Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment

Patent metadata

Field	Value
Publication number	US-11225714-B2
Application number	US-201916669516-A
Country	US
Kind code	B2
Filing date	Oct 31, 2019
Priority date	Sep 11, 2017
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

First claim

What is claimed is:

1. A method, comprising:
depositing a liner in a feature of a substrate, wherein the feature defines an interconnect to an underlying conductor, wherein a portion of the liner contacts the underlying conductor;
depositing a monolayer of an electronegative element over the liner by an underpotential deposition process, the underpotential deposition process including deposition from a plating solution at a potential that is less negative than an equilibrium potential for reduction of the electronegative element and enables monolayer adsorption of the electronegative element on the liner while avoiding electroplating of the electronegative element from the plating solution;
after depositing the monolayer, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the electronegative element to an interface of the liner and a dielectric layer of the substrate, the migration of the electronegative element producing an adhesive barrier at the interface that improves adhesion between the liner and the dielectric layer of the substrate;
repeating the operations of depositing the monolayer of the electronegative element and performing the thermal treatment until a predefined number of cycles is reached.

2. The method of claim 1 , wherein the thermal treatment is defined by annealing at a temperature of approximately 100 to 400 C.

3. The method of claim 1 , wherein the predefined number of cycles is approximately 3 to 10 cycles.

4. The method of claim 1 , wherein the thermal treatment causes bonding of at least a portion of the electronegative element to oxygen at the interface to form the adhesive barrier.

5. The method of claim 1 , wherein the migration of the electronegative element causes at least a portion of the electronegative element to fill grain boundaries of the liner that are along the interface.

6. The method of claim 1 , wherein the feature does not include an adhesive layer prior to the deposition of the liner.

7. The method of claim 1 , further comprising:
after the predefined number of cycles is reached, depositing a conductive material over the liner to fill the feature of the substrate.

8. The method of claim 7 , wherein the conductive material includes copper, cobalt, or ruthenium.

9. A method, comprising:
depositing a liner in a feature of a substrate;
depositing a monolayer of zinc over the liner;
after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate;
repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

10. The method of claim 9 , wherein depositing the monolayer of zinc is performed by an underpotential deposition process, the underpotential deposition process including deposition from a plating solution at a potential that avoids electroplating from the plating solution.

11. The method of claim 9 , wherein depositing the monolayer of zinc is performed by an electroless underpotential deposition process.

12. The method of claim 9 , wherein the thermal treatment is defined by annealing at a temperature of approximately 100 to 400 C.

13. The method of claim 9 , wherein the predefined number of cycles is approximately 3 to 10 cycles.

14. The method of claim 9 , wherein the thermal treatment causes bonding of at least a portion of the zinc to oxygen at the interface to form the adhesive barrier.

15. The method of claim 9 , wherein the migration of the zinc causes at least a portion of the zinc to fill grain boundaries of the liner that are along the interface.

16. The method of claim 9 , wherein the feature does not include an adhesive layer prior to the deposition of the liner.

17. The method of claim 9 , wherein the feature defines an interconnect to an underlying conductor, wherein a portion of the liner contacts the underlying conductor.

18. The method of claim 9 , further comprising:
after the predefined number of cycles is reached, depositing a conductive material over the liner to fill the feature of the substrate.

19. The method of claim 18 , wherein the conductive material includes copper, cobalt, or ruthenium.

Assignees

• Lam Res Corp

Inventors

• Venkatraman Kailash
• Dordi Yezdi
• Joi Aniruddha

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10W20/042

  the barrier, adhesion or liner layers being seed or nucleation layers · CPC title