Magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-10109788-B2
Application number	US-201615559195-A
Country	US
Kind code	B2
Filing date	Mar 28, 2016
Priority date	Mar 31, 2015
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

First claim

What is claimed is:

1. A magnetoresistance effect element comprising:
a first ferromagnetic metal layer;
a second ferromagnetic metal layer; and
a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers,
wherein the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine,
wherein the tunnel barrier layer has a lattice-matched portion that is lattice-matched with both of the first ferromagnetic metal layer and the second ferromagnetic metal layer, and
wherein a volume ratio of the lattice-matched portion with respect to a volume of the entire tunnel barrier layer is 65% to 95%.

2. The magnetoresistance effect element according to claim 1 ,
wherein the tunnel barrier layer has a lattice-mismatched portion that is not lattice-matched with at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer.

3. The magnetoresistance effect element according to claim 1 ,
wherein the divalent cation of a non-magnetic element is any one selected from the group consisting of magnesium, zinc, and cadmium.

4. The magnetoresistance effect element according to claim 1 ,
wherein the divalent cation of a non-magnetic element includes more than one element selected from the group consisting of magnesium, zinc, and cadmium.

5. The magnetoresistance effect element according to claim 1 ,
wherein the trivalent cation of a non-magnetic element is any one selected from the group consisting of aluminum, gallium, and indium.

6. The magnetoresistance effect element according to claim 1 ,
wherein the trivalent cation of a non-magnetic element is composed of more than one element selected from the group consisting of aluminum, gallium, and indium.

7. The magnetoresistance effect element according to claim 1 ,
wherein the amount of the divalent cation of a non-magnetic element is smaller than half the amount of the trivalent cation of a non-magnetic element in the tunnel barrier layer.

8. The magnetoresistance effect element according to claim 1 ,
wherein the amount of nitrogen or fluorine contained in the tunnel barrier layer is 5.2% or less of an anion amount of the tunnel barrier layer.

9. The magnetoresistance effect element according to claim 1 ,
wherein a lattice constant of the tunnel barrier layer is 7.861 Å to 8.936 Å.

10. The magnetoresistance effect element according to claim 1 ,
wherein the first ferromagnetic metal layer has larger coercivity than the second ferromagnetic metal layer.

11. The magnetoresistance effect element according to claim 1 ,
wherein at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer has magnetic anisotropy perpendicular to a stacking direction.

12. The magnetoresistance effect element according to claim 1 ,
wherein at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer is Co 2 Mn 1-a Fe a Al b Si 1-b (0≤a≤1, 0≤b≤1).

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• Shibata Tatsuo
• Nakada Katsuyuki
• Tanaka Yoshitomo

Classifications

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11B5/39

  using magneto-resistive devices {or effects} · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/08 Primary

  Electricity · mapped topic