Film forming method, storage medium, and film forming system

Patent metadata

Field	Value
Publication number	US-11141758-B2
Application number	US-201815997788-A
Country	US
Kind code	B2
Filing date	Jun 5, 2018
Priority date	Jun 19, 2017
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

First claim

What is claimed is:

1. A film forming method for forming a resist film by applying a resist solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, the film forming method comprising:
providing a substrate having projections and recesses;
applying the resist solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the resist film, wherein the projections and recesses of the thick film are arranged to correspond to the projections and recesses on the surface of the substrate before formation of the thick film, wherein a depth of projections and recesses on the surface of the thick film is smaller than the depth of projections and recesses on the surface of the substrate to be formed with the resist film; and subsequently
after modifying the surface of the thick film into a state of being soluble, removing the soluble surface of the thick film to form the resist film having the target film thickness.

2. The film forming method according to claim 1 ,
wherein the film thickness of the thick film is equal to or more than 1.5 times the target film thickness of the resist film.

3. The film forming method according to claim 2 ,
wherein the film thickness of the thick film is equal to or more than 1.8 times the target film thickness of the resist film.

4. The film forming method according to claim 1 , wherein an aspect ratio of the projections and recesses on the substrate to be formed with the resist film is a ratio of a depth of a recessed portion of the projections and recesses to a width of the recessed portion and is 0.0002 to 0.8, and a depth of the recessed portion is 1 to 8 μm.

5. The film forming method according to claim 1 , wherein the removing the surface of the thick film includes applying an acid to the surface of the thick film or irradiating the surface of the thick film with an ultraviolet ray to modify the surface of the thick film, and thereafter developing the thick film to remove the surface of the thick film and form the resist film having the target film thickness.

Assignees

• Tokyo Electron Ltd

Inventors

• Yoshihara Kentaro
• Yoshida Yuichi
• Shibata Naoki
• Yoshihara Kousuke

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P76/20 Primary

  of masks comprising organic materials · CPC title

• H10K77/00

  Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80 · CPC title