Test structure design for metrology measurements in patterned samples

Patent metadata

Field	Value
Publication number	US-11143601-B2
Application number	US-201916558212-A
Country	US
Kind code	B2
Filing date	Sep 2, 2019
Priority date	Jun 19, 2014
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

First claim

What is claimed is:

1. A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, wherein parameters of the main pattern features are to be controlled during metrology measurements, wherein the auxiliary features of the auxiliary pattern are configured and arranged with respect to the main pattern such that data indicative of optical response from the test structure satisfies a condition of symmetry around a measurement plane being parallel to the symmetry plane of the main pattern, if and when at least one parameter of the main pattern being controlled is maintained within the test structure, and does not satisfy said condition of symmetry around said measurement plane if and when said at least one parameter varies within the test structure.

2. The test structure according to claim 1 , wherein said data indicative of the optical response comprises a relation between first and second measured data pieces corresponding to first and second measurements taken at different measurement conditions.

3. The test structure according to claim 2 , wherein said relation is a difference between the first and second measured data pieces.

4. The test structure according to claim 2 , wherein said different measurement conditions are characterized by different polarizations of light collected from the structure.

5. A method for use in metrology measurements of patterned samples, the method comprising:
associating the patterned sample being measured with a corresponding test structure configured according to claim 1 ;
performing at least one measurement session on said test structure using a measurement plane parallel to the symmetry plane of the main pattern in the test structure, the measurement session comprising at least first and second measurements, each directing illuminating light onto said test structure along an illumination channel and collecting light reflected from said test structure propagating along a collection channel to be detected, such that detected light has a polarization state different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement, thereby generating at least first and second measured data pieces for said at least first and second measurements on the same test structure corresponding to the detected light having different first and second polarization states; and
determining a relation between said at least first and second measured data pieces indicative of parameters of said main features in the main pattern.

6. A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, wherein parameters of the main pattern features are to be controlled during metrology measurements, wherein the test pattern comprises the main pattern comprising at least one unit cell, the unit cell comprising three lines with two respective spacings between them, and the auxiliary pattern associated with the at least one unit cell and comprising two vias located in and extending across said two spacings, respectively, thereby enabling control of widths of the spacings by optical measurements using a measurement plane parallel to the symmetry plane of the main pattern which is parallel to the pattern axis.

7. The test structure according to claim 6 , wherein said two vias are located at opposite sides of the line between said two spacings, and at opposite ends of said line.

8. A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, wherein parameters of the main pattern features are to be controlled during metrology measurements, wherein the test pattern comprises the main pattern comprising at least one pair of locally adjacent unit cell, the unit cell comprising two spaced lines, and the auxiliary pattern associated with one unit cell of the pair and comprising two vias located in and extending across said two spacings, respectively, thereby enabling control of widths of the spacings, by optical measurements using a measurement plane parallel to the symmetry plane of the main pattern which is perpendicular to the pattern axis.

Assignees

• Nova Ltd

Inventors

• Barak Gilad
• Cohen Oded
• Turovets Igor

Classifications

• H10P74/27

  Structural arrangements therefor · CPC title

• G01N21/956 Primary

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• G03F7/70616

  Monitoring the printed patterns · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N21/95607 Primary

  using a comparative method · CPC title