Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device

Patent metadata

Field	Value
Publication number	US-11101407-B2
Application number	US-201916270252-A
Country	US
Kind code	B2
Filing date	Feb 7, 2019
Priority date	Jul 10, 2008
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

First claim

What is claimed is:

1. A light emitting device comprising:
a polyimide resin;
a first insulating layer over the polyimide resin;
a transistor over the first insulating layer;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening;
a third insulating layer over the wiring, the third insulating layer comprising a second opening;
a first electrode over the third insulating layer, the first electrode electrically connected to the wiring through the second opening;
an EL layer over the first electrode;
a second electrode over the EL layer; and
a fourth insulating layer over the second electrode,
wherein the fourth insulating layer and the second insulating layer are in contact with each other.

2. The light emitting device according to claim 1 , further comprising a polyimide resin over the fourth insulating layer.

3. The light emitting device according to claim 1 , wherein the polyimide resin is impregnated with an organic resin, and
wherein the organic resin is between the polyimide resin and the first insulating layer.

4. The light emitting device according to claim 1 , further comprising a first layer, wherein the polyimide resin is positioned over the first layer.

5. The light emitting device according to claim 4 , wherein the first layer is an impact relief layer.

6. The light emitting device according to claim 1 , wherein the first insulating layer and the second insulating layer are in contact with each other.

7. A light emitting device comprising:
a polyimide resin;
a first insulating layer over the polyimide resin;
a transistor over the first insulating layer;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening;
a third insulating layer comprising silicon nitride over the wiring, the third insulating layer comprising a second opening;
a first electrode over the third insulating layer, the first electrode electrically connected to the wiring through the second opening;
an EL layer over the first electrode;
a second electrode over the EL layer; and
a fourth insulating layer over the second electrode,
wherein the fourth insulating layer and the first insulating layer are in contact with each other.

8. The light emitting device according to claim 7 , further comprising a polyimide resin over the fourth insulating layer.

9. The light emitting device according to claim 7 , wherein the polyimide resin is impregnated with an organic resin, and
wherein the organic resin is between the polyimide resin and the first insulating layer.

10. The light emitting device according to claim 7 , further comprising a first layer, wherein the polyimide resin is positioned over the first layer.

11. The light emitting device according to claim 10 , wherein the first layer is an impact relief layer.

12. The light emitting device according to claim 7 , wherein the first insulating layer and the second insulating layer are in contact with each other.

Assignees

• Semiconductor Energy Lab

Inventors

• Oikawa Yoshiaki
• Eguchi Shingo
• Mashiyama Mitsuo
• Kataniwa Masatoshi
• Shoji Hironobu
• Nakada Masataka
• Seo Satoshi

Classifications

• H05B33/04

  Sealing arrangements {, e.g. against humidity} · CPC title

• H10K59/873

  Encapsulations · CPC title

• H10K59/871 Primary

  Self-supporting sealing arrangements · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10K71/80 Primary

  using temporary substrates · CPC title