are alternately disposed in the first direction.

8. The vertical-type memory device of claim 7 , wherein the first pad regions and the second pad regions of the first channel structures disposed in a second direction parallel to the upper surface of the substrate and intersecting the first direction are disposed in different straight lines in the second direction.

9. The vertical-type memory device of claim 1 , further comprising:
a third gate structure including third gate electrodes spaced apart from each other and stacked on the second gate structure; and
third channel structures penetrating through the third gate structure and being in contact with the second channel structures.

10. The vertical-type memory device of claim 9 , wherein the second channel structures each includes a second channel layer penetrating the second gate structure, and a second channel pad disposed on the second channel layer and including a first pad region including n-type impurities and a second pad region including p-type impurities.

11. The vertical-type memory device of claim 10 , wherein the third channel structures each includes a third channel layer penetrating the third gate structure, and a third channel pad disposed on the third channel layer and including n-type impurities.

12. The vertical-type memory device of claim 1 , further comprising:
a base substrate disposed below the substrate; and
transistors disposed on the base substrate and included in a peripheral circuit.

13. A vertical-type memory device comprising:
a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate, and a semiconductor layer disposed on the first gate electrodes;
a second gate structure including second gate electrodes spaced apart from each other and stacked on the first gate structure; and
channel structures penetrating through the first gate structure and the second gate structure and being in contact with the substrate,
wherein the semiconductor layer includes first semiconductor regions and second semiconductor regions extending in a first direction parallel to an upper surface of the substrate and alternately disposed in a second direction intersecting the first direction,
wherein the first semiconductor regions are doped with impurities having a conductivity type different from that of impurities doped in the second semiconductor regions, and
wherein each of the channel structures penetrates through the semiconductor layer with one side surface being in contact with one of the first semiconductor regions, and an other side surface being in contact with one of the second semiconductor regions.

14. The vertical-type memory device of claim 13 ,
wherein the first semiconductor regions include n-type impurities, and the second semiconductor regions include p-type impurities.

15. The vertical-type memory device of claim 14 , further comprising:
a separation region penetrating through the first and second gate structures and extending in the first direction,
wherein one of the first semiconductor regions is disposed on one side of the separation region, and one of the second semiconductor regions is disposed on the other side of the separation region.

16. The vertical-type memory device of claim 13 ,
wherein the channel structures each includes a channel layer penetrating the first gate structure and the second gate structure, and a gate dielectric layer surrounding the channel layer, and
wherein the channel layer and the gate dielectric layer each has a bent portion bent in a horizontal direction on a boundary between the first gate structure and the second gate structure.

17. A vertical-type memory device comprising:
a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate, and a semiconductor layer disposed on the first gate electrodes;
a first channel structure penetrating through the first gate structure and being in contact with the substrate;
a second gate structure including second gate electrodes spaced apart from each other and stacked on the first gate structure; and
a second channel structure penetrating through the second gate structure and being in contact with the first channel structure,
wherein the first gate structure includes a first channel layer penetrating the first gate structure, and an insulating layer positioned at a level the same as a level of the semiconductor layer, and locally disposed on an internal side surface of the first channel layer,
wherein the insulating layer is spaced apart from the second channel structure, and
wherein the first channel structure includes a channel pad covering the insulating layer and the first channel layer.

18. The vertical-type memory device of claim 17 , wherein the insulating layer is formed of aluminum oxide.

19. The vertical-type memory device of claim 17 ,
wherein the second channel structure includes a second channel layer penetrating the second gate structure, and
wherein the second channel layer is connected to the first channel layer by the channel pad.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Kyung Hwan
• Kim Yong Seok
• Lim Jun Hee
• Kanamori Kohji

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10W90/00

  Package configurations · CPC title

• H01L27/11526

  Electricity · mapped topic

• H01L21/31144

  Electricity · mapped topic