Detection panel and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11056605-B2
Application number	US-201916570437-A
Country	US
Kind code	B2
Filing date	Sep 13, 2019
Priority date	Oct 31, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

A detection panel and a manufacturing method of the same are provided. The detection panel includes: a photosensitive element configured to sense a first light beam incident to the photosensitive element to generate a photosensitive signal; a drive circuit configured to be coupled to the photosensitive element to acquire the photosensitive signal from the photosensitive element, the drive circuit including a switch element; and a reflective grating which is on a side of the drive circuit where the first light beam is incident, and is configured to reflect at least a portion of the first light beam incident toward the switch element.

First claim

What is claimed is:

1. A detection panel, comprising:
a photosensitive element, configured to sense a first light beam incident to the photosensitive element to generate a photosensitive signal;
a drive circuit, configured to be coupled to the photosensitive element to acquire the photosensitive signal from the photosensitive element, wherein the drive circuit comprises a switch element;
a reflective grating, which is on a side of the drive circuit where the first light beam is incident, and is configured to reflect at least a portion of the first light beam incident toward the switch element; and
a light conversion layer,
wherein the first light beam has a first wavelength, and the light conversion layer is configured to convert a second light beam which is incident on the light conversion layer into the first light beam, and the second light beam has a second wavelength smaller than the first wavelength.

2. The detection panel of claim 1 , wherein the switch element comprises a thin film transistor.

3. The detection panel of claim 2 , further comprising a base substrate, wherein the photosensitive element, the drive circuit and the reflective grating are on the base substrate;
an orthographic projection of the reflective grating on the base substrate covers an orthographic projection of a channel region of the thin film transistor on the base substrate.

4. The detection panel of claim 1 , wherein a material of the reflective grating is a metal material.

5. The detection panel of claim 1 , further comprising a transmission grating, wherein the transmission grating is on a side of the photosensitive element where the first light beam is incident and is configured to transmit at least a portion of the first light beam incident toward the photosensitive element.

6. The detection panel of claim 5 , further comprising a base substrate, wherein the photosensitive element, the drive circuit, the reflective grating and the transmission grating are on the base substrate, and an orthographic projection of the transmission grating on the base substrate covers an orthographic projection of the photosensitive element on the base substrate.

7. The detection panel of claim 5 , further comprising a bias voltage line, wherein the bias voltage line is electrically connected with the photosensitive element to provide a bias voltage signal; the bias voltage line, the reflective grating and the transmission grating are in a same layer and are made of a same material.

8. The detection panel of claim 5 , wherein the transmission grating comprises a sub-wavelength anti-reflective grating.

9. The detection panel of claim 8 , wherein the sub-wavelength anti-reflective grating has a thickness ranging from 80 nm to 150 nm.

10. The detection panel of claim 8 , wherein the sub-wavelength anti-reflective grating has a duty ratio ranging from 0.15 to 0.5.

11. The detection panel of claim 1 , wherein the reflective grating is on a side of the photosensitive element close to the drive circuit.

12. The detection panel of claim 1 , wherein the reflective grating comprises a sub-wavelength reflective grating.

13. The detection panel of claim 12 , wherein the sub-wavelength reflective grating comprises a base and grating ridges on the base, and the base has a refractive index lower than a refractive index of the grating ridges.

14. The detection panel of claim 13 , wherein a material of the base is indium phosphide (InP) and a material of the grating ridges is indium gallium arsenide phosphide (InGaAsP).

15. The detection panel of claim 12 , wherein the sub-wavelength reflective grating has a period ranging from 0.1 μm to 0.5 μm and has a duty ratio ranging from 0.6 to 0.8.

16. A detection panel, comprising:
a photosensitive element, configured to sense a first light beam incident to the photosensitive element to generate a photosensitive signal;
a drive circuit, configured to be coupled to the photosensitive element to acquire the photosensitive signal from the photosensitive element, wherein the drive circuit comprises a switch element;
a reflective grating, which is on a side of the drive circuit where the first light beam is incident, and is configured to reflect at least a portion of the first light beam incident toward the switch element; and
a transmission grating, which is on a side of the photosensitive element where the first light beam is incident and is configured to transmit at least a portion of the first light beam incident toward the photosensitive element,
wherein the reflective grating and the transmission grating are in a same layer and are made of a same material.

17. A manufacturing method of a detection panel, comprising:
forming a photosensitive element, wherein the photosensitive element is configured to sense a first light beam incident to the photosensitive element to generate a photosensitive signal;
forming a drive circuit, comprising forming a switch element, wherein the drive circuit is configured to be coupled to the photosensitive element to acquire the photosensitive signal from the photosensitive element;
forming a reflective grating, wherein the reflective grating is on a side of the drive circuit where the first light beam is incident, and is configured to reflect at least a portion of the first light beam incident toward the switch element; and
forming a light conversion layer, wherein the first light beam has a first wavelength, and the light conversion layer is configured to convert a second light beam which is incident on the light conversion layer into the first light beam, and the second light beam has a second wavelength smaller than the first wavelength.

18. The manufacturing method of claim 17 , further comprising forming a transmission grating on a side of the photosensitive element where the first light beam is incident,
wherein the transmission grating is configured to transmit at least a portion of the first light beam incident toward the photosensitive element, and the reflective grating and the transmission grating are formed in a same layer in a same patterning process.

19. The manufacturing method of claim 18 , further comprising forming a bias voltage line electrically connected with the photosensitive element to provide a bias voltage signal,
wherein the reflective grating, the transmission grating and the bias voltage line are formed in the same layer in the same patterning process.

Assignees

• Fuzhou Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Cheng Hao
• Chi Yanfei
• Qiu Xinmao
• Zhuang Zihua
• Wang Jin
• Shi Changhong
• Zhou Min
• Lv Yaochao
• Liu Yao
• Chen Xi

Classifications

• H10F39/016

  of thin-film-based image sensors · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F39/1898 Primary

  Indirect radiation image sensors, e.g. using luminescent members · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/024

  of coatings or optical elements · CPC title