Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

Patent metadata

Field	Value
Publication number	US-11101164-B2
Application number	US-202016820003-A
Country	US
Kind code	B2
Filing date	Mar 16, 2020
Priority date	Dec 14, 2016
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

First claim

What is claimed is:

1. A substrate processing system, comprising:
a first chamber including a substrate support;
a showerhead arranged above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber,
wherein the showerhead includes:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum configured to control a temperature of the showerhead and including:
a first plenum formed in the first surface of the middle layer and configured to receive heat transfer fluid from a heat transfer fluid inlet;
a second plenum formed in the second surface of the middle layer and configured to output heat transfer fluid to a heat transfer fluid outlet; and
flow channels that are formed in the first surface of the middle layer, that include inlets, respectively, that include outlets, respectively, and that fluidly connected the inlets with the outlets, respectively;
vias that extend through the middle layer from the first surface to the second surface and that fluidly connect the outlets, respectively, with the second plenum;

a secondary gas plenum including a secondary gas inlet to receive secondary gas and secondary gas injectors to inject the secondary gas into the first chamber; and
through holes passing through the top, middle, and bottom layers,
wherein the through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

2. The substrate processing system of claim 1 wherein the flow channels each include non-straight segments.

3. The substrate processing system of claim 1 wherein the flow channels each include both straight segments and non-straight segments.

4. The substrate processing system of claim 1 wherein the outlets of the flow channels are located between adjacent ones of the inlets of the flow channels.

5. The substrate processing system of claim 1 , wherein the flow channels extend away from the inlets, respectively, turn, and return to the outlets, respectively.

6. The substrate processing system of claim 1 , wherein the first plenum is arcuate shaped.

7. The substrate processing system of claim 1 , wherein the second plenum is arcuate.

8. The substrate processing system of claim 1 , wherein the heat transfer plenum further includes the heat transfer fluid inlet, and
wherein the heat transfer fluid inlet is formed in the first surface of the middle layer.

9. The substrate processing system of claim 1 , wherein the heat transfer plenum further includes the heat transfer fluid outlet, and
wherein the heat transfer fluid outlet is formed in the second surface of the middle layer.

10. The substrate processing system of claim 1 , wherein the secondary gas plenum includes;
a first gas plenum;
a second gas plenum; and
a flow restriction arranged between the first gas plenum and the second gas plenum.

11. The substrate processing system of claim 10 , wherein the flow restriction comprises:
a first walls; and
a slots defined between the first walls.

12. The substrate processing system of claim 11 , wherein the first walls form an arcuate-shape.

13. The substrate processing system of claim 11 , further comprising second walls arranged around the through holes in the second gas plenum.

14. The substrate processing system of claim 13 , wherein the second walls form a cylinder-shape.

15. The substrate processing system of claim 10 , wherein the secondary gas injectors are in fluid communication with the second gas plenum.

16. The substrate processing system of claim 15 , further comprising restrictions arranged between the second gas plenum and the secondary gas injectors.

17. The substrate processing system of claim 1 , further comprising:
a second chamber arranged above the first chamber, wherein the showerhead is arranged between the first chamber and the second chamber;
a coil arranged around the second chamber; and
an RF generator connected to the coil to generate plasma in the second chamber.

18. The substrate processing system of claim 1 , wherein the heat transfer fluid comprises liquid.

19. The substrate processing system of claim 1 , wherein the heat transfer fluid comprises gas.

20. The substrate processing system of claim 1 , wherein the heat transfer fluid does not flow into the first chamber.

21. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends from a bottom surface thereof and that is located radially outside of the through holes and the secondary gas injectors.

22. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends upwardly from a top surface thereof and that is located radially outside of the through holes and the secondary gas injectors.

23. The substrate processing system of claim 1 , further comprising a first O-ring arranged between a top surface of the showerhead and a second chamber and a second O-ring arranged between a bottom surface of the showerhead and the first chamber.

24. A showerhead for a substrate processing chamber, the showerhead comprising:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum including:
a first plenum formed in the first surface of the middle layer and configured to receive heat transfer fluid from a heat transfer fluid inlet;
a second plenum formed in the second surface of the middle layer and configured to output heat transfer fluid to a heat transfer fluid outlet; and
flow channels that are formed in the first surface of the middle layer, that include inlets, respectively, that include outlets, respectively, and that fluidly connected the inlets with the outlets, respectively;
vias that extend through the middle layer from the first surface to the second surface and that fluidly connect the outlets, respectively, with the second plenum;

a secondary gas plenum including a secondary gas inlet to receive secondary gas and secondary gas injectors to inject the secondary gas; and
through holes passing through the top, middle, and bottom layers,
wherein the through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Assignees

• Lam Res Corp

Inventors

• Batzer Rachel
• Qiu Huatan
• Varadarajan Bhadri
• Breiling Patrick Girard
• Gong Bo
• Schlosser Will
• Gui Zhe
• Tan Taide
• Hohn Geoffrey

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title