Method and apparatus to determine a patterning process parameter using an asymmetric optical characteristic distribution portion

Patent metadata

Field	Value
Publication number	US-10453758-B2
Application number	US-201715445522-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Mar 1, 2016
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

First claim

The invention claimed is:

1. A method of determining a parameter of a patterning process, the method comprising:
obtaining a representation of radiation, redirected by a structure having geometric symmetry at a nominal physical configuration, detected by an optical measurement machine with respect to a pupil of the optical measurement machine, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure and the detected representation of the radiation comprises a symmetric optical characteristic distribution portion and an asymmetric optical characteristic distribution portion; and
determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from the asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than that of another portion of the detected radiation representation, the asymmetric optical characteristic distribution portion arising from a different physical configuration of the structure than the nominal physical configuration.

2. The method of claim 1 , wherein the patterning process parameter is overlay and the different physical configuration is a shift of at least part of the structure relative another part of the structure.

3. The method of claim 1 , wherein the detected radiation was primarily zeroth order radiation.

4. The method of claim 1 , wherein the detected radiation representation is processed to subtract optical characteristic values across an axis of symmetry so as to reduce or eliminate the optical characteristic values of the symmetric optical characteristic distribution portion of the detected radiation representation.

5. The method of claim 1 , wherein the value of the patterning process parameter is determined using a summation for a plurality of pixels of the detected radiation representation of an optical characteristic value for each pixel multiplied by an associated weighting for that pixel.

6. The method of claim 1 , wherein the optical characteristic is intensity and/or phase.

7. The method of claim 1 , wherein the structure is a device structure.

8. The method of claim 1 , wherein the structure is a non-device structure within a substrate die comprising a device structure.

9. The method of claim 1 , wherein the weighting is configured to cause a first type of the patterning process parameter to be determined for the different physical configuration separately from a second type of the patterning process parameter that is also obtainable from the same optical characteristic values, wherein the first type of patterning process parameter is in a different direction than the second type of patterning process parameter or between a different combination of parts of a unit cell of the structure than the second type of patterning process parameter.

10. The method of claim 9 , further comprising a weighting configured to cause the second type of the patterning process parameter to be determined for the different physical configuration.

11. A computer program product comprising a computer non-transitory computer-readable medium having instructions recorded thereon, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain a representation of radiation, redirected by a structure having geometric symmetry at a nominal physical configuration, detected by an optical measurement machine with respect to a pupil of the optical measurement machine, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure and the detected representation of the radiation comprises a symmetric optical characteristic distribution portion and an asymmetric optical characteristic distribution portion; and
determine a value of the patterning process parameter based on optical characteristic values from the asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than that of another portion of the detected radiation representation, the asymmetric optical characteristic distribution portion arising from a different physical configuration of the structure than the nominal physical configuration.

12. The computer program product of claim 11 , wherein the patterning process parameter is overlay and the different physical configuration is a shift of at least part of the structure relative another part of the structure.

13. The computer program product of claim 11 , wherein the detected radiation was primarily zeroth order radiation.

14. The computer program product of claim 11 , wherein the instructions are further configured to process the detected radiation representation to subtract optical characteristic values across an axis of symmetry so as to reduce or eliminate optical characteristic values of the symmetric optical characteristic distribution portion of the detected radiation representation.

15. The computer program product of claim 11 , wherein the instructions configured to determine the value of the patterning process parameter are further configured to use a summation for a plurality of pixels of the detected radiation representation of an optical characteristic value for each pixel multiplied by an associated weighting for that pixel.

16. The computer program product of claim 11 , wherein the structure is a device structure or is a non-device structure within a substrate die comprising a device structure.

17. The computer program product of claim 11 , wherein the weighting is configured to cause a first type of the patterning process parameter to be determined for the different physical configuration separately from a second type of the patterning process parameter that is also obtainable from the same optical characteristic values, wherein the first type of patterning process parameter is in a different direction than the second type of patterning process parameter or between a different combination of parts of a unit cell of the structure than the second type of patterning process parameter.

18. A metrology apparatus for measuring an object of a patterning process, the metrology apparatus comprising the computer program product of claim 11 .

19. A method of determining a patterning process parameter of a patterning process, the method comprising:
obtaining a representation of radiation, redirected by a structure having geometric symmetry at a nominal physical configuration, detected by an optical measurement machine, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure and the detected representation of the radiation comprises a symmetric optical characteristic distribution portion and an asymmetric optical characteristic distribution portion; and
determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from the asymmetric optical characteristic distribution portion of the detected radiation representation with different weight than that of another portion of the detected radiation representation, wherein the asymmetric optical characteristic distribution portion arises from a different physical configuration of the structure than the nominal physical configuration a

Assignees

• Asml Netherlands Bv

Inventors

• Van Leest Adriaan Johan
• Tsiatmas Anagnostis
• Hinnen Paul Christiaan
• Mcnamara Elliott Gerard
• Verma Alok
• Theeuwes Thomas
• Cramer Hugo Augustinus Joseph

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G03F7/70683

  Mark designs · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title