Cleaning solution production systems and methods, and plasma reaction tanks

Patent metadata

Field	Value
Publication number	US-11107705-B2
Application number	US-201916505488-A
Country	US
Kind code	B2
Filing date	Jul 8, 2019
Priority date	Jul 30, 2018
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

First claim

What is claimed is:

1. A cleaning solution production system for cleaning a semiconductor substrate, comprising:
a pressure tank;
a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid;
a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank; and
a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

2. The system of claim 1 , further comprising:
a sensor for sensing a concentration of the radical species in the cleaning solution; and
a first valve which is responsive to the concentration sensed by the sensor to selectively apply the cleaning solution to the semiconductor substrate via the nozzle.

3. The system of claim 2 , further comprising a second valve which is responsive to the concentration sensed by the sensor to selectively transfer the cleaning solution to the pressure tank for recirculation through the system.

4. The system of claim 3 , further comprising a circulation pump operatively connected between the second valve and the pressure tank.

5. The system of claim 1 , further comprising a bubble formation device interposed between the pressure tank and the plasma reaction tank.

6. The system of claim 5 , wherein the bubble formation device is a plate including a plurality of orifices.

7. The system of claim 1 , wherein the plasma reaction tank includes first and second electrodes located at opposite sides of the plasma reaction tank.

8. The system of claim 7 , wherein the first and second electrodes are shielded to prevent any contact with the decompressed liquid within the plasma reaction tank.

9. The system of claim 7 , further comprising an ignition electrode located below and radially between the first and second electrodes.

10. The system of claim 9 , wherein, in a first plasma formation stage, a power source is initially applied to the ignition electrode to form plasma in a first region of the plasma reaction tank, and
in a second plasma formation stage subsequent the first plasma formation stage, the power source is applied to the second electrode to form plasma in a second region of the plasma reaction tank.

11. The system of claim 9 , wherein the ignition electrode is shielded to prevent any contact with the decompressed liquid within the plasma reaction tank.

12. The system of claim 9 , wherein the ignition electrode is an elongate electrode having a T-shaped cross-section.

13. The system of claim 7 , further comprising first and second ignition electrodes located below and radially between the first and second electrodes.

14. The system of claim 13 , wherein, in a first plasma formation stage, a power source is applied to the first ignition electrode to form plasma in a first sub-region of the plasma reaction tank,
in a second plasma formation stage subsequent the first plasma formation stage, the power source is applied to the second ignition electrode to form plasma in a second sub-region of the plasma reaction tank, and
in a third plasma formation stage subsequent to the second plasma formation stage, the power source is applied to the second electrode to form plasma in a second region of the plasma reaction tank.

15. The system of claim 1 , further comprising a gas inlet configured to supply a gas into the pressure tank, and a liquid inlet configured to supply a liquid into the pressure tank.

16. The system of claim 15 , wherein the gas includes at least one of O 2 , H 2 , N 2 , NF 3 , CxFy, F 2 , Cl 2 , Br 2 , He, and Ar, where x and y are positive integers.

17. The system of claim 15 , wherein the liquid includes water.

18. The system of claim 17 , wherein the gas includes O 2 , and the radical species includes at least one of OH, O, O 2 , O 3 , HO 2 , H 3 O, and H.

19. The system of claim 17 , wherein the radical species includes at least one of NO, NO 2 , NO 3 , CO 2 , CO 3 , Cl, F, Br, BrO, Cl, ClO, and HF 2 .

20. The system of claim 1 , further comprising a plasma monitoring device configured to monitor a generation of radical species in the decompressed liquid of the plasma reaction tank.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoo Beom Jin
• Kim Min Hyoung
• Nam Sang Ki
• Jang Won Hyuk
• Han Kyu Hee
• Kim Young Do
• Bang Jeong Min

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title