Showerhead for film depositing vacuum equipment
US-9315897-B2 · Apr 19, 2016 · US
US9476121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9476121-B2 |
| Application number | US-201414489730-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2014 |
| Priority date | Sep 16, 2006 |
| Publication date | Oct 25, 2016 |
| Grant date | Oct 25, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A showerhead for chemical vapor deposition includes: a plurality of reactive gas showerhead modules separated each other and having the same number as the number of kinds of reactive gases injected from the showerhead, each having a mixing zone in the reactive gas showerhead module to induce a mixing of a reactive gas and an injection support gas used to regulate the injection velocity of the reactive gas and a plurality of reactive gas injection tubes connected to the bottom surface of the reactive gas showerhead module for injecting the reactive gas mixed with the injection support gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, with a purge gas supply port for supplying a purge gas to the purge gas showerhead module.
Opening claim text (preview).
What is claimed is: 1. An apparatus for chemical vapor deposition (CVD) with a showerhead through which a reactive gas of at least one kind and a purge gas are injected over a substrate located in a reaction chamber to deposit a film on the substrate, the showerhead comprising: a plurality of reactive gas showerhead modules separated each other and having the same number as the number of kinds of reactive gases injected from the showerhead, each having a mixing zone in the reactive gas showerhead module to induce a mixing of a reactive gas and an injection support gas used to regulate the injection velocity of the reactive gas and a plurality of reactive gas injection tubes connected to the bottom surface of the reactive gas showerhead module for injecting the reactive gas mixed with the injection support gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, having a purge gas supply port for supplying a purge gas to the purge gas showerhead module, an inner space separated from the inner spaces of the reactive gas showerhead modules and for being filled with the purge gas only, and a plurality of purge gas exits at the bottom surface of the purge gas showerhead module for injecting the purge gas over the substrate, wherein each of the reactive gas injection tubes connected to the upper reactive gas showerhead module passes through the lower reactive gas showerhead module along the inside of a guide tube provided in the lower reactive gas showerhead module and the reactive gas injection tube connected to the upper or lower reactive gas showerhead module passes through the purge gas showerhead module. 2. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , wherein the reactive gas showerhead modules each further comprises: a diffusion room where the reactive gas is delivered via a reactive gas supply port thereof and is uniformly spread; a mixing room where the injection support gas is delivered via an injection support gas supply port thereof and is mixed with the reactive gas delivered from the diffusion room; and a distribution room where the mixture of the reactive gas and the injection support gas is distributed to said reactive gas injection tubes, wherein the diffusion room and the mixing room is connected via a border member having a plurality of holes, the mixing room and the distribution room is connected via another border member having a plurality of holes. 3. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , wherein the reactive gas showerhead modules each further comprises: a reactive gas diffusion room where the reactive gas is delivered via a reactive gas supply port thereof and is uniformly spread; an injection support gas diffusion room connected to the reactive gas diffusion room via a border member which becomes a ceiling thereof and has a plurality of holes, where the injection support gas is delivered via an injection support gas supply port thereof and is uniformly spread; a mixing room connected to the injection support gas diffusion room via a border member which becomes the bottom of the injection support gas diffusion room, where the reactive gas injection tubes are joined hermetically to the bottom thereof; and a plurality of reactive gas diffusion channels, with 0.5 to 1.5 mm in inner diameter, of which ends are hermetically joined to the ceiling and bottom of the said injection support gas diffusion room, wherein the reactive gas is delivered to the mixing room after passing through the injection support gas diffusion room along the said reactive gas diffusion channels, the injection support gas is delivered to the mixing room through a plurality of holes, with 0.3 to 0.6 mm in diameter, perforated at the bottom of the injection support gas diffusion room, and the reactive gas mixed with the injection support gas in the mixing room is distributed to said reactive gas injection tubes. 4. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , wherein the reactive gas showerhead modules each further comprises: a reactive gas distribution room where the reactive gas is delivered via a reactive gas supply port thereof and distributed to a plurality of inner reactive gas injection tubes joined at the bottom thereof after being diffused while flowing through a plurality of holes at a mid-plane thereof; and an injection support gas distribution room where the injection support gas is delivered via an injection support gas supply port thereof and distributed to a plurality of outer reactive gas injection tubes joined at the bottom thereof after being diffused while flowing through a plurality of holes at a mid-plane thereof, wherein said inner reactive gas injection tube is shorter than said outer reactive gas injection tube by 5 to 10 mm at its end, said inner reactive gas injection tube is surrounded by said outer reactive gas injection tube, said inner reactive gas injection tube and said outer reactive gas injection tube constitute said reactive gas injection tube as a pair, and a mixing of the reactive gas delivered through said inner reactive gas injection tube and the injection support gas delivered through a gap between the inner wall of the outer reactive gas injection tube and the outer wall of the inner reactive gas injection tube occurs at a space between the ends of said inner and outer reactive gas injection tubes. 5. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , further comprising a cooling jacket for cooling the showerhead, the cooling jacket mounted below the said purge gas showerhead module. 6. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , wherein the reactive gas injection tubes are arranged in rows and columns. 7. An apparatus for chemical vapor deposition (CVD) with a showerhead as recited in claim 1 , wherein the reactive gas injection tubes have an arrangement that the reactive gas injection tubes are located along concentric circles.
for drying etching · CPC title
Shower nozzles · CPC title
Elongated nozzles, tubes with holes · CPC title
Nozzles for more than one gas · CPC title
Oxides · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.