Photoelectric conversion device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9876125-B2
Application number	US-201414913443-A
Country	US
Kind code	B2
Filing date	Jul 11, 2014
Priority date	Aug 23, 2013
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the half-width of a spectral waveform and a method for manufacturing such a photoelectric conversion device are provided. A first photoelectric conversion element is formed on a substrate. A first metal film having a plurality of openings arranged periodically or aperiodically is formed above the first photoelectric conversion element with insulating films interposed therebetween. A second metal film covering a part of the openings in the first metal film is provided.

First claim

The invention claimed is:

1. A photoelectric conversion device comprising:
a first photoelectric element provided on a substrate;
a first metal film for constituting a plasmonic filter region, the first metal film being provided above the first photoelectric conversion element with insulator films interposed therebetween and having a plurality of openings arranged periodically or aperiodically; and
a second metal film covering a part of the plurality of openings in the first metal film,
wherein the second metal film is configured to cover all of the outermost openings positioned in a peripheral part of the plasmonic region among the plurality of openings in the first metal film and to block light transmitted through all of the outermost openings; and
the first and second metal films are spaced apart.

2. The photoelectric conversion device according to claim 1 , further comprising a second photoelectric conversion element provided on the substrate,
wherein the first metal film is provided above the first and second photoelectric conversion elements with the insulator films interposed therebetween, and
the second metal film covers a part of the plurality of openings in the first metal film above the first photoelectric conversion element and a part of the plurality of openings in the first metal film above the second photoelectric conversion element and covers a region between the first photoelectric conversion element and the second photoelectric conversion element.

3. The photoelectric conversion device according to claim 1 , wherein the plurality of openings in the first metal film are slits.

4. The photoelectric conversion device according to claim 1 , wherein at least a part of the first metal film constituting the plasmonic filter region is grounded.

5. A photoelectric conversion device comprising:
a first photoelectric element provided on a substrate;
a first metal film constituting a plasmonic region, the first metal film being provided above the first photoelectric conversion element with insulator films interposed therebetween and having a plurality of openings arranged periodically or aperiodically; and
a second metal film covering a part of the plurality of openings n the first metal film,
wherein the second metal film is configured to cover at least all of outermost openings among the plurality of openings in the first metal film and to block light transmitted through all of the outermost openings;
a circuit section provided on the substrate; and
a multilayer wire composed of a plurality of wiring layers formed with the insulator films interposed therebetween, respectively,
wherein the first metal film is provided above the multilayer wire, and
the second metal film also serves as one wiring layer of the plurality of wiring layers of the multilayer wire.

6. A method for manufacturing a photoelectric conversion device, comprising:
forming a photoelectric conversion element on a substrate;
forming a plurality of wiring layers in sequence above the substrate with insulator films interposed therebetween, respectively, so that the uppermost wiring layer among the plurality of wiring layers also serves as a second metal film; and
forming a first metal film above the first photoelectric conversion element with insulator films interposed therebetween, the first metal film being for constituting a plasmonic filter region and having a plurality of openings arranged periodically or aperiodically, and covering at least all of the outermost openings among the plurality of openings in the first metal film with the second metal film.

Assignees

• Sharp Kk

Inventors

• Natsuaki Kazuhiro
• Uchida Masayo
• Takimoto Takahiro
• Awaya Nobuyoshi
• Ishihara Kazuya
• Nakano Takashi
• Nakura Mitsuru

Classifications

• H01L27/14645

  Electricity · mapped topic

• H01L31/02164

  Electricity · mapped topic

• H01L27/14625

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic

• H01L31/02162 Primary

  Electricity · mapped topic