System and method to extend near infrared spectral response for imaging systems

Patent metadata

Field	Value
Publication number	US-9698191-B2
Application number	US-201514832290-A
Country	US
Kind code	B2
Filing date	Aug 21, 2015
Priority date	Aug 21, 2015
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

One innovation includes an IR sensor having an array of sensor pixels to convert light into current, each sensor pixel of the array including a photodetector region, a lens configured to focus light into the photodetector region, the lens adjacent to the photodetector region so light propagates through the lens and into the photodetector region, and a substrate disposed with photodetector region between the substrate and the lens, the substrate having one or more transistors formed therein. The sensor also includes reflective structures positioned between at least a portion of the substrate and at least a portion of the photodetector region and such that at least a portion of the photodetector region is between the one or more reflective structures and the lens, the one or more reflective structures configured to reflect the light that has passed through at least a portion of the photodetector region into the photodetector region.

First claim

What is claimed is:

1. An IR sensor apparatus for capturing an image, comprising:
an array of sensor pixels configured to convert light into current, each sensor pixel of the array of sensor pixels comprising:
a photodetector region configured to convert the light into current;
a lens configured to focus light, that is incident on the lens, into the photodetector region, the lens positioned adjacent to the photodetector region such that incident light propagates through the lens and into the photodetector region;
a substrate disposed such that the photodetector region is between the substrate and the lens, the substrate having one or more transistors formed therein; and
one or more reflective structures positioned within the photodetector region such that at least a portion of the photodetector region is between the one or more reflective structures and the lens, the one or more reflective structures configured to reflect the light that has passed through at least the portion of the photodetector region within the photodetector region.

2. The apparatus of claim 1 , wherein the one or more reflective structures comprises an array of reflective structures disposed within the photodetector region of the sensor pixel.

3. The apparatus of claim 2 , wherein the array of reflective structures comprises a grating having a plurality of surfaces that reflect the light.

4. The apparatus of claim 3 , wherein the array of reflective structures comprises a plurality of structures each having a length that extends across the photodetector region of the sensor pixel, the array of reflective structures further comprising gaps disposed between adjacent structures.

5. The apparatus of claim 3 , wherein the array of reflective structures comprises structures arranged in a bi-periodic two-dimensional array.

6. The apparatus of claim 3 , wherein the array of reflective structures comprises structures arranged in a periodic two-dimensional array.

7. The apparatus of claim 3 , wherein the array of reflective structures is positioned along an edge of the photodetector region adjacent to the substrate.

8. The apparatus of claim 3 , wherein each sensor pixel of the array of sensor pixels further comprises an anti-reflective layer disposed between the lens and the photodetector region.

9. The apparatus of claim 1 , wherein the one or more reflective structures comprise a reflector disposed within the photodetector region of each sensor pixel and having a surface aligned to reflect the light propagating through the photodetector region back into the photodetector region.

10. The apparatus of claim 1 , further comprising a refractive layer configured to refract the light propagating through at least the portion of the photodetector region back through the photodetector region via a refractive film, the refractive film having a higher refractive index than the substrate.

11. A method for capturing an image with an IR sensor having an array of sensor pixels, comprising:
focusing light, via a lens, onto a photodetector region of a pixel of the array of sensor pixels;
converting the light into current via the photodetector region; and
reflecting the light propagating through at least a portion of the photodetector region into the photodetector region via one or more reflective structures positioned within the photodetector region of the pixel, wherein reflecting the light into the photodetector region increases a distance which the light travels within the photodetector region.

12. The method of claim 11 , wherein the one or more reflective structures comprises an array of reflective structures disposed within the photodetector region of the pixel.

13. The method of claim 12 , wherein the array of reflective structures comprises a grating having a plurality of surfaces that reflect light.

14. The method of claim 13 , wherein the array of reflective structures comprises a plurality of structures each having a length that extends across the photodetector region of the sensor pixel, the array of reflective structures further comprising gaps disposed between adjacent structures.

15. The method of claim 13 , wherein the array of reflective structures comprises structures arranged in a bi-periodic two-dimensional array.

16. The method of claim 13 , wherein the array of reflective structures comprises structures arranged in a periodic two-dimensional array.

17. The method of claim 13 , wherein the array of reflective structures is positioned along an edge of the photodetector region adjacent to a substrate of the pixel, the substrate disposed such that the photodetector region is between the substrate and the lens.

18. The method of claim 13 , further comprising preventing light from the photodetector region to the lens via an anti-reflective layer disposed between the lens and the photodetector region.

19. The method of claim 11 , wherein the one or more reflective structures comprise a reflector disposed within a photodetector of the pixel, the reflector disposed such that the photodetector region is between the substrate and the lens, and having a surface aligned to reflect light propagating through the photodetector region back into the photodetector region.

20. The method of claim 11 , further comprising refracting the light propagating through at least the portion of the photodetector region back through the photodetector region via a refractive layer having a higher refractive index than a refractive index substrate of the pixel, the substrate disposed such that the photodetector region is between the substrate and the lens.

21. A method for manufacturing sensor pixel of an IR sensor for capturing an image, the IR sensor including an array of the sensor pixels, the method comprising:
forming a photodetector region configured to convert light into current;
forming a lens configured to focus the light that is incident on the lens onto the photodetector region, the lens positioned adjacent to the photodetector region such that the incident light propagates through the lens and into the photodetector region;
forming a substrate disposed such that the photodetector region is between the substrate and the lens, the substrate having one or more transistors formed therein; and
forming one or more reflective structures positioned within the photodetector region such that at least a portion of the photodetector region is between the one or more reflective structures and the lens, the one or more reflective structures configured to reflect the light that has passed through at least the portion of the photodetector region within the photodetector region.

22. The method of claim 21 , wherein the one or more reflective structures comprises an array of reflective structures formed within the photodetector region of the sensor pixel.

23. The method of claim 22 , wherein the array of reflective structures comprises a grating having a plurality of surfaces that reflect light.

24. The method of claim 23 , wherein the array of reflective structures are formed to comprise a plurality of structures each having a length that extends across the photodetector region and having gaps disposed between adjacent structures.

25. The method of claim 23 , wherein the array of reflective structures is formed to comprise structures arranged in a bi-periodic two-dimensional array.

26. The method of claim 23 , wherein the array of reflective structures is formed t

Assignees

• Qualcomm Inc

Inventors

• Hseih Biay-Cheng
• Goma Sergiu Radu

Classifications

• H01L27/14685

  Electricity · mapped topic

• H01L27/14649 Primary

  Electricity · mapped topic

• H01L27/14629

  Electricity · mapped topic

• H01L27/14627

  Electricity · mapped topic

• H10F39/024

  of coatings or optical elements · CPC title