Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide

Patent metadata

Field	Value
Publication number	US-11211505-B2
Application number	US-201715837971-A
Country	US
Kind code	B2
Filing date	Dec 11, 2017
Priority date	Mar 26, 2013
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm−2 can be obtained, despite having a low average zinc concentration of 5×1017 cm−3 to 3×1018 cm−3, at which a crystal hardening effect does not manifest.

First claim

The invention claimed is:

1. A method for producing a monocrystalline wafer of indium phosphide containing zinc as an impurity, the method comprising:
placing a raw material and an encapsulant in a heat-resistant pot;
heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above;
controlling the temperature in the pot by using a heater disposed around the pot toward the side of the pot and covering an upper portion of the pot with a heat shielding plate to prevent a heat radiation from the melt such that the temperature of the upper portion of the encapsulant is lower than the temperature of the lower portion of the encapsulant and that the temperatures in the encapsulant have a gradient in a vertical direction in a range of about 85 to 130° C./cm;
dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal of an ingot from the seed crystal in a cylindrical shape having a diameter of two inches or more; and
slicing the ingot to produce a wafer,
wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a “Rs/Rc” ratio of the rotational rate of the seed crystal “Rs” to the rotational rate of the pot “Rc” ranges from 1.10 to 1.26, so that the monocrystalline wafer of indium phosphide having a mean zinc concentration of from 9.22×10 17 cm −3 to 2.4×10 18 cm −3 , a mean dislocation density of 1000 cm′ or less and a solidification rate from 0.25-0.88 is produced.

2. The method for producing a monocrystalline wafer of indium phosphide according to claim 1 , wherein the rotational rate of the pot ranges from 5 rpm to 35 rpm.

3. The method for producing a monocrystalline wafer of indium phosphide according to claim 1 , wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal.

4. The method for producing a monocrystalline wafer of indium phosphide according to claim 1 , wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Noda Akira
• Ota Masaru
• Hirano Ryuichi

Classifications

• C30B15/22 Primary

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• H10F71/127

  The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title

• H10F10/163

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title

• H10F77/1243 Primary

  characterised by the dopants · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title